MX29GL512FHMI-11G
Abstract: MX29GL512FHMI-10Q
Text: MX29GL512F H/L-70SSOP MX29GL512F H/L 70 SSOP DATASHEET P/N:PM1673 REV. 1.2, JAN. 06, 2012 1 MX29GL512F H/L-70SSOP SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • 2.7 to 3.6 volt for read, erase, and program operations • Byte/Word mode switchable
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MX29GL512F
H/L-70SSOP
PM1673
64KW/128KB
16-byte/8-word
64-byte/32-word
128-word
MX29GL512FHMI-11G
MX29GL512FHMI-10Q
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A910
Abstract: mx68gl1g0 MX68GL1G0FHMI-11G
Text: MX68GL1G0F H/L-70SSOP MX68GL1G0F H/L 70SSOP DATASHEET P/N:PM1750 REV. 0.00, AUG. 23, 2011 1 MX68GL1G0F H/L-70SSOP Contents 1. FEATURES. 6
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MX68GL1G0F
H/L-70SSOP
70SSOP)
PM1750
A910
mx68gl1g0
MX68GL1G0FHMI-11G
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MX29GL256
Abstract: No abstract text available
Text: MX29GL256F H/L-70SSOP MX29GL256F H/L 70 SSOP DATASHEET P/N:PM1674 REV. 1.2, DEC. 13, 2011 1 MX29GL256F H/L-70SSOP SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations
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MX29GL256F
H/L-70SSOP
PM1674
64KW/128KB
16-byte/8-word
64-byte/32-word
128-word
MX29GL256
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MX29GL128F
Abstract: MX29GL128
Text: MX29GL128F H/L-70SSOP MX29GL128F H/L 70 SSOP DATASHEET P/N:PM1686 REV. 0.01, JUN. 28, 2011 1 MX29GL128F H/L-70SSOP Contents FEATURES. 5
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MX29GL128F
H/L-70SSOP
PM1686
MX29GL128
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Untitled
Abstract: No abstract text available
Text: MX29GL512F MX29GL512F DATASHEET P/N:PM1617 REV. 1.6, OCT. 30, 2013 1 MX29GL512F Contents FEATURES. 5
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MX29GL512F
PM1617
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LH53B16R00
Abstract: No abstract text available
Text: LH53B16R00 CMOS 16M 1M x 16/512K × 32 MROM FEATURES PIN CONNECTIONS • 1,048,576 × 16 bit organization (Word mode: W = VIL) 524,288 × 32 bit organization (Double Word mode: W = VIH) • Access time: 120 ns (MAX.) Access time in page mode: 50 ns (MAX.)
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LH53B16R00
16/512K
70-PIN
D31/A-1
70SSOP
70-pin,
500-mil
SSOP70-P-500)
LH53B16R00N
LH53B16R00
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MR27V25603L
Abstract: 66 pin tsop package
Text: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株
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FEDR27V25603L-02-02
MR27V25603L
216-word
16-bit/33
432-word
MR27V25603L-xxxTM)
MR27V25603L-xxxTME)
MR27V25603L-xxxTM,
MR27V25603L-xxxTME
50-pin
MR27V25603L
66 pin tsop package
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MX29GL512
Abstract: MX29GL512E 00FF0001 29GL512 Q0-Q15 PM1524 mx29gl512e 70 MX29GL512EHMC-10Q MX29GL512EHT2I-10Q MX29GL512ELT2I-10Q
Text: MX29GL512E H/L MX29GL512E H/L DATASHEET P/N:PM1524 REV. 1.1, NOV. 22, 2010 1 MX29GL512E H/L SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • 2.7 to 3.6 volt for read, erase, and program operations • Byte/Word mode switchable - 67,108,864 x 8 / 33,554,432 x 16
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MX29GL512E
PM1524
64KW/128KB
16-byte/8-word
64-byte/32-word
128-word
MX29GL512
00FF0001
29GL512
Q0-Q15
PM1524
mx29gl512e 70
MX29GL512EHMC-10Q
MX29GL512EHT2I-10Q
MX29GL512ELT2I-10Q
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Untitled
Abstract: No abstract text available
Text: KM23V64205ASG CMOS MASK ROM 64M-Bit 4Mx16 /2Mx32 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304 x 16(word mode) 2,097,152 x 32(double word mode) • Fast access time Random Access/Page Access 3.3V Operation : 100/30ns(Max.)
