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Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: KM41 V4000DT CMOS DRAM ELECTRONICS 4 M X 1 Bit CMOS Dynamic HAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 1 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access	OCR Scan	PDF	V4000DT KM41V4000DT 7Tb4142 003412b
Untitled Abstract: No abstract text available Text: KM416V256DT CMOS D R A M ELECTRO NICS 256K x 16 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time	OCR Scan	PDF	KM416V256DT 256Kx16
Untitled Abstract: No abstract text available Text: KM44C4000BK CMOS D R A M ELECTRONICS 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a lamily ol 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle	OCR Scan	PDF	KM44C4000BK 16Mx4, 512Kx8) 7Tb4142 GG34404 7Tb4142 G344D5
Untitled Abstract: No abstract text available Text: KM44C1004DT CMOS DR A M ELECTR O NICS 1 M x 4 B i t CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access	OCR Scan	PDF	KM44C1004DT 512Kx8) G0342S3 G034254
KM41C1000CJ-6 Abstract: KM41C1000cJ-7 KM41C1000C-6 KM41C1000C-8 KM41C1000CP-6 KM41C1000CG-7 741i DRAM 18DIP km41c1000 KM41C1000CP-7 Text: SAMSUNG E L E C TRONICS INC b?E ]> • 7=îtim42 0G153Ö0 553 I SMGK KM41C1000C CMOS DRAM 1Mx1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1000C is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its	OCR Scan	PDF	b4142 KM41C1000C KM41C1000C-6 110ns KM41C1000C-7 130ns KM41C1000C-8 150ns 256Kx4 KM41C1000CJ-6 KM41C1000cJ-7 KM41C1000CP-6 KM41C1000CG-7 741i DRAM 18DIP km41c1000 KM41C1000CP-7
C1204B Abstract: No abstract text available Text: KM416C1204BT ELECTRONICS CMOS DRAM 1 M x 1 6 B i t C M O S Dynamic H A M with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mod offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power	OCR Scan	PDF	KM416C1204BT 16Bit 1Mx16 03042b C1204B
ks57c2016 Abstract: samsung KS57C2016 sequential timer working Text: KS57C2016 C l C i* ELECTRONICS Microcontroller DESCRIPTION The KS57C2016 single-chip 4-bit microcontroller is fabricated using an advanced CMOS process. With an up-to-20-digit LCD direct-drive capability and up to 40 pins for LCD segment data output, a versatile 16-bit	OCR Scan	PDF	KS57C2016 KS57C2016 up-to-20-digit 16-bit 20-digit 40-segment 0011B; 0000B. 1001B, samsung KS57C2016 sequential timer working
pj 86 diode Abstract: pj 54 diode 60v 10a p type mosfet diode 4j T02202 RS DT 27 DIODE PJ 63 diode RS-242 Text: IRFZ14A A d va n ce d Power MOSFET FEATURES BVDss = 60 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on ■ Lower Input Capacitance lD = 10 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175* «Operating Temperature	OCR Scan	PDF	IRFZ14A O-220 30-oto T0-220 003b32fl 3b32ti O-220 500MIN DD3b33D pj 86 diode pj 54 diode 60v 10a p type mosfet diode 4j T02202 RS DT 27 DIODE PJ 63 diode RS-242