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    7N60C Search Results

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    7N60C Price and Stock

    Infineon Technologies AG SPD07N60C3ATMA1

    LOW POWER_LEGACY
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    DigiKey SPD07N60C3ATMA1 Cut Tape 4,303 1
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    Mouser Electronics SPD07N60C3ATMA1 65
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    onsemi HGTD7N60C3S9A

    IGBT 600V 14A TO252AA
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    HGTD7N60C3S9A Digi-Reel 1,816 1
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    Rochester Electronics HGTD7N60C3S9A 5,000 1
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    Infineon Technologies AG SPW47N60C3FKSA1

    MOSFET N-CH 650V 47A TO247-3
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    DigiKey SPW47N60C3FKSA1 Tube 640 1
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    Avnet Americas SPW47N60C3FKSA1 Tube 960 15 Weeks 30
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    SPW47N60C3FKSA1 Bulk 16 Weeks, 4 Days 1
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    Newark SPW47N60C3FKSA1 Bulk 5,707 1
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    Chip1Stop SPW47N60C3FKSA1 Tube 98
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    EBV Elektronik SPW47N60C3FKSA1 74,640 16 Weeks 240
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    New Advantage Corporation SPW47N60C3FKSA1 59,520 1
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    Win Source Electronics SPW47N60C3FKSA1 49,999
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    Infineon Technologies AG SPA07N60C3XKSA1

    MOSFET N-CH 650V 7.3A TO220-FP
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    DigiKey SPA07N60C3XKSA1 Tube 461 1
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    Newark SPA07N60C3XKSA1 Bulk 530 1
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    Rochester Electronics SPA07N60C3XKSA1 100 1
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    Chip1Stop SPA07N60C3XKSA1 Tube 5,988
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    Littelfuse Inc IXKR47N60C5

    MOSFET N-CH 600V 47A ISOPLUS247
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    DigiKey IXKR47N60C5 Tube 107 1
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    Find more 7N60C price and stock on Findchips.com

    7N60C Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    7N60C IXYS Hiperfast IGBT Lightspeed Series Original PDF
    7N60C3 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    7N60C3 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    7N60C3D Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    7N60C3S Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    7N60C Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    7N60C

    Abstract: TO-220 footprint
    Text: HiPerFASTTM IGBT LightspeedTM Series VCES IC25 VCE sat tfi IXGA 7N60C IXGP 7N60C Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C


    Original     		7N60C O-220AB O-263 tempera020 728B1 7N60C TO-220 footprint PDF

    7N60C

    Abstract: No abstract text available
    Text: IXGA 7N60CD1 IXGP 7N60CD1 HiPerFASTTM IGBT with Diode LightspeedTM Series VCES IC25 VCE sat typ tfi = 600 V = 14 A = 2.0 V = 45 ns Preliminary Data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		7N60CD1 O-220AB O-263 728B1 7N60C PDF

    7N60C

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFASTTM IGBT LightspeedTM Series Symbol Test Conditions IXGA 7N60C IXGP 7N60C Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C


    Original     		7N60C 7N60C O-220AB O-263 O-220 O-220) PDF

    7N60C

    Abstract: TO-220AB footprint
    Text: IXGA 7N60CD1 IXGP 7N60CD1 HiPerFASTTM IGBT with Diode LightspeedTM Series Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 14 A IC90 TC = 90°C


    Original     		7N60CD1 7N60CD1 O-220AB O-263 7N60C TO-220AB footprint PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information IXGA 7N60CD1 IXGP 7N60CD1 HiPerFASTTM IGBT with Diode LightspeedTM Series Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V I C25 TC = 25°C


    Original     		7N60CD1 O-220AB O-263 PDF

    Untitled

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT LightspeedTM Series Symbol Test Conditions VCES TJ = 25°C to 150°C VCGR TJ = 25°C to 150°C; R VGES VCES IC25 VCE sat tfi IXGA 7N60C IXGP 7N60C Maximum Ratings 600 = 1 MΩ V Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 14 A


