optocoupler pnp or npn
Abstract: PROXIMITY inductive ic HYBRID SEMICONDUCTORS metal detectors IC optocoupler pnp OM2860 OM3105N OM3105P OM3115N OM3115P
Text: 711QflEb 0 G 7 n ? l Philips Semiconductors STB » P H I N Preliminary specification Hybrid integrated circuits for inductive 7 . j* . * proximity detectors OM3105P FEATURES DESCRIPTION • Extra small dimensions 3 x 20 mm max. The OM3105P is a hybrid integrated circuit intended for
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711002t
OM3105P
OM2860
OM956/1
OM956/1
optocoupler pnp or npn
PROXIMITY inductive ic
HYBRID SEMICONDUCTORS
metal detectors IC
optocoupler pnp
OM3105N
OM3105P
OM3115N
OM3115P
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600B
Abstract: 800B T0220AB bta212b BTA212-600B
Text: bSE D m 711QflEb □ObEMD'i ^54 • PHIN Philips Product specification ’Hi-Com’ triac GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated 12 A triacs designed to be used in motor
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711Q6Eb
BTA212-B
T0220AB
BTA212-
7110flEb
0Qb2412
T0220AB;
T0220
600B
800B
bta212b
BTA212-600B
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silicon planar epitaxial transistors
Abstract: No abstract text available
Text: BCY70 to 72 PHILIPS IN TERNATIONA L SbE D 711 002 b DOMElOti bTb BIP HIN SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in TO-18 metal envelopes intended fo r general purpose industrial applications. The BCY71 is a low noise version. QUICK REFERENCE D A TA
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BCY70
BCY71
T-27-09
711002b
silicon planar epitaxial transistors
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BUK542
Abstract: BUK542-100A BUK542-100B
Text: PHILIPS INTERNATIONAL bSE ]> • 711QSSb ODbmfll Tbfl ■ PHIN Philips Semiconductors Product Specification PowerMOS transistor BUK542-100A/B Logic level GENERAL DESCRIPTION PINNING -SO T186 PIN SYMBOL
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711QSSb
BUK542-100A/B
-SOT186
BUK542
-100A
-100B
BUK542-100A
BUK542-100B
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specifications tv pattern generator
Abstract: pwm0003 FTH A 001 26 10 IC PRESET TV TUNING KAE V2 QFP48 square tv font PCA84C640 PCA84C846 PCA84C846H
Text: PHILIPS INTERNATIONAL bSE D □ 711002b DObOSai 4T7 « P H I N Philips Objective specification Microcontroller for TV tuning control and OSD application prAaariM fi CONTENTS 1 FEATURES PCA84CXXX KERNEL
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7110flBb
DGbQS31
PCA84C846
PCA84CXXX
14-bit
specifications tv pattern generator
pwm0003
FTH A 001 26 10
IC PRESET TV TUNING
KAE V2
QFP48 square
tv font
PCA84C640
PCA84C846
PCA84C846H
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BUK443
Abstract: BUK443-60A BUK443-60B TRANSISTOR C 557 B
Text: PHILIPS INTERNATIONAL bSE ]> 711002b OObB^l Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies
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711Dfi2b
BUK443-60A/B
OT186
BUK443
BUK443-60A
BUK443-60B
TRANSISTOR C 557 B
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dmo 265 r
Abstract: M7 diode footprint wave soldering PCD3332-X Cassio dmo 265 DIP28 PCD3332-2 PCD3332-2P PCD3332-2T PCD3332-3
Text: Preliminary specification Philips Semiconductors Multistandard pulse/tone repertory diallers/ringers_ PCD3332-X family FEATURES • Ringer tone generator • Pulse and DTMF mixed mode dialling • Ringer-input frequency discriminator • 13 number repertory dial up to 32 digits
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PCD3332-2)
tran60
7110fl2b
dmo 265 r
M7 diode footprint wave soldering
PCD3332-X
Cassio
dmo 265
DIP28
PCD3332-2
PCD3332-2P
PCD3332-2T
PCD3332-3
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80C51
Abstract: 80C54 87C54 8XC54 UN0227
Text: INTEGRATED CIRCUITS 80C34/80C54/87C54 CMOS single-chip 8-bit microcontrollers Preliminary specification 1995 Jun 02 IC20 Data Handbook Philips Semiconductors PHILIPS PHILIPS 711002b a m m n s e & This Material Copyrighted By Its Respective Manufacturer Philips Semiconductors
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80C34/80C54/87C54
711052b
80C34/80C54/87C54
8XC54
sot389-1
711002b
80C51
80C54
87C54
UN0227
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extra bass circuit diagram
Abstract: extra bass circuit LW 2411 GDO2 bass mid treble control circuit bass treble control circuit 6811F ES01 S028 TEA6310T
Text: TEA6310T SOUND FADER CONTROL CIRCUIT GENERAL DESCRIPTION The Sound Fader C o n tro l c irc u it SOFAC is an l 2C-bus co n tro lle d tone and volum e co n tro l circ u it fo r car radios. Features • V olum e and balance c o n tro l; c o n tro l range o f 86 dB in steps o f 2 dB
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TEA6310T
DDfl251D
711005b
7110fi2b
extra bass circuit diagram
extra bass circuit
LW 2411
GDO2
bass mid treble control circuit
bass treble control circuit
6811F
ES01
S028
TEA6310T
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LD18 SOT223
Abstract: transistor wmv 5E SOT223 IJ63 BUK482-100A LD18A
Text: PHILIPS INTERNATIONAL bSE D • 7110a2b 00b41bcl 4bD « P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channei enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications.
