145GHz
Abstract: No abstract text available
Text: 8507FP 4W Power Amplifier 14 - 14.5 GHz Advanced Information FEATURES •= •= •= •= 20% Typical Power Added Efficiency High Linear Gain: 17 dB typical 50 Ω Input/Output Impedance Self-Aligned MSAG MESFET Process N/C GND GND N/C MA0 8507FP RFIN
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gsat
Abstract: GaAs MESFET ITT
Text: 4W Power Amplifier 12.5 – 14.5 GHz ITT8507 FN / FP ADVANCED INFORMATION FEATURES • • • • 20% Typical Power Added Efficiency High Linear Gain: 17 dB typical 50 Ω Input/Output Impedance Self-Aligned MSAG MESFET Process VDD N/C VDD N/C ITT 8507FN
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GaAs MESFET ITT
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Untitled
Abstract: No abstract text available
Text: 4W Power Amplifier 12.5 – 14.5 GHz ITT8507 ADVANCED INFORMATION FEATURES • • • • 20% Typical Power Added Efficiency High Linear Gain: 17 dB typical 50 Ω Input/Output Impedance Self-Aligned MSAG MESFET Process VDD N/C VDD N/C ITT 8507FN RFIN
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