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KM23V64205ASG
64M-Bit
4Mx16
/2Mx32)
100/30ns
120/40ns
70-SSOP-500
KM23V64205ASG
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K3P6C2000B-SC
Abstract: No abstract text available
Text: K3P6C2000B-SC CMOS MASK ROM 32M-Bit 2Mx16 /1Mx32 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 2,097,152 x 16(word mode) 1,048,576 x 32(double word mode) • Fast access time Random Access : 100ns(Max.) Page Access : 30ns(Max.) • 4 double words/ 8 words page access
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K3P6C2000B-SC
32M-Bit
2Mx16
/1Mx32)
100ns
150mA
70-SSOP-500
K3P6C2000B-SC
152x16
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Untitled
Abstract: No abstract text available
Text: KM23V16205DSG CMOS MASK ROM 16M-Bit 1Mx16 /512Kx32 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 16(word mode) 524,288 x 32(double word mode) • Fast access time Random Access : 100ns(Max.) Page Access : 30ns(Max.) 4 double Words / 8 Words page access
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KM23V16205DSG
16M-Bit
1Mx16
/512Kx32)
100ns
70-SSOP-500
KM23V16205DSG
70-SSOP-500)
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Untitled
Abstract: No abstract text available
Text: KM23C16205DSG CMOS MASK ROM 16M-Bit 1Mx16 /512Kx32 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 16(word mode) 524,288 x 32(double word mode) • Fast access time Random Access : 100ns(Max.) Page Access : 30ns(Max.) 4 double Words / 8 Words page access
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KM23C16205DSG
16M-Bit
1Mx16
/512Kx32)
100ns
150mA
70-SSOP-500
KM23C16205DSG
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Untitled
Abstract: No abstract text available
Text: KM23C32205BSG CMOS MASK ROM 32M-Bit 2Mx16 /1Mx32 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 2,097,152 x 16(word mode) 1,048,576 x 32(double word mode) • Fast access time Random Access : 100ns(Max.) Page Access : 30ns(Max.) • 4 double words/ 8 words page access
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KM23C32205BSG
32M-Bit
2Mx16
/1Mx32)
100ns
150mA
70-SSOP-500
KM23C32205BSG
152x16
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Untitled
Abstract: No abstract text available
Text: PEDR26V51253L-02-04 OKI Semiconductor MR26V51253L 32M–Word x 16–Bit or 64M–Word × 8–Bit Page Mode Issue Date: Jun. 8, 2004 Preliminary P2ROM FEATURES • 33,554,432-word × 16-bit / 67,108,864-word × 8-bit electrically switchable configuration · Page size of 8-word x 16-Bit or 16-word x 8-Bit
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MR26V51253L
PEDR26V51253L-02-04
432-word
16-bit
864-word
16-word
MR26V51253L-xxxMB
70-pin
P-SSOP70-500-0
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Untitled
Abstract: No abstract text available
Text: OKI Semiconductor MR26V51253L 32M–Word x 16–Bit or 64M–Word × 8–Bit Page Mode PEDR26V51253L-02-06 Issue Date: Sep. 8, 2004 Preliminary P2ROM FEATURES • · · · · · · · · 33,554,432-word × 16-bit / 67,108,864-word × 8-bit electrically switchable configuration
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MR26V51253L
PEDR26V51253L-02-06
432-word
16-bit
864-word
16-word
MR26V51253L-xxxMB
70-pin
P-SSOP70-500-0
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S29GL512P
Abstract: MX29GL512E S29GL512N mx29gl S29GL MX29GL512 Spansion S29GL512P Macronix s29gl512 S29GL512N datasheet
Text: APPLICATION NOTE Migrating to the Macronix MX29GL512E from Spansion S29GL512P N Memory Devices Contents Introduction. 2
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MX29GL512E
S29GL512P
S29GL512N
mx29gl
S29GL
MX29GL512
Spansion S29GL512P
Macronix
s29gl512
S29GL512N datasheet
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Untitled
Abstract: No abstract text available
Text: PEDR27V25653L-02-02 OKI Semiconductor MR27V25653L 16M–Word x 16–Bit or 32M–Word × 8–Bit Page Mode Issue Date: Apr. 9, 2004 Preliminary P2ROM FEATURES • 16,777,216-word × 16-bit / 33,554,432-word × 8-bit electrically switchable configuration · Page size of 8-word x 16-Bit or 16-word x 8-Bit
