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Rochester Electronics LLC MTD6N20E1 N-CHANNEL POWER MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MTD6N20E1	Bulk			2,418	1 - 10 - 100 - 1000 - 10000 $0.14	Buy Now
onsemi MTD6N20ET4 MOSFET N-CH 200V 6A DPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MTD6N20ET4	Digi-Reel			1	1 $1.5 10 $1.5 100 $1.5 1000 $1.5 10000 $1.5	Buy Now
	MTD6N20ET4	Cut Tape				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Bristol Electronics	MTD6N20ET4		1,020			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Chip 1 Exchange	MTD6N20ET4		2,535			1 - 10 - 100 - 1000 - 10000 -	Get Quote
onsemi MTD6N20ET4G MOSFET N-CH 200V 6A DPAK
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DigiKey	MTD6N20ET4G	Cut Tape				1 - 10 - 100 - 1000 - 10000 -	Buy Now
	MTD6N20ET4G	Digi-Reel			1	1 $1.01 10 $1.01 100 $1.01 1000 $1.01 10000 $1.01	Buy Now
	MTD6N20ET4G	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Newark	MTD6N20ET4G	Cut Tape			2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Bristol Electronics	MTD6N20ET4G		200			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Win Source Electronics	MTD6N20ET4G		3,005			1 - 10 - 100 $1.3198 1000 $1.0723 10000 $1.0723	Buy Now
onsemi MTD6N20ET5G MOSFET N-CH 200V 6A DPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MTD6N20ET5G	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
OMRON Industrial Automation E2Q6-N20E3-H SENSOR PROX INDUCT 20MM IP67 MOD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	E2Q6-N20E3-H	Bulk			1	1 $302.94 10 $302.94 100 $302.94 1000 $302.94 10000 $302.94	Buy Now
Newark	E2Q6-N20E3-H	Bulk			1	1 $366.8 10 $330.12 100 $301.16 1000 $301.16 10000 $301.16	Buy Now

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6N20E Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
n20eg Abstract: 6N20E 369D AN569 MTD6N20E 6n20eg Text: 6N20E Power MOSFET 6 A, 200 V, N−Channel DPAK This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low voltage, high speed switching	Original	PDF	MTD6N20E MTD6N20E/D n20eg 6N20E 369D AN569 MTD6N20E 6n20eg
E3P102 Abstract: T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl Text: DL135/D Rev. 7, Apr-2001 Power MOSFETs Power MOSFETs DL135/D Rev. 7, Apr–2001  SCILLC, 2001 Previous Edition  1996 “All Rights Reserved” EZFET, MiniMOS & SMARTDISCRETES are trademarks of Semiconductor Components Industries, LLC SCILLC . ChipFET is a trademark of Vishay Siliconix.	Original	PDF	DL135/D Apr-2001 r14525 DLD601 E3P102 T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl
AN569 Abstract: MTD6N20E MTD6N20E1 MTD6N20ET4 6n20e Text: 6N20E Preferred Device Power MOSFET 6 Amps, 200 Volts N–Channel DPAK This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast	Original	PDF	MTD6N20E r14525 MTD6N20E/D AN569 MTD6N20E MTD6N20E1 MTD6N20ET4 6n20e
n20eg Abstract: 6n20e N20E V750C on semiconductor marking n20e 369D AN569 MTD6N20E MTD6N20E1 MTD6N20ET4 Text: 6N20E Preferred Device Power MOSFET 6 Amps, 200 Volts N−Channel DPAK This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain−to−source diode with a fast	Original	PDF	MTD6N20E MTD6N20E/D n20eg 6n20e N20E V750C on semiconductor marking n20e 369D AN569 MTD6N20E MTD6N20E1 MTD6N20ET4
N20E Abstract: on semiconductor marking n20e 369D AN569 MTD6N20E MTD6N20E1 MTD6N20ET4 6n20e Text: 6N20E Preferred Device Power MOSFET 6 Amps, 200 Volts N-Channel DPAK This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast	Original	PDF	MTD6N20E MTD6N20E/D N20E on semiconductor marking n20e 369D AN569 MTD6N20E MTD6N20E1 MTD6N20ET4 6n20e
Untitled Abstract: No abstract text available Text: 6N20E Power MOSFET 6 A, 200 V, N−Channel DPAK This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low voltage, high speed switching	Original	PDF	MTD6N20E MTD6N20E/D
Untitled Abstract: No abstract text available Text: 6N20E Power MOSFET 6 A, 200 V, N−Channel DPAK This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low voltage, high speed switching	Original	PDF	MTD6N20E MTD6N20E/D
6n20e Abstract: mosfet 4532 4532 MOSFET Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet TMOS E-FET ™ Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate This advanced TM OS E -F E T is designed to w ithstand high energy in the avalanche and commutation modes. The new energy	OCR Scan	PDF

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6N20E Price and Stock

Rochester Electronics LLC MTD6N20E1

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OMRON Industrial Automation E2Q6-N20E3-H

6N20E Datasheets Context Search

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