Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC tiHE D m 7U4142 256Kx4 Bit CMOS VIDEO RAM FEATURES • Dual Port Architecture 256K x 4 bits RAM port 512 x 4 bits SAM port • Performance range: -8 Item • • • • • • • • • • • • -10 80ns 1 0 0 ns access time t R A c
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7U4142
256Kx4
150ns
180ns
28-PIN
KM424C256
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PDF
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MPS2907
Abstract: MPS2907A PN2907A
Text: SAM S UN G SEMICONDUCTOR INC IME D MPS2907A | 7U4142 0007311 6 | PNP EPITAXIAL SILICON TRANSISTOR T-29-21 GENERAL PURPOSE TRANSISITOR • Collector-Emitter Voltage: Vceo = 60V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Ch aracteristic
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cil14m2
MPS2907A
625mW
MPS2907
T-29-21
150mA,
500mA,
PN2907A
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PDF
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC 42E ]> MMBTH17 B 7U4142 000^054 2 »StlGK NPN EPITAXIAL SILICON TRANSISTOR CATV TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta= 25 °C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Dissipation
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OCR Scan
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7U4142
MMBTH17
200MHz
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PDF
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Untitled
Abstract: No abstract text available
Text: SAMSUNG SEMICONDUCTOR INC 23E D 7U4142 OQOÖäOb 7 • T - £ 2 - 3 3- BUS CONTROLLER FOR 80286 MICROPROCESSORS KS82C288 FEATURES/BEN EFITS DESCRIPTIO N • Provides commands and control or local and system bus In 80286-based machines The 20-pin C M O S KS82G288 controls buses in 80286based computer systems. The Bus Controller provides
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7U4142
KS82C288
80286-based
20-pin
KS82G288
80286based
KS82C289
KS82C284
IEEE-796
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PDF
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7m142
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC 42E D LM324 • 7U4142 POG'1372 S O S f l G K LINEAR INTEGRATED CIRCUIT QUAD LOW POWER OP AMP The LM324 of quad operational am plifiers are very low power operation, and can operate at supply voltages from 3 volts to 32 volts. FEATURES
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OCR Scan
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LM324
7U4142
LM324
00V/m
LM324N
LM324D
7m142
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PDF
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Opamp Voltage follower
Abstract: XZ 068 c3875 KS0083 KS0103 KS0104
Text: KS0103 CMOS DIGITAL INTEGRATED CIRCUIT 68 CHANNEL CO M M O N DRIVER FOR DOT M ATRIX LCD 80 QFP The K S 0 1 0 3 is a LCD driver LSI w hich is fabricated by low pow e r CM O S high voltage p ro ce ss tech n olo gy. This device co nsists of 6 8 bit bidirectional shift register, 6 8 bit level shifter and 6 8 bit 4-level
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KS0103
KS0103
00E0775
Vdd-2/15
VDD-14/15
vdd-1/15
vdd-13/15
DD2D77t
Opamp Voltage follower
XZ 068
c3875
KS0083
KS0104
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PDF
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Untitled
Abstract: No abstract text available
Text: SAMSUNG SEMICONDUCTOR INC S3E D • 00002^ KM62256A/KM62256AL 1 ■ CMOS SRAM 3 2 K x 8 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 60, 100, 120 ns max . • Low Power Dissipation Standby: 0.55mW (max.) Operating: 248mW (max.) • Low Data Retention Current: 50jiA (max.)
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KM62256A/KM62256AL
248mW
50jiA
28-pin
KM62256A/AL
KM62256AVKM62256AL
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PDF
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rbbb
Abstract: No abstract text available
Text: KM416V254DJ ELECTRONICS CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V ,
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KM416V254DJ
256Kx16
DQ0-DQ15
rbbb
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PDF
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Untitled
Abstract: No abstract text available
Text: SAMSUNG SE MI CONDU CT OR INC Tfl KA3524 DE 7TL41M5 OO OMbSl b LINEAR INTEGRATED CIRCUIT REGULATOR PULSE WIDTH MODULATOR The KA3524 regulating pulse width modulator contains all of the control circuitry necessary to Implement switching regulators of either
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KA3524
7TL41M5
KA3524
7U4142
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PDF
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Untitled
Abstract: No abstract text available
Text: KM68257B CMOS SRAM 32K X 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 20, 25ns max • Low Power Dissipation Standby (TTL) : 40mA (max.) 2mA(Max.) Operating KM68257B-15 : 150mA (max.) KM68257B-20: 140mA (max.) KM68257B-25: 130mA (max.)
