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Abstract: No abstract text available
Text: GS8321ZV18/32/36E-250/225/200/166/150/133 165-Bump FP-BGA Commercial Temp Industrial Temp 36Mb Pipelined and Flow Through Synchronous NBT SRAM Features • User-configurable Pipeline and Flow Through mode • NBT No Bus Turn Around functionality allows zero wait
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GS8321ZV18/32/36E-250/225/200/166/150/133
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PQ-32/CXA1571M/N
Abstract: No abstract text available
Text: GS8321Z18/32/36E-xxxV 165-Bump FP-BGA Commercial Temp Industrial Temp 36Mb Pipelined and Flow Through Synchronous NBT SRAM Features 250 MHz–133 MHz 1.8 V or 2.5 V VDD 1.8 V or 2.5 V I/O Because it is a synchronous device, address, data inputs, and read/ write control inputs are captured on the rising edge of the
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Untitled
Abstract: No abstract text available
Text: GS8321ZV18/32/36E-250/225/200/166/150/133 165-Bump FP-BGA Commercial Temp Industrial Temp 36Mb Pipelined and Flow Through Synchronous NBT SRAM Features • User-configurable Pipeline and Flow Through mode • NBT No Bus Turn Around functionality allows zero wait
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GS8321ZV18/32/36E-250/225/200/166/150/133
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Untitled
Abstract: No abstract text available
Text: GS8321Z18/32/36E-xxxV 165-Bump FP-BGA Commercial Temp Industrial Temp 36Mb Pipelined and Flow Through Synchronous NBT SRAM Features 250 MHz–133 MHz 1.8 V or 2.5 V VDD 1.8 V or 2.5 V I/O Because it is a synchronous device, address, data inputs, and read/ write control inputs are captured on the rising edge of the
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Untitled
Abstract: No abstract text available
Text: GS8321ZV18/32/36E-250/225/200/166/150/133 165-Bump FP-BGA Commercial Temp Industrial Temp 36Mb Pipelined and Flow Through Synchronous NBT SRAM Features 250 MHz–133 MHz 1.8 V VDD 1.8 V I/O Because it is a synchronous device, address, data inputs, and read/ write control inputs are captured on the rising edge of the
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GS8321ZV18E-133
Abstract: GS8321ZV18E-150 GS8321ZV18E-166 GS8321ZV18E-200 GS8321ZV18E-225
Text: GS8321ZV18/32/36E-250/225/200/166/150/133 165-Bump FP-BGA Commercial Temp Industrial Temp 36Mb Pipelined and Flow Through Synchronous NBT SRAM Features • User-configurable Pipeline and Flow Through mode • NBT No Bus Turn Around functionality allows zero wait
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GS8321ZV18E-150
GS8321ZV18E-166
GS8321ZV18E-200
GS8321ZV18E-225
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Untitled
Abstract: No abstract text available
Text: GS8321Z18/32/36E-xxxV 165-Bump FP-BGA Commercial Temp Industrial Temp 36Mb Pipelined and Flow Through Synchronous NBT SRAM Features 250 MHz–133 MHz 1.8 V or 2.5 V VDD 1.8 V or 2.5 V I/O Because it is a synchronous device, address, data inputs, and read/ write control inputs are captured on the rising edge of the
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GS8321ZV32E-225
Abstract: GS8321ZV18E-133 GS8321ZV18E-150 GS8321ZV18E-166 GS8321ZV18E-200 GS8321ZV18E-225
Text: GS8321ZV18/32/36E-250/225/200/166/150/133 165-Bump FP-BGA Commercial Temp Industrial Temp 36Mb Pipelined and Flow Through Synchronous NBT SRAM Features 250 MHz–133 MHz 1.8 V VDD 1.8 V I/O Because it is a synchronous device, address, data inputs, and read/ write control inputs are captured on the rising edge of the
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GS8321ZV18E-150
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GS8321ZV18E-200
GS8321ZV18E-225
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Untitled
Abstract: No abstract text available
Text: GS8321Z18/32/36E-xxxV 165-Bump FP-BGA Commercial Temp Industrial Temp 36Mb Pipelined and Flow Through Synchronous NBT SRAM Features 250 MHz–133 MHz 1.8 V or 2.5 V VDD 1.8 V or 2.5 V I/O Because it is a synchronous device, address, data inputs, and read/ write control inputs are captured on the rising edge of the
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GS8321Z32E-133V
Abstract: 8321ZXX_V
Text: GS8321Z18/32/36E-xxxV 165-Bump FP-BGA Commercial Temp Industrial Temp 36Mb Pipelined and Flow Through Synchronous NBT SRAM Features 250 MHz–133 MHz 1.8 V or 2.5 V VDD 1.8 V or 2.5 V I/O Because it is a synchronous device, address, data inputs, and read/ write control inputs are captured on the rising edge of the
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