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Littelfuse Inc IXFK78N50P3 MOSFET N-CH 500V 78A TO264AA
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DigiKey	IXFK78N50P3	Tube	300		1	1 $20.73 10 $20.73 100 $20.73 1000 $20.73 10000 $20.73	Buy Now
RS	IXFK78N50P3	Bulk		8 Weeks	25	1 - 10 - 100 $21.27 1000 $21.27 10000 $21.27	Get Quote
Littelfuse Inc IXFX98N50P3 MOSFET N-CH 500V 98A PLUS247-3
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DigiKey	IXFX98N50P3	Tube	64		1	1 $14.36 10 $14.36 100 $11.50533 1000 $11.50533 10000 $11.50533	Buy Now
IXYS Corporation IXTP8N50P MOSFET N-CH 500V 8A TO220AB
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Bristol Electronics	IXTP8N50P		190			1 - 10 - 100 - 1000 - 10000 -	Get Quote
IXYS Corporation IXTA8N50P MOSFET N-CH 500V 8A TO263
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DigiKey	IXTA8N50P	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
IXYS Corporation IXTP8N50PM MOSFET N-CH 500V 4A TO220AB
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DigiKey	IXTP8N50PM	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now

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8N50P Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
8N50P Abstract: No abstract text available Text: Advance Technical Information PolarHVTM Power MOSFET IXTA 8N50P IXTP 8N50P VDSS ID25 RDS on = 500 = 8 = 0.8 V A Ω N-Channel Enhancement Mode Avalanche Energy Rated Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ	Original	8N50P O-263 O-220 O-263 O-220) 8N50P	PDF
8N50P Abstract: T8N50 t8n50p 8n50 IXTA8N50P Text: PolarHVTM Power MOSFET IXTA 8N50P IXTP 8N50P VDSS ID25 RDS on = 500 = 8 ≤ 0.8 V A Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ VGS VGSM Maximum Ratings Continuous	Original	8N50P O-220 O-263 O-220) 3-21-06-A 8N50P T8N50 t8n50p 8n50 IXTA8N50P	PDF
Untitled Abstract: No abstract text available Text: Preliminary Technical Information PolarHVTMHiPerFET Power MOSFET IXFP 8N50PM VDSS ID25 RDS on (Electrically Isolated Tab) trr = 500 V = 4.4 A Ω ≤ 0.8 ≤ 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings	Original	8N50PM 405B2	PDF
IXTP8N50PM Abstract: No abstract text available Text: Preliminary Technical Information PolarHVTM Power MOSFET IXTP 8N50PM VDSS ID25 RDS on (Electrically Isolated Tab) = 500 = 4 ≤ 0.8 V A Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C	Original	8N50PM 405B2 IXTP8N50PM	PDF
T8N50 Abstract: No abstract text available Text: PolarHVTM Power MOSFET IXTA 8N50P IXTP 8N50P VDSS ID25 RDS on = 500 = 8 ≤ 0.8 V A Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ VGS VGSM Maximum Ratings Continuous	Original	8N50P O-263 O-220 3-21-06-A T8N50	PDF
Untitled Abstract: No abstract text available Text: Preliminary Technical Information PolarHVTM Power MOSFET IXTP 8N50PM VDSS ID25 RDS on (Electrically Isolated Tab) = 500 = 4 ≤ 0.8 V A Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ	Original	8N50PM 405B2	PDF
IXTA8N50P Abstract: MOSFET IXYS TO-263 Text: Advance Technical Information PolarHVTM Power MOSFET IXTA 8N50P IXTP 8N50P VDSS ID25 RDS on = 500 = 8 = 0.8 V A Ω N-Channel Enhancement Mode Avalanche Energy Rated Symbol Test Conditions VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ	Original	8N50P 8N50P O-220 O-263 405B2 IXTA8N50P MOSFET IXYS TO-263	PDF
8N50PM Abstract: 8N50P Text: Preliminary Technical Information PolarHVTMHiPerFET Power MOSFET IXFP 8N50PM VDSS ID25 RDS on (Electrically Isolated Tab) trr = 500 V = 4.4 A ≤ 0.8 Ω ≤ 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings	Original	8N50PM 405B2 8N50PM 8N50P	PDF
2n60p Abstract: gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P Text: 2005 / 1 IXYS NEWS MSC IGBT Module Line to include Economical Small 6Pack Incorporating Latest NPT3 and Trench IGBT Technologies IXYS announced that in keeping up with ambitious growth plans in the IGBT market, its European Operation, a leader in Direct Copper Bond	Original	IXFR48N60P 18N60P 30N60P 22N60P 36N60P 26N60P 48N60P PLUS220 IXTV22N50PS. 2n60p gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P	PDF
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2	PDF
STW20N60 Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p Text: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal	Original	O-220, ISOPLUS220TM, O-247, ISOPLUS247TM, O-264, ISOPLUS264TM. PLUS220 ISOPLUS220TM PLUS220SMD O-252 STW20N60 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p	PDF