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KM68257B
KM68257B-15
150mA
KM68257B-20:
140mA
KM68257B-25:
130mA
KM68257BP:
28-DIP-300
KM68257BJ
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PDF
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Untitled
Abstract: No abstract text available
Text: KMM364E1600AK/AS KMM364E1680AK/AS DRAM MODULE KMM364E1600AK/AS & KMM364E1680AK/AS Fast Page with EDO Mode 16Mx64 DRAM DIMM based on 16Mx4, 4K & 8K Refresh, 5V FEATURES GENERAL DESCR IPTIO N CMOS 16Mx4bit DRAMs in SOJ/TSOP-II 400mii • Part Identification
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KMM364E1600AK/AS
KMM364E1680AK/AS
KMM364E1680AK/AS
16Mx64
16Mx4,
16Mx4bit
400mii
KMM364E1600AK
KMM364E1600AS
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PDF
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pixel clock generator ttl
Abstract: No abstract text available
Text: SAMSUNG ELECTR ONI CS INC M2E D KS82C670/671 BB 7 T b M m 2 000^470 S • SMGK Video Clock Generator P relim inary FEATURES • Single/Dual Clock output versions • Custom ROM programmed frequencies up to 100 MHz ■ "On-the-1ly,rfrequency selection • Separate on-chip Phase Locked Loops
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OCR Scan
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KS82C670/671
140MHz
KS82C670
KS82C671
KS82C671)
KS82C670/671
20-Pln
pixel clock generator ttl
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PDF
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rb414
Abstract: KM44C1003
Text: KM44C1003DT CMOS DR A M ELECTRONICS 1M x 4 Bit CMOS Quad CAS DRAM with Fast Page Mode DESCRIPTION This is a fam ily of 1,048,576 x 4 bit Fast Page Mode Quad CAS CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Access time -5, -6 or -7 , power
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KM44C
HHHHHHI-INMHHM01
KM44C1003DT
rb414
KM44C1003
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PDF
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512X16
Abstract: KM6164002B 512X16 sram
Text: Pro-iïiTTin&y CMOS SRAM KM6164002B, KM6164002BI 256K x 16 Bit High-Speed CMOS Static RAM FEATURES G ENER AL DESCRIPTION •• Fast Access Time 10,12,15 * Max. - Low Power Dissipation Standby (TTL) : 40* • (Max.) The KM6164002B is a 4,194,304-bit high-speed Static Random
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KM6164002B,
KM6164002BI
256Kx
KM6164002B
I/O16
KM6164002BJ
44-SOJ-400
KM6164002BT
512X16
512X16 sram
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PDF
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96-Seg
Abstract: No abstract text available
Text: KS57C2408 4-BIT CMOS Microcontroller ELECTRONICS Product Specification OVERVIEW The KS57C2408 single-chip CMOS microcontroller is designed for very high performance using Samsung's newest 4-bit product development approach, SAM4 Samsung Arrangeable Microcontrollers . Its main features
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KS57C2408
KS57C2408
up-to-12-digit
16-bit
80-pin
002b535
71b4142
D0SbS37
96-Seg
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PDF
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KM622568
Abstract: KM62256B
Text: KM62256BL/KM62256BL-L CMOS SRAM 32,768 WORD x 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast A ccess Tim e: 70, 85, 100, 120ns Max. • Low Pow er D issipatio n S tandby (CMOS): 10/xW (Typ.) L-Version 5/iW (Typ.) LL-Version O perating : 35m W /1M H z (Max.)
