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Velleman Inc PLA175N07 1.75 Mm (1/16") Pla Filament - Natural - 750 G/Box (Carton) \|Velleman PLA175N07
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	PLA175N07	Bulk			1	1 $17.4 10 $17.4 100 $17.4 1000 $17.4 10000 $17.4	Buy Now

75N07 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
75n07 Abstract: 75N075 Text: E 75N075 HEXFET z z z z z Dynamic dv/dt Rating 175°C Operating Temperature Fast switching Ease of Paralleling Simple Drive Requirements Power MOSFET VDSS = 75V ID25 = 75A RDS ON = 13.0 mΩ Description Third Generation HEXFETs from International Rectifier provide the designer	Original	PDF	75N075 O-220 50watts. 00A/s 370mH, 00A/s, 75n07 75N075
gw 340 diode Abstract: No abstract text available Text: Advanced Power Electronics Corp. 75N07GW-HF-3 N-channel Enhancement-mode Power MOSFET Low Gate Charge D BV DSS Simple Drive Requirement 75V R DS ON Fast Switching Characteristics G ID 11mΩ 90A S Description Advanced Power MOSFETs from APEC provide the designer with the best	Original	PDF	AP75N07GW-HF-3 AP75N07GW-HF-3 Ratin40 AP75N07 75N07GW gw 340 diode
Untitled Abstract: No abstract text available Text: 75N07AGP RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic BVDSS 75V RDS ON 11mΩ ID G 80A S Description Advanced Power MOSFETs from APEC provide the designer with	Original	PDF	AP75N07AGP O-220 O-220 75N07AGP
75N07Gp Abstract: No abstract text available Text: Advanced Power Electronics Corp. 75N07GP/S-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement D Low On-resistance Fast Switching Performance G RoHS-compliant, halogen-free BV DSS 75V RDS ON 11mΩ ID 80A S Description Advanced Power MOSFETs from APEC provide the designer with the best	Original	PDF	AP75N07GP/S-HF-3 O-263 AP75N07GS-HF-3 O-263 AP75N07GP-HF-3 O-220 AP75N07 75N07GS 75N07Gp
75N07Gp Abstract: 75n07 75N07GS Gv09 L4AA b1l3 Text: 75N07GS/P RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic BVDSS 75V RDS ON 11mΩ ID G 80A S Description Advanced Power MOSFETs from APEC provide the	Original	PDF	AP75N07GS/P O-263 AP75N07GP) O-220 M1-S3-G-v04 O-220 75N07GP M1-P3-6-Gv09 75N07Gp 75n07 75N07GS Gv09 L4AA b1l3
75N07 Abstract: No abstract text available Text: PHASE WAVE 60Hz DERATING 1 –50 FORWARD CURVE AMBIENT 1FIG. 25TSINGLE 4 TEMPERATURE 75HALFCURRENT 10 100 20 ℃ 125 150 100 175 75V / 75A N-Channel Enhancement Mode MOSFET FIG. –2MAXIMUM 10 2SINGLE 5NON10 0.0 0.2 0.4 0.6 75N075T 75V, RDS(ON)=9.0mW@VGS=10V, ID=20A	Original	PDF	HY75N075T O-220AB 2002/95/EC O-220AB 250mA 125oC -55oC 15-May-2012 75N07
75n07 Abstract: No abstract text available Text: Advanced Power Electronics Corp. 75N07AGP-HF-3 N-channel Enhancement-mode Power MOSFET Low Gate Charge D Simple Drive Requirement Fast Switching Performance G BV DSS 75V RDS ON 11mΩ ID RoHS-compliant, halogen-free 80A S Description Advanced Power MOSFETs from APEC provide the designer with the best	Original	PDF	AP75N07AGP-HF-3 AP75N07AGP-HF-3 O-220 O-220 AP75N07A 75N07AGP 75n07