Untitled
Abstract: No abstract text available
Text: Package outline Studless ceramic package; 4 leads SOT172D D A Q c D1 H b 4 b1 H 1 3 2 5 10 mm scale DIMENSIONS millimetre dimensions are derived from the original inch dimensions UNIT A b b1 c D D1 H Q mm 3.71 2.89 3.31 3.04 0.89 0.63 0.16 0.10 5.20 4.95
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OT172D
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RF Wideband Transistors
Abstract: No abstract text available
Text: PACKAGE OUTLINES Package SOT23 SOT54 SOT54variant SOT89 SOT122A SOT143B SOT143R SOT172A1 SOT172A2 SOT223 SOT323 SOT343N SOT343R SOT353 SOT363 Surface-mount yes no no yes no yes yes no no yes yes yes yes yes yes Page . . . . . . . .
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OT54variant
OT122A
OT143B
OT143R
OT172A1
OT172A2
OT223
OT323
OT343N
OT343R
RF Wideband Transistors
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sot172a2
Abstract: No abstract text available
Text: PDF: 1999 Apr 16 Philips Semiconductors Package outline Studded ceramic package; 4 leads SOT172A2 D A Q A D1 c M N W w1 M A M D2 N3 M1 X H detail X b 4 b1 H 1 3 2 5 10 mm scale DIMENSIONS millimetre dimensions are derived from the original inch dimensions
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OT172A2
sot172a2
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Untitled
Abstract: No abstract text available
Text: Package outline Studded ceramic package; 4 leads SOT172A1 D A Q A D1 c M N W w1 M A M D2 N3 M1 X detail X H b 4 b1 H 1 3 2 5 10 mm scale DIMENSIONS millimetre dimensions are derived from the original inch dimensions UNIT A b b1 c D D1 D2 H M M1 N N3 Q mm
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OT172A1
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Untitled
Abstract: No abstract text available
Text: PDF: 1999 Apr 16 Philips Semiconductors Package outline Studded ceramic package; 4 leads SOT172A1 D A Q A D1 c M N W w1 M A M D2 N3 M1 X detail X H b 4 b1 H 1 3 2 5 10 mm scale DIMENSIONS millimetre dimensions are derived from the original inch dimensions
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OT172A1
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Untitled
Abstract: No abstract text available
Text: Package outline Studded ceramic package; 4 leads SOT172A2 D A Q A D1 c M N W w1 M A M D2 N3 M1 X H detail X b 4 b1 H 1 3 2 5 10 mm scale DIMENSIONS millimetre dimensions are derived from the original inch dimensions UNIT A b b1 c D D1 D2 H M M1 N N3 Q mm
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OT172A2
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sot172d
Abstract: No abstract text available
Text: PDF: 1999 Apr 16 Philips Semiconductors Package outline Studless ceramic package; 4 leads SOT172D D A Q c D1 H b 4 b1 H 1 3 2 5 10 mm scale DIMENSIONS millimetre dimensions are derived from the original inch dimensions UNIT A b b1 c D D1 H Q mm 3.71 2.89
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OT172D
sot172d
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Untitled
Abstract: No abstract text available
Text: SOT172D CRDB4; blister pack; standard product orientation 12NC ending 112 Rev. 1 — 18 October 2012 Packing information 1. Packing method Blister cover ESD Label Foam Blister bottom ESD Label Printed plano box Space for additional label Preprinted ESD warning
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OT172D
msc071
OT172D
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RF Wideband Transistors
Abstract: MS-012AA
Text: PACKAGE OUTLINES Package SOT23 SOT54 SOT89 SOT96-1 SOT122A SOT122D SOT122E SOT143B SOT143R SOT172A1 SOT172A2 SOT223 SOT323 SOT343N SOT343R SOT353 SOT363 SOT551A Surface-mount yes no yes yes no no no yes yes no no yes yes yes yes yes yes yes Page . .