    Original     		7N60C O-220AB O-263 728B1 PDF

    7N60C

    Abstract: TO-220 footprint IXGA
    Text: Advanced Technical Information HiPerFASTTM IGBT LightspeedTM Series Symbol Test Conditions IXGA 7N60C IXGP 7N60C Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C


    Original     		7N60C O-220AB O-263 7N60C TO-220 footprint IXGA PDF

    7N60C

    Abstract: 7N60CD1 S500C
    Text: Advanced Technical Information HiPerFASTTM IGBT with Diode IXGA 7N60CD1 IXGP 7N60CD1 LightspeedTM Series Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient


    Original     		7N60CD1 O-220AB O-263 O-220 7N60C 7N60CD1 S500C PDF

    Untitled

    Abstract: No abstract text available
    Text: IXGA 7N60CD1 IXGP 7N60CD1 HiPerFASTTM IGBT with Diode LightspeedTM Series VCES IC25 VCE sat typ tfi = 600 V = 14 A = 2.0 V = 45 ns Preliminary Data Symbol Test Conditions VCES TJ = 25°C to 150°C VCGR TJ = 25°C to 150°C; R VGES Maximum Ratings 600 600 V


    Original     		7N60CD1 O-220AB O-263 728B1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFASTTM IGBT with Diode IXGA 7N60CD1 IXGP 7N60CD1 LightspeedTM Series Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient


    Original     		7N60CD1 7N60CD1 O-220AB O-263 PDF

    200n60

    Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120
    Text: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE(sat) 600 1000 TO-220 TO-263 TO-247 IC VCE(sat) (IXGP) (IXGA) (IXGH) max TC = 25 °C TC=25 °C A V 40 56 60 40


    Original     		PLUS247 20N30 28N30 30N30 40N30 31N60 38N60 41N60 60N60 O-264 200n60 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120 PDF

    7n60b

    Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
    Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3


    Original     		AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 142-12io8 142-16io8 19-08ho1 7n60b 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80 PDF

    7N60B equivalent

    Abstract: 60N60B2-7Y 7N60C-2X 7N60B-2X 10n60b ixgd 28N12 60N60C2-7Y 20N120 16N60C2
    Text: Chip-Shortform2004.pmd Insulated Gate Bipolar Transistors G-Series Type VCES VCE sat @ IC Chip type Chip size dimensions 6 TJM = 150°C V V A mm mils Source bond wire Equivalent device recommended data sheet 26.10.2004, 12:44 High Gain High Gain High Gain


    Original     		7N60B-2X 7N60C-2X 16N60B2-3X 16N60C2-3X 30N60B2-4X 30N60C2-4X 40N60B2-5Y 40N60C2-5Y 60N60B2-7Y 60N60C2-7Y 7N60B equivalent 10n60b ixgd 28N12 20N120 16N60C2 PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 PDF

    7N60C

    Abstract: LI 20 AB
    Text: AdvancedTechnical Information HiPerFAST IGBT Lightspeed™ Series V CES IXGA 7N60C IXGP 7N60C ^C25 V CE sat typ »„ Symbol Test Conditions V CES TJ = 25°C to 150°C 600 V VC G R T,J = 2 5 °C to 1 5 0 °C ; RrCab = 1 MU 600 V V G ES Continuous ±20 V


    OCR Scan     		7N60C 7N60C O-22QAB O-263 LI 20 AB PDF

    7N60C3

    Abstract: 7N60C3D S7N60 g7N60C3D Zener Diode LT 432 diode lt 823 S7N60C3D 600VU NT 407 F power transistor
    Text: H G TP 7N60C3D, HGT1S 7N60C3D, 7N60C3DS H A R R IS S E M I C O N D U C T O R 1 4 A, 60 0V, U F S S e r i e s N - C h a n n e l I G B T January 1997 wi th An ti - P a r a i I el H y p e r f a s t D i o d e s Features Packaging JEDEC TO-22QAB • 1 4A, 6 0 0 V at T c = 2 5 ° C