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7110flSt.
ODb417D
BUK482-100A
OT223
711002b
0Db4174
OT223.
35\im
LD18 SOT223
transistor wmv
5E SOT223
IJ63
LD18A
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BSN3005L
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification N-channel enhancement mode MOS transistor BSN3005L FEATURES PINNING - SOT23 • High speed switching • No secondary breakdown • Direct interface to C-MOS, TTL etc. PIN SYMBOL 1 2 3 g gate s source d drain
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BSN3005L
7110aeb
011004b
711002b
BSN3005L
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tbf 494
Abstract: TL372
Text: Product specification Philips Semiconductors 10-bit, 500 Msps Digital-to-Analog Converter DAC TDA8776 FEATURES APPLICATIONS • 10-bit resolution High-speed digital-to-analog conversion for: • Conversion rate up to 500 MHz • High resolution video and graphics
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10-bit,
10-bit
10K/100K
TDA8776
TDA8776
711Dfi2b
010M474
tbf 494
TL372
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ICM4712701
Abstract: application of RF robot SFG455A3 rmc npo capacitor ne616 SCB-1320Z TOKO 455KHz ceramic filter 5.5MHz ceramic Filter SA616 NE615
Text: PHILIPS INTERNATIONAL 71iafl2b GD53b7M S4? « P H I N bOE » Product spaclflcatlon Philips Semiconductors RF Communications Products NE/SA616 Low-voltage high performance mixer FM IF system " P -7 4 - U - o DESCRIPTION The NE/SA616 is a low-voltage high performance monolithic FM IF system
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QQ53b7M
NE/SA616
NE/SA616
20-lead
NE616
NE616D
KTDN9/91
ICM4712701
application of RF robot
SFG455A3
rmc npo capacitor
SCB-1320Z
TOKO 455KHz ceramic filter
5.5MHz ceramic Filter
SA616
NE615
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BLV91
Abstract: philips capacitor 021 IEC134 sot172 TRIMMER
Text: bSE D • 711Dû5b 0Qb3G21 715 H P H I N BLV91 PHILIPS INTERNATIONAL U.H.F. POWER TRANSISTOR N-P-N sil icon planar epitaxial transistor designed fo r use in mobile radio transmitters in the 9 0 0 M H z band. Features: • multi-base structure and diffused emitter-ballasting resistors fo r an optim um tem perature profile
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BLV91
OT-172)
OT-172A1.
711005b
G0b3D57
BLV91
philips capacitor 021
IEC134
sot172
TRIMMER
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Mark Y2C SOT
Abstract: philips dl 701 TELETEXT TRANSMITTER digital cvbs pattern CCIR-656 PLCC84 SAA7111 SAA7151B SAA7183 L21010
Text: Philips Semiconductors Preliminary specification Digital video encoder EURO-DENC SAA7183/82 FEATURES • M onolithic CM OS 5V device • D igital PAL/NTSC/SECAM encoder • System Pixel Frequency: 13.5 M Hz • A ccepts M PEG decoded data on 8 bit wide input port (CCIR 656 like as
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SAA7183/82
Mark Y2C SOT
philips dl 701
TELETEXT TRANSMITTER
digital cvbs pattern
CCIR-656
PLCC84
SAA7111
SAA7151B
SAA7183
L21010
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BUK445-100A
Abstract: 100-P BUK445 BUK445-100B
Text: PHILIPS INTERNATIONAL bSE D • TllDflSb □ □ b 3 W Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies
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BUK445-100A/B
-SOT186
BUK445-100A
100-P
BUK445
BUK445-100B
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t122 25 10
Abstract: No abstract text available
Text: SbE D T -01 -17 BY249F SERIES 711üö2ti DGMllSfl 37T « P H I N 5bE cHILIPS i n t e r n a t i o n a l ELECTRICALLY ISOLATED RECTIFIER DIODES Glass-passivated, double-diffused rectifier diodes in full-pack plastic envelopes, intended fo r power rectifier applications. Their electrical isolation makes them ideal fo r m ounting on a common heatsink
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BY249F
BY249F--300
OT-186
711Dfl5b
711DflSb
0Q4113M
T-Ol-17
t122 25 10
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C18 ph zener
Abstract: philips zener diode c24 zener diode c51 ph philips zener diode c18 BZY93 BZY93 series diode zener ph c9v1 R3844 BZY93-C75R DIODE C18 ph
Text: BZY93 SERIES 7 01 - 1 7 - PHILIPS INTERNATIONAL SL.E D 711 □ fig b DQHltiflfl 3ST • P H I N REGULATOR DIODES Also available to BS9305—F051 A range o f diffused silicon diodes in DO-4 metal envelopes, intended fo r use as voltage regulator and transient suppressor diodes in power stabilization and transient suppression circuits.
