Untitled
Abstract: No abstract text available
Text: AIT Components Ltd Surface Mount 3D Transponder Coils GSAT-3D15 Series Features: Low Profile Surface Mount Wire Wound Construction High Q Value Operating Temperature -40 to +850C Main Applications: Asset Management Tracking Access Control Tyre Pressure Monitoring TPMS
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GSAT-3D15
GSAT3D15-242J
GSAT3D15-252J
GSAT3D15-342J
GSAT3D15-402J
GSAT3D15-472J
GSAT3D15-492J
GSAT3D15-722J
GSAT3D15-103J
GSAT3D15
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gsat 12 in sensors
Abstract: MMA6222AKEG txy capacitor capacitor 475A 20-PIN AEC-Q100 airbag crash sensor dsp airbag MMA6
Text: MMA6222AKEG Rev 0, 12/2009 Freescale Semiconductor Technical Data Analog Dual Axis Micromachined Accelerometer MMA6222AKEG MMA6255AKEG MMA621010AKEG The MMA62XXAKEG series of dual axis X and Y silicon capacitive, micromachined accelerometers features a full digital signal processing for
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MMA6222AKEG
MMA6255AKEG
MMA621010AKEG
MMA62XXAKEG
20/20g,
50/50g,
100/100g
gsat 12 in sensors
MMA6222AKEG
txy capacitor
capacitor 475A
20-PIN
AEC-Q100
airbag crash sensor dsp
airbag
MMA6
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10W Power Amplifier
Abstract: ITT338509D 6 ghz amplifier 10w
Text: 10W Power Amplifier Die 8.0 – 11.0 GHz ITT338509D FEATURES • • • • ADVANCED INFORMATION Three Stage Single-ended High Power Amplifier Broadband Performance 35% Typical Power Added Efficiency 50 Ω Input/Output Impedance Self-Aligned MSAG MESFET Process
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ITT338509D
ITT338509D
10W Power Amplifier
6 ghz amplifier 10w
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145GHz
Abstract: No abstract text available
Text: MA08507FP 4W Power Amplifier 14 - 14.5 GHz Advanced Information FEATURES •= •= •= •= 20% Typical Power Added Efficiency High Linear Gain: 17 dB typical 50 Ω Input/Output Impedance Self-Aligned MSAG MESFET Process N/C GND GND N/C MA0 8507FP RFIN
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MA08507FP
8507FP
MA08507FP
145GHz
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MA08506D
Abstract: No abstract text available
Text: MA08506D 8W Power Amplifier Die 9.5 - 10.5 GHz Advanced Information Features •= •= VDD VDD 38% Typical Power Added Efficiency 50 Ω Input/Output Impedance •= Self-Aligned MSAG MESFET Process RF IN RF OUT VGG Functional Schematic Description Maximum Ratings (T
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MA08506D
MA08506D
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8602FN
Abstract: MA08602FN ku vsat amplifier 8602F
Text: MA08602FN 1W Power Amplifier 12 - 16 GHz FEATURES •= •= •= •= •= •= 35.5 dB Typical Small Signal Gain 50 Ω Input/Output Impedance 40 dBm Third Order Intercept Point Flange mount package designed for optimum electrical and thermal performance at Ku-band.
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MA08602FN
8602FN
MA08602FN
8602FN
ku vsat amplifier
8602F
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A004R
Abstract: MGA-545P8 MGA-545P8-BLK MGA-545P8-TR1 MGA-545P8-TR2 MO229 51C MARKING code
Text: Agilent MGA-545P8 50 MHz to 7 GHz Medium Power Amplifier Data Sheet Description Agilent’s MGA-545P8 is an economical, low current, medium power, easy-to-use GaAs MMIC amplifier that offers excellent power output at 5.8 GHz. Although optimized for 5.8 GHz applications,
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MGA-545P8
MGA-545P8
5988-9629EN
5989-1810EN
A004R
MGA-545P8-BLK
MGA-545P8-TR1
MGA-545P8-TR2
MO229
51C MARKING code
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EX-219
Abstract: OX-249
Text: Space Products Helping Customers Innovate, Improve & Grow Space p Products Hi-Reliability Hi-Reliabili Crystals & Oscillators XTAL - Quartz Crystals XO - Clock Oscillators VCXO - Voltage Controlled Crystal Oscillators TCXO - Temperature Compensated Crystal Oscillators
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D-74924
D-14513
EX-219
OX-249
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ITT S11
Abstract: No abstract text available
Text: 1W Power Amplifier 12 - 16 GHz ITT8602FN PRELIMINARY FEATURES • • • • • • 35.5 dB Typical Small Signal Gain 50 Ω Input/Output Impedance 40 dBm Third Order Intercept Point Flange mount package designed for optimum electrical and thermal performance at Ku-band.