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MR27V25653L
PEDR27V25653L-02-02
216-word
16-bit
432-word
16-word
50TSOP
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MX29GL256FLT2I-90Q
Abstract: MX29GL256FHT MX29GL256 MX29GL256FHT2I-90Q MX29GL256F MX29GL256FL MX29GL256FH 29GL256 MX29GL256FLXFI-90Q PM1544
Text: MX29GL256F MX29GL256F DATASHEET P/N:PM1544 REV. 0.02, OCT. 18, 2010 1 PRELIMINARY MX29GL256F SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations - MX29GL256F H/L: VI/O=VCC=2.7V~3.6V, VI/O voltage must tight with VCC
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MX29GL256F
PM1544
MX29GL256F
64KW/128KB
16-byte/8-word
64-byte/32-word
128-word
100mA
MX29GL256FLT2I-90Q
MX29GL256FHT
MX29GL256
MX29GL256FHT2I-90Q
MX29GL256FL
MX29GL256FH
29GL256
MX29GL256FLXFI-90Q
PM1544
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Z04B
Abstract: MR27V6441L MARK Z04D MR27V6441L-xxxMP Z04D 48TSOP2 ST03
Text: OKI Semiconductor MR27V6441L PEDR27V6441L-02-03 Issue Date: April 4, 2005 Preliminary 64M x 1–Bit Serial Production Programmed ROM P2ROM GENERAL DESCRIPTION The MR27V6441L is a 64 Mbit Production Programmed Read-Only Memory, which is configured as 67,108,864 word × 1-bit. The MR27V6441L supports a simple read operation using a single 3.3V power supply
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MR27V6441L
PEDR27V6441L-02-03
MR27V6441L
33MHz
20MHz
42SOJ
48BGA
28SOP
Z04B
MARK Z04D
MR27V6441L-xxxMP
Z04D
48TSOP2
ST03
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MX29GL256F
Abstract: MX29GL256FHT2I-90Q MX29GL256FLT2I-90Q TSOP 62 Package MX29GL256FLT2i
Text: MX29GL256F MX29GL256F DATASHEET P/N:PM1544 REV. 1.3, JAN. 12, 2012 1 MX29GL256F Contents FEATURES. 5
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MX29GL256F
MX29GL256F
PM1544
MX29GL256FHT2I-90Q
MX29GL256FLT2I-90Q
TSOP 62 Package
MX29GL256FLT2i
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MX29GL256FHT
Abstract: MX29GL256FH
Text: MX29GL256F MX29GL256F DATASHEET ADVANCED INFORMATION MX29GL256F SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations - MX29GL256F H/L: VI/O=VCC=2.7V~3.6V, VI/O voltage must tight with VCC
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MX29GL256F
MX29GL256F
64KW/128KB
16-byte/8-word
64-byte/32-word
128-word
100mA
MX29GL256FHT
MX29GL256FH
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Untitled
Abstract: No abstract text available
Text: FEDR26V51253L-002-02 Issue Date: Oct. 01, 2008 MR26V51253L 32M–Word x 16–Bit or 64M–Word × 8–Bit Page Mode P2ROM FEATURES • · · · · · · · · 33,554,432-word × 16-bit / 67,108,864-word × 8-bit electrically switchable configuration Page size of 8-word x 16-Bit or 16-word x 8-Bit
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FEDR26V51253L-002-02
MR26V51253L
432-word
16-bit
864-word
16-word
MR26V51253L-xxxMB
70-pin
P-SSOP70-500-0
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Z04B
Abstract: MARK Z04D
Text: FEDR27T1641L-02-H1 ＯＫＩ Semiconductor MR27T1641L This version : Feb.28, 2005 Previous version: -.- 8M x 1–Bit Serial Production Programmed ROM P2ROM GENERAL DESCRIPTION The MR27T1641L is a 16 Mbit Production Programmed Read-Only Memory, which is configured as
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FEDR27T1641L-02-H1
MR27T1641L
MR27T1641L
30MHz
20MHz
42SOJ
48BGA
28SOP
Z04B
MARK Z04D
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Untitled
Abstract: No abstract text available
Text: Preliminary CMOS MASK ROM KM23V16205DSG 16M-B»t 1Mx16 /512KX32 CMOS MASK ROM FEATURES G E N E R A L D E S C R IP T IO N • Switchable organization 1,048,576 x 16(word mode) 524,288 x 32(double word mode) • Fast access time Random Access : 100ns(Max.)
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KM23V16205DSG
16M-B
1Mx16
/512KX32)
100ns
70-SSOP-500
KM23V16205DSG
KM23V16205DS6-12
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