Untitled
Abstract: No abstract text available
Text: IRF520A Advanced Power MOSFET FEATURES BVDSS - 100 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ^DS on = 0.2Í2 lD = 9-2 A ■ 175°C Operating Temperature
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IRF520A
QQ3b32fl
3b32ti
O-220
7Tb4142
DD3b33D
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mosfet vn 10
Abstract: IRFZ24A bvn mosfet 0050II
Text: IRFZ24A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ ■ BV dss = 60 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175* «Operating Temperature Lower Leakage Current : 10 uA Max. @ VOS= 60V
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IRFZ24A
30-OTO
T0-220
003b32fl
3b32ti
O-220
500MIN
DD3b33D
mosfet vn 10
bvn mosfet
0050II
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Untitled
Abstract: No abstract text available
Text: SSP3N80A A d v a n c e d Power MOSFET FEATURES B ^ dss - • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower-Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |iA Max. @ VDS = 800V
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OCR Scan
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PDF
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SSP3N80A
00403b4
003b32fl
3b32t
O-220
7Tb4142
DD3b33D
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Untitled
Abstract: No abstract text available
Text: SSP4N60AS A d va n ce d Power MOSFET FEATURES B V DS • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 nA Max. @ V os = 600V
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OCR Scan
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PDF
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SSP4N60AS
G04D37b
003b32fl
3b32t
O-220
00M1N
7Tb4142
DD3b33D
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SSP45N20A
Abstract: pj 53 diode
Text: SSP45N20A Advanced Power MOSFET FEATURES BVdss = 200 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on ■ Lower Input Capacitance lD = 35 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 HA (Max.) @ V DS = 200V
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OCR Scan
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PDF
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SSP45N20A
001010b
30-OTO
T0-220
QQ3b32fl
O-220
500MIN
7Tb414E
DD3b33D
SSP45N20A
pj 53 diode
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