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ITT8602FN
8602FN
ITT8602FN
ITT S11
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gsat
Abstract: No abstract text available
Text: 6W Power Amplifier 5.5 – 7.0 GHz ITT8404 FN/FP ADVANCED INFORMATION FEATURES • • • • 30% Typical Power Added Efficiency High Linear Gain: 16 dB typical 50 Ω Input/Output Impedance Self-Aligned MSAG MESFET Process VDD N/C VDD N/C ITT 8404FN
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ITT8404
8404FN
8404FP
gsat
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gsat
Abstract: GaAs MESFET ITT
Text: 4W Power Amplifier 12.5 – 14.5 GHz ITT8507 FN / FP ADVANCED INFORMATION FEATURES • • • • 20% Typical Power Added Efficiency High Linear Gain: 17 dB typical 50 Ω Input/Output Impedance Self-Aligned MSAG MESFET Process VDD N/C VDD N/C ITT 8507FN
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ITT8507
8507FN
8507FP
gsat
GaAs MESFET ITT
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CXD1272Q
Abstract: CXD1272R audio compressor expander IC 8 pin one band compander circuit application
Text: CXD1272Q/R Cellular Phone Filter LSI with On-Chip Compandor Description The CXD1272Q/R is a filter LSI for cellular phones. Successor to the CXD1271Q/R, this device features an on-chip compandor a new function. Furthermore, addition of an attenuator for digital control provides
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CXD1272Q/R
CXD1272Q/R
CXD1271Q/R,
CXD1270Q/R,
QFP-80P-L01
QFP080-P-1420
42/COPPER
CXD1272R
80PIN
LQFP-80P-L01
CXD1272Q
CXD1272R
audio compressor expander IC 8 pin
one band compander circuit application
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IC TDA 8893 circuit diagram
Abstract: one chip tv ic 8893 IC TDA 8893 TDA 8893 8893 single chip tv processor Microcontroller AT89C2051 pin diagram tda 8172 equivalent TDA 4935 so do ic tda 8893 tda 8172
Text: U4930B Single Chip TV Baseband Processor Description The U4930B is an alignment-free, I2C-bus controlled TV baseband processor that has been designed for use with the baseband delay line U3665M and the SECAM decoder U4935B. The IC includes a multiple video-input selector switch,
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U4930B
U4930B
U3665M
U4935B.
U4935B
D-74025
28-Jan-97
IC TDA 8893 circuit diagram
one chip tv ic 8893
IC TDA 8893
TDA 8893
8893 single chip tv processor
Microcontroller AT89C2051 pin diagram
tda 8172 equivalent
TDA 4935
so do ic tda 8893
tda 8172
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AA026P2-00
Abstract: No abstract text available
Text: 23.5–26.5 GHz GaAs MMIC Power Amplifier AA026P2-00 Features Chip Outline • Single Bias Supply Operation 6 V 3.080 ■ 17 dB Typical Small Signal Gain 2.960 ■ 24 dBm Typical P1 dB Output Power at 26.5 GHz 2.068 ■ 100% On-Wafer RF and DC Testing ■ 100% Visual Inspection to MIL-STD
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AA026P2-00
11/02A
AA026P2-00
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vanguard tcxo
Abstract: TCXO vanguard COSMO 1010 mccoy M55310 cosmo 1008 OCXO piezo c1555 MIL-PRF-55310 TCXO mtbf PX-369
Text: Space Products Space Products Vectron International Helping Customers Innovate, Improve & Grow World-Wide Locations United States VI Hudson, Corporate Headquarters 267 Lowell Road Hudson, NH 03051 Tel: 1.888.328.7661 Fax: 1.888.329.8328 * Military/Space Center of
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D-74924
D-14513
vanguard tcxo
TCXO vanguard
COSMO 1010
mccoy M55310
cosmo 1008
OCXO piezo
c1555
MIL-PRF-55310
TCXO mtbf
PX-369
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Untitled
Abstract: No abstract text available
Text: 21–23 GHz GaAs MMIC Medium Power Amplifier AA022P2-00 • Single Bias Supply Operation 6 V ■ 22 dBm Typical P1 dB Output Power at 23 GHz 3.268 Chip Outline 0.571 Features 1.700 1.572 1.576 ■ 14 dB Typical Small Signal Gain RF IN 0.850 ■ 0.25 µm Ti/Pd/Au Gates