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OT96-1
OT122A
OT122D
OT122E
OT143B
OT143R
OT172A1
OT172A2
OT223
OT323
RF Wideband Transistors
MS-012AA
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Philips fr 153 30
Abstract: BFQ135
Text: Philips Components BFQ135 NPN 1 GHz WIDEBAND TRANSISTOR NPN transistor in a ceramic SOT172A2 package. It is prim arily intended for use in M ATV and microwave amplifiers, such as in aerial amplifiers, radar systems, oscilloscopes, spectrum analysers etc. Emitter ballasting resistors and application of gold sandwich metallization ensure an optimum
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OT172A2
Philips fr 153 30
BFQ135
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors bbS3T31 DD32EQ5 TMfi HIAPX Product specification NPN 4 GHz wideband transistor crystal X3A-BFQ34 N AUER PHILIPS/MSCRETE DESCRIPTION b^E ]> MECHANICAL DATA NPN crystal used in BFQ34T SOT37 , BFQ34 (SOT172) and BFG35 (SOT223). Crystals are supplied as whole
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bbS3T31
DD32EQ5
X3A-BFQ34
BFQ34T
BFQ34
OT172)
BFG35
OT223)
X3A-BFQ34
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification NPN 1 GHz video transistor crystal PHILIPS INTERNATIONAL X3A-BFQ268 7110fl2b OGMbldl 7fl3 • P H I N SbE D DESCRIPTION MECHANICAL DATA NPN crystal used in BFQ262 A (SOT32), BFQ265(A) (SOT128) and BFQ268 (SOT172). Crystals are supplied
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X3A-BFQ268
7110fl2b
BFQ262
BFQ265
OT128)
BFQ268
OT172)
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T343
Abstract: No abstract text available
Text: Concise Catalogue 1996 Philips Semiconductors RF & MICROWAVE SEMICONDUCTORS & MODULES DISCRETE SEMICONDUCTORS Wideband transistors THIR D-G ENER ATIO N NPN W IDEBAND TRANSISTO RS fT up to 8 GHz f-p/lg curve s ee chart package ceram ic SOT172 SOT143 SOT173
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OT172
OT173
BFQ66
OT143
BFG67
BFG197
OT223
OT323
OT343
BFG67W
T343
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BFQ254
Abstract: BFQ234 UBB692 sot172a3
Text: Product specification Philips Semiconductors r- 7 ^ 3 S " / 7 BFQ254; BFQ254/I PNP 1 GHz video transistor PHILIPS 7110fi2ti D045b3D ITI B I P H I N SbE » INTERNATIONAL PINNING DESCRIPTION PNP silicon epitaxial transistor in SOT172A1 and SOT172A3 envelopes,
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33-/Z
BFQ254;
BFQ254/I
711062b
D045b3D
OT172A1
OT172A3
BFQ254
OT172A1)
BFQ254/I
BFQ234
UBB692
sot172a3
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BFQ262
Abstract: BFQ265 BFQ268 X3A-BFQ268 SOT128 SOT172 crystal PHILIPS
Text: Philips Semiconductors Product specification NPN 1 GHz video transistor crystal PHILIPS INTERNATIONAL X3A-BFQ268 7110021, OQMblDl 7fl3 SbE D DESCRIPTION IPHIN MECHANICAL DATA NPN crystal used in BFQ262 A (SOT32), BFQ265(A) (SOT128) and BFQ268 (SOT172). Crystals are supplied
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BFQ262
BFQ265
OT128)
BFQ268
OT172)
X3A-BFQ268
X3A-BFQ268
7110asb
RV-3-5-52/733
BFQ268
SOT128
SOT172
crystal PHILIPS
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Untitled
Abstract: No abstract text available
Text: ^ 5 3 ^ 3 1 0031741 bTb Philips Semiconductors PNP 1 GHz video transistor APX Product specification BFQ254; BFQ254/I N AUER PHILIPS/DISCRETE DESCRIPTION bTE D PINNING PNP silicon epitaxial transistor in SOT172A1 and SOT172A3 envelopes, with emitter-ballasting resistors and
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BFQ254;
BFQ254/I
OT172A1
OT172A3
BFQ254
bbS3T31
MB3693
MEA335
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Untitled
Abstract: No abstract text available
Text: bbS 3T31 Philips Semiconductors 0032211 2H1 ^ l A P X Product specification NPN 1 GHz video transistor crystal — N X3A-BFQ268 AMER PHILIPS/DISCRETE DESCRIPTION fc^E 1 MECHANICAL DATA NPN crystal used in BFQ262 A (SOT32), BFQ265(A) (SOT128) and BFQ268 (SOT172). Crystals are supplied
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X3A-BFQ268
BFQ262
BFQ265
OT128)
BFQ268
OT172)
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BFQ34
