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    80N50P Search Results

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    80N50P Price and Stock

    Littelfuse Inc IXFN80N50P

    MOSFET N-CH 500V 66A SOT227B
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    DigiKey IXFN80N50P Tube 2,956 1
    • 1 $34.54
    • 10 $25.548
    • 100 $34.54
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    Newark IXFN80N50P Bulk 103 1
    • 1 $27.74
    • 10 $23.72
    • 100 $22.09
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    RS IXFN80N50P Bulk 8 Weeks 10
    • 1 -
    • 10 $34.86
    • 100 $34.86
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    Chip1Stop IXFN80N50P Tube 296
    • 1 $24.7
    • 10 $21.5
    • 100 $19.4
    • 1000 $19.4
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    Littelfuse Inc IXFX80N50P

    MOSFET N-CH 500V 80A PLUS247-3
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    DigiKey IXFX80N50P Tube 30 300
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    Newark IXFX80N50P Bulk 300
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    • 1000 $14.81
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    IXYS Corporation IXFN80N50P

    MOSFET Modules 500V 80A
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    Mouser Electronics IXFN80N50P 736
    • 1 $30.15
    • 10 $23.62
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    TTI IXFN80N50P Tube 300
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    New Advantage Corporation IXFN80N50P 681 1
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    IXYS Corporation IXFK80N50P

    MOSFETs 500V 80A
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    Mouser Electronics IXFK80N50P 152
    • 1 $20.66
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    TTI IXFK80N50P Tube 300
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    TME IXFK80N50P 22 1
    • 1 $19.72
    • 10 $19.72
    • 100 $15.44
    • 1000 $14.98
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    IXYS Corporation IXFX80N50P

    MOSFETs 500V 80A
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    Mouser Electronics IXFX80N50P 60
    • 1 $22.02
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    • 100 $17.69
    • 1000 $14.12
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    TTI IXFX80N50P Tube 300 30
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    • 100 $16.92
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    TME IXFX80N50P 1
    • 1 $24.12
    • 10 $19.17
    • 100 $17.27
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    80N50P Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    80N50P

    Abstract: IXFK 80N50P PLUS247
    Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFK 80N50P IXFX 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500 V = 80 A Ω < 65 mΩ < 200 ns TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings


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    80N50P O-264 80N50P IXFK 80N50P PLUS247 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFK 80N50P IXFX 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500 V = 80 A Ω < 75 mΩ < 200 ns TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings


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    80N50P 80N50P O-264 PLUS247 PDF

    80n50

    Abstract: 80N50P ISOPLUS247 4525 GE alize
    Text: PolarHVTM HiPerFET Power MOSFET ISOPLUS247TM IXFR 80N50P VDSS ID25 RDS on trr (Electrically Isolated Back Surface) = 500 V = 45 A ≤ 72 mΩ Ω ≤ 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS VDGR TJ = 25° C to 150° C


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    ISOPLUS247TM 80N50P 80n50 80N50P ISOPLUS247 4525 GE alize PDF

    80N50P

    Abstract: IXFN 80N50P E153432
    Text: IXFN 80N50P Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFN 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


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    80N50P 80N50P IXFN 80N50P E153432 PDF

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET Power MOSFET IXFN 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 500 500 V V VGS VGSM Transient Continuous


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    80N50P PDF

    80N50

    Abstract: 80N50P IXFN 80N50P
    Text: PolarHVTM HiPerFET Power MOSFET IXFN 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 500 500 V V VGS VGSM Transient Continuous


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    80N50P 80N50 80N50P IXFN 80N50P PDF

    80N50P

    Abstract: IXFK 80N50P 80N50 PLUS247
    Text: PolarHVTM HiPerFET Power MOSFET IXFK 80N50P IXFX 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 500 500 V V VGSM VGSM


    Original
    80N50P 80N50P IXFK 80N50P 80N50 PLUS247 PDF

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET Power MOSFET ISOPLUS247TM IXFR 80N50P VDSS ID25 RDS on trr (Electrically Isolated Back Surface) = 500 V = 45 A Ω ≤ 72 mΩ ≤ 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings


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    ISOPLUS247TM 80N50P PDF

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET Power MOSFET IXFK 80N50P IXFX 80N50P VDSS ID25 = 500 V = 80 A Ω ≤ 65 mΩ ≤ 200 ns RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C


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    80N50P PDF

    80N50P

    Abstract: ISOPLUS247 PLUS247
    Text: Preliminary Technical Information PolarHVTM HiPerFET Power MOSFET ISOPLUS247TM IXFR 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


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    ISOPLUS247TM 80N50P ISOPLUS247 E153432 405B2 80N50P ISOPLUS247 PLUS247 PDF

    Untitled

    Abstract: No abstract text available
    Text: IXFN 80N50P Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFN 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


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    80N50P OT-227 E153432 405B2 PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


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    MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 PDF

    STW20N60

    Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p
    Text: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal


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    O-220, ISOPLUS220TM, O-247, ISOPLUS247TM, O-264, ISOPLUS264TM. PLUS220 ISOPLUS220TM PLUS220SMD O-252 STW20N60 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p PDF