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BZY93
711QaSb
BS9305-F051
BZY93-C7V5
BZY93-C75.
BZY93-C7V5R
BZY93-C75R.
T-OL-17
C18 ph zener
philips zener diode c24
zener diode c51 ph
philips zener diode c18
BZY93 series
diode zener ph c9v1
R3844
BZY93-C75R
DIODE C18 ph
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PIN DIAGRAM OF 7 segment display LT 542
Abstract: 7 segment display LT 542 s170 TRANSISTOR schematic diagram lcd monitor advance 17 RBL 43 P TRANSISTOR MAB8048 PCF84C430 PCF84C430H S13324
Text: D E V E L O P M E N T DATA P C F8 4 C 4 3 0 This data sheet contains advance inform ation and specifications are subject to change w ith out notice. ;L B U S | PHILIPS INTERNATIONAL 34E D • 711002b 0011535 3 SIN GLE-CH IP 8-BIT M ICRO CO N TRO LLER WITH LC D D RIVER
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PCF84C430
711002b
GG11S3S
84CXXX
PCF84CXX
PIN DIAGRAM OF 7 segment display LT 542
7 segment display LT 542
s170 TRANSISTOR
schematic diagram lcd monitor advance 17
RBL 43 P TRANSISTOR
MAB8048
PCF84C430H
S13324
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SAA 1251
Abstract: saa 1291 SN40 1Ns4 87C652 1251 saa 80C51 MANUAL 80C51 ME 1117 Philips FA 291 AMPLIFIER
Text: Philips Semiconductors Product specification CMOS single-chip 8-bit microcontroller 87C652 DESCRIPTION PIN CONFIGURATION The 87C652 Single-Chip 8-Bit Microcontroller is manufactured in an advanced CMOS process and is a derivative of the 80C51 microcontroller family. The 87C652 has the
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87C652
87C652
80C51
80C51.
16-bit
80C51)
853-0590B
SAA 1251
saa 1291
SN40
1Ns4
1251 saa
80C51 MANUAL
ME 1117
Philips FA 291 AMPLIFIER
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tda70568
Abstract: TDA7056B AUDIO volume CONTROL IC TDA7056B application MSA709 MSA710 TDA7056
Text: Preliminary specification Philips Semiconductors 5 W mono BTL audio amplifier with DC volume control TDA7056B FEATURES GENERAL DESCRIPTION • DC volume control The TDA7056B is a mono Bridge-Tied Load BTL output amplifier with DC volume control. It is designed for use in TV and monitors, but is also
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TDA7056B
TDA7056B
7110flEb
tda70568
AUDIO volume CONTROL IC
TDA7056B application
MSA709
MSA710
TDA7056
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ha 13627
Abstract: P8XC592 TRANSISTOR BSP 149 80C51 P80C592 P80C592FFA P80C592FHA P83C592 P83C592FFA P83C592FHA
Text: Philips Semiconductors Product specification 8-bit microcontroller with on-chip CAN P8xC592 CONTENTS 14 INTERRUPTSYSTEM 1 FEATURES 2 GENERAL DESCRIPTION 14.1 14.2 14.3 Interrupt Enable and Priority Registers Interrupt Vectors Interrupt Priority 3 ORDERING INFORMATION
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P8xC592
01G57S4
ha 13627
P8XC592
TRANSISTOR BSP 149
80C51
P80C592
P80C592FFA
P80C592FHA
P83C592
P83C592FFA
P83C592FHA
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PH BC107
Abstract: PH BC109 bc107 curves 7z08s BC109C D73 -Y BC108C BC107 BG10Z BC108B
Text: BGIQZJd 109 T PHILIPS INTERNATIONAL SbE D • - 2 ^ 711002b G O m ^ M Ô A.F. SILICON PLANAR EPITAXIAL TRANSISTORS / MIS ■ PHIN ^ N-P-N transistors in TO-18 metal envelopes with the collector connected to the case.
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BG10ZÃ
711002b
BC107
BC108
BC109
BC109
Collector-e07
PH BC107
PH BC109
bc107 curves
7z08s
BC109C
D73 -Y
BC108C
BG10Z
BC108B
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74LV165
Abstract: 74LV165D 74LV165DB 74LV165N 74LV165PW
Text: Philips Sem iconductors Product Specification 8-bit parallel-in/serial-out shift register FEATURES QUICK REFERENCE DATA GND = 0 V; T^, = 25°C; t, = t, < 2.5 ns • Optimized for Low Voltage applications: 1.0 to 3.6 V • Accepts TTL input levels between V . = 2.7 V and
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74LV165
74HC/HCT165.
74LV165D
74LV165DB
74LV165N
74LV165PW
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