    OCR Scan     		7N60C3D, HGT1S7N60C3DS O-22QAB O-262AA HGTP7N60C3D, HGT1S7N60C3D HGT1S7N60C3DS -800-4-H 7N60C3 7N60C3D S7N60 g7N60C3D Zener Diode LT 432 diode lt 823 S7N60C3D 600VU NT 407 F power transistor PDF

    7n60c

    Abstract: No abstract text available
    Text: □ IXYS Advanced Technical Information HiPerFAST IGBT Lights peed™ Series V CES 7N60C IXGP 7N60C ^C25 V CE sat typ Maximum Ratings Symbol Test Conditions V CES Tj = 25°C to 150°C 600 V V CGR Tj = 25°C to 150°C; RGE = 1 M£i 600 V v GES Continuous


    OCR Scan     		IXGA7N60C 7N60C O-220) O-220 O-263 O-263 PDF

    Untitled

    Abstract: No abstract text available
    Text: HAFRFRIS S E M I C O N D U C T O R 7N60C3, 7N60C3S, 7N60C3 14A, 600V, UFS Series N-Channel IGBTs January 1997 Packaging Features j e d e c t o - 22oab • 14A, 600V at Tc = 25°C • 600V Switching SOA Capability • Typical Fall T i m e . 140ns at T j = 150°C


    OCR Scan     		HGTD7N60C3, HGTD7N60C3S, HGTP7N60C3 22oab 140ns HGTD7N60C3S HGTP7N60C3 PDF

    7N60B

    Abstract: 65A3 40N60A 60N60 IXGA 12N60C 200n60 ixgh 1500 30N30 IXG IGBT ixgh
    Text: Insulated Gate Bipolar Transistors IGBT G series (high gain, high speed) v CE{Mt) Type T „ = 25°C A = 150°C New t jm > > IXGH 28N30 > 56 60 60_ IXGH 30N30 > IXGH 4QN30 > IXGH 31N60 IXGH IXGH IXGH > IXGN IXGN > IX G A 12N100 IXGH 12N100 IXGP 12N100 28


    OCR Scan     		30N30 28N30 4QN30 31N60 38N60 41N60 60N60 200N60 25N100A 7N60B 65A3 40N60A IXGA 12N60C 200n60 ixgh 1500 IXG IGBT ixgh PDF

    120n60b

    Abstract: 40N30BD1 32N50 7n60c 20N60BU1 40N60A B-2160 200n60 12n60c IXGH24N50B
    Text: Contents IGBT V CE sat 1 TO-220 TO-263 ! TO-247 (IXGP) (IXGA) ! (IXGH) max Tc=25 °C PLUS247 (IXGX) TO-268 (IXGT) TO-264 (IXGK) miniBLOC {IXGN) Page V 300 600 40 56 ► i* G H ¿',N 30 >• IXGH 28N30 60 IXGH 30N30 IXGH 40N30 40 1.7 IXGH 3 ÍN S 0 76 * 75 *


    OCR Scan     		O-220 O-263 O-247 28N30 30N30 40N30 2N100 8N100 6N100 12N10Q 120n60b 40N30BD1 32N50 7n60c 20N60BU1 40N60A B-2160 200n60 12n60c IXGH24N50B PDF

    DSE 130 -06A

    Abstract: vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50
    Text: Alphanumerical Index A AXC-051 AXC-051-R AXC-102 AXV-002 48 48 48 49 C CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 ¡08 19-08 h oi 19-08 h o lS 19-12 h o i 19-12 h o lS 20*12 io1 20-14 ¡01 20-16 ¡01


    OCR Scan     		AXC-051 AXC-051-R AXC-102 AXV-002 015-14to1 2x45-16io1 2x60-08io1 2x60-12io1 2x60-14io1 2x60-16io1 DSE 130 -06A vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50 PDF