Abstract: BFQ34T BFG35 X3A-BFQ34
Text: Phïlip^Semîconductors _ bbSBTBl □□32SQ5 M AP X T M fl Product specification NPN 4 GHz wideband transistor crystal X3A-BFQ34 N AMER PHILIPS/DISCRETE DESCRIPTION b^E D M E C H A N IC A L DATA NPN crystal used in BFQ34T SOT37 , BFQ34 (SOT172) and BFG35 (SOT223). Crystals are supplied as whole
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bbS3T31
32SD5
X3A-BFQ34
BFQ34T
BFQ34
OT172)
BFG35
OT223)
X3A-BFQ34
URV-3-5-52/733
BFQ34
BFQ34T
BFG35
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BFE505
Abstract: BFRS20 SOT-343
Text: Philips Semiconductors Concise Catalogue 1996 DISCRETE SEMICONDUCTORS Wideband transistors RF & MICROWAVE SEMICONDUCTORS & MODULES FOURTH-GENERATION NPN WIDEBAND TRANSISTORS fT up to 10 GHz package V 'c curve ceramic see -chart SOT172 SOT23 (18)
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OT172
BFQ621
BFT25A
BFR505
BFR520
BFR540
OT143
BFG25A/X
BFG505
BFG520
BFE505
BFRS20
SOT-343
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BFQ34
Abstract: crystal PHILIPS BFQ34T SOT172 BFG35 X3A-BFQ34
Text: Philips Semiconductors Product specification NPN 4 GHz wideband transistor crystal PHILIPS INTERNATIONAL • DESCRIPTION X3A-BFQ34 OOHbCnS tST « P H I N 711002b MECHANICAL DATA NPN crystal used in BFQ34T SOT37 , BFQ34 (SOT172) and BFG35 (SOT223). Crystals are supplied as whole
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-31-SO
BFQ34T
BFQ34
OT172)
BFG35
OT223)
X3A-BFQ34
711002b
X3A-BFQ34
RV-3-5-52/733
BFQ34
crystal PHILIPS
BFQ34T
SOT172
BFG35
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motorola transistor 5331
Abstract: BFQ254 BFQ234
Text: Philips Semiconductors bb53^31 Q031741 bTb HAPX PNP 1 GHz video transistor Product specification BFQ254; BFQ254/1 N AUER PHILIPS/DISCRETE DESCRIPTION b=JE D PINNING PNP silicon epitaxial transistor in SOT172A1 and SOT172A3 envelopes, with emitter-ballasting resistors and
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PDF
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00317m
BFQ254;
BFQ254/1
OT172A1
OT172A3
BFQ254
OT172A1)
BFQ254/I
0Q3174M
motorola transistor 5331
BFQ234
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TRANSISTOR D 2627
Abstract: D 4206 TRANSISTOR BFQ135 transistor 224-1 base collector emitter DIN45004B bfq135 scattering 1817 transistor 1348 transistor TRANSISTOR C 2570 c 2570 transistor
Text: P hilip^Sem iconductor^^^^ I I bbS 3 cJ3 1 0 0 3 1 Li Li 5 1 5 'J H i APX Product specification NPN 6.5 GHz wideband transistor BFQ135 N DESCRIPTION AMER P H IL IP S /D IS C R E T E bTE PINNING NPN transistor in a 4-lead dual-emitter SOT172A1 envelope with a ceramic cap. All leads are
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BFQ135
OT172A1
OT172A1.
SYMB69
TRANSISTOR D 2627
D 4206 TRANSISTOR
BFQ135
transistor 224-1 base collector emitter
DIN45004B
bfq135 scattering
1817 transistor
1348 transistor
TRANSISTOR C 2570
c 2570 transistor
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BFQ268
Abstract: No abstract text available
Text: Philips Semiconductors_ ,—. 7^ 3 3 - 0 5 - NPN 1 GHz video transistor PH ILIPS INTERNATIONAL DESCRIPTION Product specification - BFQ268; BFQ268/1 5bE D • 7 1 1 D flP b OOMShS? 344 « P H I N PINNING NPN silicon epitaxial transistor with
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BFQ268;
BFQ268/1
711002t)
BFQ268
OT172A1)
BFQ268/I
OT172A3
BFQ268/I
004SbbD
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B303D
Abstract: TT 2222 npn transistor tt 2222 transistor npn 2xi transistor sot t06 FTC 960 trimmer PT 10 TT 2222 ka band transistor
Text: b5E » H 71106Eb D0b3DEÛ 07T « P H I N BLV91/SL PHILIPS INTERNATIONAL UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor designed fo r use in mobile radio transm itters in the 900 MHz band. Features: • diffused emitter-ballasting resistors fo r an optim um temperature profile.
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BLV91/SL
OT-172D)
711005b
DGb3034
BLV91/SL
B303D
TT 2222 npn
transistor tt 2222
transistor npn 2xi
transistor sot t06
FTC 960
trimmer PT 10
TT 2222
ka band transistor
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