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AA022P2-00
MIL-STD-883
11/02A
AA022P2-00
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Untitled
Abstract: No abstract text available
Text: 4W Power Amplifier 12.5 – 14.5 GHz ITT8507 ADVANCED INFORMATION FEATURES • • • • 20% Typical Power Added Efficiency High Linear Gain: 17 dB typical 50 Ω Input/Output Impedance Self-Aligned MSAG MESFET Process VDD N/C VDD N/C ITT 8507FN RFIN
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ITT8507
8507FN
8507FP
ITT8507
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Mobile AMD-K6-II
Abstract: AMD K6
Text: Preliminary Information AMDJ1 Mobile AMD-K6 Processor Data Sheet Publication # 2 1 0 4 9 Rev: H Issue Date: September 1998 Amendment T his docum ent contains in fo rm atio n on a p ro d u ct u n d e r developm ent a t A dvanced Micro D evices AMD . The in fo rm atio n is in te n d e d to help you e v alu a te this pro d u ct. AMD r e
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2i049H/0-Septem
Mobile AMD-K6-II
AMD K6
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Untitled
Abstract: No abstract text available
Text: ËSAlph 37-40 GHz GaAs MMIC Amplifier AA038P1-00 Chip Layout Features • Broad Coverage of K a-B and ■ 14 dB Small Signal Gain ■ 18 dBm Output Power at P 1dB at 38 G H z ■ Dual Drain Bias ■ 0.25 urn Ti/Pt/Au Gates ■ Passivated Surface Electrical Specifications at 25°C
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AA038P1-00
AK006L1-01
AS004M2-11
AT002N5-00
AK006L1-10
AS004R2-08
AT002N5-01
AK006M1-00
AS004R2-11
AT002N5-10
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TA 7136 p
Abstract: ICL7136CPL ICL7136CQH ICL7136 ICL7136CMH
Text: 19-0951; Rev 2; 9/96 JW Æ X A JV X Low Power, 316 Digit A /D Converter Versatility and accuracy are inherent features of this con verter. The dual-slope conversion technique automatical ly rejects interference signals common in industrial envi ronments. The true differential input and reference are
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ICL7136
1CL7136
TA 7136 p
ICL7136CPL
ICL7136CQH
ICL7136CMH
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lola
Abstract: TUBE 1625
Text: Single Mode WDM 1550nm / 1625 nm Perform ance Specification 1550/1625 nm P r e m iu m U ltra Bandpass Sta n d a rd 1550 and 1650nm ± 5nm Operating Temperature -40'C to +85 'C Storage Temperature -40 "C to + 8 5 6C Directivity >60dB 1X2 Reflectance >65dB 2X2
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1550nm
1550and1650nm
000HZ
12hrs
lola
TUBE 1625
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0257S2
Abstract: No abstract text available
Text: AMD-K6-III Processor Data Sheet AMD Z\ D i 02575E5 QDLBE72 41fl B 1999 Advanced Micro Devices, Inc. A ll rig h ts reserv ed . The contents of this docum ent are provided in connection w ith A dvanced Micro D evices, Inc. "AMD" products. AMD m akes no representations or w arranties w ith
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02575E5
QDLBE72
D257525
21918B/0-October
00bfl5li7
0257S2
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bdmr4101
Abstract: ev4101 tr4101
Text: LOGIC Tiny RISC EZ4102 EasyMACRO Microprocessor P relim inary Datasheet The TinyRISC™ EZ4102 EasyMACRO subsystem is a compact, highperformance, 32-bit MIPS microprocessor subsystem implemented in LSI Logic’s G11™ technology. The EZ4102 combines the TinyRISC CPU
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EZ4102
EZ4102
32-bit
TR4101
bdmr4101
ev4101
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41264
Abstract: 58779
Text: 20 -24 G H z G a A s M M IC Pow er Am plifier AA022P1-00 Features Chip Layout • Single Bias Supply Operation +6V ■ Broad Coverage of K -B and ■ 15 dB Small Signal Gain ■ 25.5 dBm Saturated Output Power at 23 G H z ■ 18% Power Added Efficiency at 23 GHz
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AA022P1-00
41264
58779
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