80N50P Search Results

80N50P Price and Stock

Filter by Manufacturer


Littelfuse Inc IXFN80N50P MOSFET N-CH 500V 66A SOT227B
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFN80N50P	Tube	2,956		1	1 $34.54 10 $25.548 100 $34.54 1000 $34.54 10000 $34.54	Buy Now
Newark	IXFN80N50P	Bulk	103		1	1 $38.57 10 $32.97 100 $30.71 1000 $30.71 10000 $30.71	Buy Now
RS	IXFN80N50P	Bulk		8 Weeks	10	1 - 10 $34.86 100 $34.86 1000 $34.86 10000 $34.86	Get Quote
Chip1Stop	IXFN80N50P	Tube	296			1 $24.7 10 $21.5 100 $19.4 1000 $19.4 10000 $19.4	Buy Now
Littelfuse Inc IXFX80N50P MOSFET N-CH 500V 80A PLUS247-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFX80N50P	Tube	30		300	1 - 10 - 100 - 1000 $14.126 10000 $14.126	Buy Now
Newark	IXFX80N50P	Bulk			300	1 - 10 - 100 - 1000 $21.2 10000 $21.2	Buy Now
Littelfuse Inc IXFK80N50P Discmosfetn-Ch Hiperfet-Polar To-264(3)/ Tube \|Littelfuse IXFK80N50P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	IXFK80N50P	Bulk			300	1 - 10 - 100 - 1000 $20.55 10000 $20.55	Buy Now
RS	IXFK80N50P	Bulk		8 Weeks	25	1 - 10 - 100 $21.19 1000 $21.19 10000 $21.19	Get Quote
Littelfuse Inc IXFR80N50P Discmosfetn-Ch Hiperfet-Polar Isoplus247/ Tube \|Littelfuse IXFR80N50P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	IXFR80N50P	Bulk			300	1 - 10 - 100 - 1000 $22.87 10000 $22.87	Buy Now
RS	IXFR80N50P	Bulk		8 Weeks	30	1 - 10 - 100 $23.58 1000 $23.58 10000 $23.58	Get Quote
IXYS Corporation IXFN80N50P MOSFET Modules 500V 80A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXFN80N50P		736			1 $30.15 10 $23.62 100 $22.53 1000 $22.53 10000 $22.53	Buy Now
TTI	IXFN80N50P	Tube			300	1 - 10 - 100 - 1000 $22.54 10000 $22.54	Buy Now
New Advantage Corporation	IXFN80N50P		681		1	1 - 10 - 100 $46.6 1000 $43.49 10000 $43.49	Buy Now

Find more 80N50P price and stock on Findchips.com

80N50P Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
80N50P Abstract: IXFK 80N50P PLUS247 Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFK 80N50P IXFX 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500 V = 80 A Ω < 65 mΩ < 200 ns TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings	Original	80N50P O-264 80N50P IXFK 80N50P PLUS247	PDF
Untitled Abstract: No abstract text available Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFK 80N50P IXFX 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500 V = 80 A Ω < 75 mΩ < 200 ns TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings	Original	80N50P 80N50P O-264 PLUS247	PDF
80n50 Abstract: 80N50P ISOPLUS247 4525 GE alize Text: PolarHVTM HiPerFET Power MOSFET ISOPLUS247TM IXFR 80N50P VDSS ID25 RDS on trr (Electrically Isolated Back Surface) = 500 V = 45 A ≤ 72 mΩ Ω ≤ 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS VDGR TJ = 25° C to 150° C	Original	ISOPLUS247TM 80N50P 80n50 80N50P ISOPLUS247 4525 GE alize	PDF
80N50P Abstract: IXFN 80N50P E153432 Text: IXFN 80N50P Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFN 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ	Original	80N50P 80N50P IXFN 80N50P E153432	PDF
Untitled Abstract: No abstract text available Text: PolarHVTM HiPerFET Power MOSFET IXFN 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 500 500 V V VGS VGSM Transient Continuous	Original	80N50P	PDF
80N50 Abstract: 80N50P IXFN 80N50P Text: PolarHVTM HiPerFET Power MOSFET IXFN 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 500 500 V V VGS VGSM Transient Continuous	Original	80N50P 80N50 80N50P IXFN 80N50P	PDF
80N50P Abstract: IXFK 80N50P 80N50 PLUS247 Text: PolarHVTM HiPerFET Power MOSFET IXFK 80N50P IXFX 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 500 500 V V VGSM VGSM	Original	80N50P 80N50P IXFK 80N50P 80N50 PLUS247	PDF
Untitled Abstract: No abstract text available Text: PolarHVTM HiPerFET Power MOSFET ISOPLUS247TM IXFR 80N50P VDSS ID25 RDS on trr (Electrically Isolated Back Surface) = 500 V = 45 A Ω ≤ 72 mΩ ≤ 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings	Original	ISOPLUS247TM 80N50P	PDF
Untitled Abstract: No abstract text available Text: PolarHVTM HiPerFET Power MOSFET IXFK 80N50P IXFX 80N50P VDSS ID25 = 500 V = 80 A Ω ≤ 65 mΩ ≤ 200 ns RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C	Original	80N50P	PDF
80N50P Abstract: ISOPLUS247 PLUS247 Text: Preliminary Technical Information PolarHVTM HiPerFET Power MOSFET ISOPLUS247TM IXFR 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ	Original	ISOPLUS247TM 80N50P ISOPLUS247 E153432 405B2 80N50P ISOPLUS247 PLUS247	PDF
Untitled Abstract: No abstract text available Text: IXFN 80N50P Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFN 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ	Original	80N50P OT-227 E153432 405B2	PDF
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2	PDF
STW20N60 Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p Text: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal	Original	O-220, ISOPLUS220TM, O-247, ISOPLUS247TM, O-264, ISOPLUS264TM. PLUS220 ISOPLUS220TM PLUS220SMD O-252 STW20N60 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p	PDF

Privacy Settings

80N50P Search Results

80N50P Price and Stock

Littelfuse Inc IXFN80N50P

Littelfuse Inc IXFX80N50P

Littelfuse Inc IXFK80N50P

Littelfuse Inc IXFR80N50P

IXYS Corporation IXFN80N50P

80N50P Datasheets Context Search

80N50P

Untitled

80n50

80N50P

Untitled

80N50

80N50P

Untitled

Untitled

80N50P

Untitled

7N60B equivalent

STW20N60