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KM62256BL/KM62256BL-L
120ns
10/xW
62256B
28-DIP-600B
KM622S6BLG/BLG
28-SOP-450
KM62256BLS/BLS-L
28-DIP-300
KM62256BLTG/BLTG-L
KM622568
KM62256B
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PDF
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Untitled
Abstract: No abstract text available
Text: CMOS SRAM KM641001 256K x 4 Bit With UB High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35 ns(Max.) The KM641001 is a 1,048,576-bit • Low Power Dissipation Random Access Memory organized as 262,144 words Standby (TTL)
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KM641001
KM641001
576-bit
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PDF
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Untitled
Abstract: No abstract text available
Text: MEE D SAMSUNG ELEC TRONICS INC n 7%4142 DGlOObS 1 BHSMiSK KM41C1002B CMOS DRAM 1M X 1 Bit C M O S Dynamic R A M with Static Column M ode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1002B is a CMOS high speed 1,048,576 x 1 Dynamic Random Access Memory. Its de
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KM41C1002B
KM41C1002B
KM41C1002B-
110ns
130ns
150ns
KM41C1002B-10
KM41C1002B"
100ns
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PDF
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC 42E D KA2220 S 7^4142 0 0 0 =120 0 S E3SMÛK LINEAR INTEGRATED CIRCUIT 'T - 'n - T A EQUALIZER AMPLIFIER WITH ALC The KA2220 Is a monolithic integrated circuit consisting of a preamplifier and ALC circuit for cassette tape recorders
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KA2220
KA2220
7U4142
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PDF
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC 7 ^ 4 1 4 2 GÜ1220B 4GG « S U G K N-CHANNEL POWER MOSFETS bME D IRF710/711/712/713 FEATURES • • • • • • • Lower Rds on Improved inductive ruggedness Fast switching times Rugged polysillcon gate cell structure Lower input capacitance
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1220B
IRF710/711/712/713
IRF710
IRF711
IRF712
IRF713
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PDF
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Untitled
Abstract: No abstract text available
Text: K S 8 8 C 0 1 16 Mi crocontroller ELECTRO NICS DESCRIPTION The KS88C0116 single-chip 8-bit microcontroller is fabricated using an advanced CMOS process. With two 8-bit timer/counters, two 16-bit timer/counters, a large number of general I/O pins, a UART, and a 16-bit backup timer,
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KS88C0116
16-bit
272-byte
16-Kbyte
64-Kbyte
S-SDIP-750
D032464
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PDF
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KMM591000A
Abstract: KMM491000A-10 KMM491000A-8 30-pin simm memory
Text: SAMSUNG SEMICONDUCTOR INC S3E D 7^4145 KMM491000A/KMM591000A 0Q0ÔS31 4 I MEMORY MODULES 1 M x 9 DRAM SIP and S IM M Memory Modules FEATURES GENERAL DESCRIPTION _ • 1,048,576 x 9-bit Organization • Ninth device has separate 0 , Q and CAS for Parity
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OCR Scan
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KMM491000A/KMM591000A
KMM491000A
KMM591000A
KM41C1000AJ
20-pin
7Tb4142
M491OOOA/KMM591OOOA
KMM591000
KMM491000A
KMM491000A-10
KMM491000A-8
30-pin simm memory
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PDF
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29V040
Abstract: No abstract text available
Text: PRELIMINARY KM29V040T FLASH MEMORY 512Kx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Power Supply • Organization - Memory Cell Array : 512Kx8 - Data Register : 32 x 8 bit • Automatic Program and Erase Typical - Frame Program : 32 Byte in 500us
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OCR Scan
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KM29V040T
512Kx8Bit
512Kx8
500us
400mil/0
KM29V040T
KM29V040
-TSOP2-400F
-TSQP2-400R
29V040
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PDF
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Untitled
Abstract: No abstract text available
Text: KMM466S424DT PC66 SODIMM Revision History Revision 0.0 July 7,1999 • Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER. • Skip ICC4 value of CL=2 in DC characteristics in datasheet. • Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER.
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KMM466S424DT
4Mx16
KM416S4030DT
7U4142
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PDF
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