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    8N50P Search Results

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    8N50P Price and Stock

    Littelfuse Inc IXFK78N50P3

    MOSFET N-CH 500V 78A TO264AA
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    DigiKey IXFK78N50P3 Tube 300 1
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    RS IXFK78N50P3 Bulk 8 Weeks 25
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    Littelfuse Inc IXFX98N50P3

    MOSFET N-CH 500V 98A PLUS247-3
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    DigiKey IXFX98N50P3 Tube 64 1
    • 1 $14.36
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    IXYS Corporation IXTP8N50P

    MOSFET N-CH 500V 8A TO220AB
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    Bristol Electronics IXTP8N50P 190
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    IXYS Corporation IXTA8N50P

    MOSFET N-CH 500V 8A TO263
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    IXYS Corporation IXTP8N50PM

    MOSFET N-CH 500V 4A TO220AB
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    8N50P Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    8N50P

    Abstract: No abstract text available
    Text: Advance Technical Information PolarHVTM Power MOSFET IXTA 8N50P IXTP 8N50P VDSS ID25 RDS on = 500 = 8 = 0.8 V A Ω N-Channel Enhancement Mode Avalanche Energy Rated Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		8N50P O-263 O-220 O-263 O-220) 8N50P PDF

    8N50P

    Abstract: T8N50 t8n50p 8n50 IXTA8N50P
    Text: PolarHVTM Power MOSFET IXTA 8N50P IXTP 8N50P VDSS ID25 RDS on = 500 = 8 ≤ 0.8 V A Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ VGS VGSM Maximum Ratings Continuous


    Original     		8N50P O-220 O-263 O-220) 3-21-06-A 8N50P T8N50 t8n50p 8n50 IXTA8N50P PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information PolarHVTMHiPerFET Power MOSFET IXFP 8N50PM VDSS ID25 RDS on (Electrically Isolated Tab) trr = 500 V = 4.4 A Ω ≤ 0.8 ≤ 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings


    Original     		8N50PM 405B2 PDF

    IXTP8N50PM

    Abstract: No abstract text available
    Text: Preliminary Technical Information PolarHVTM Power MOSFET IXTP 8N50PM VDSS ID25 RDS on (Electrically Isolated Tab) = 500 = 4 ≤ 0.8 V A Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C


    Original     		8N50PM 405B2 IXTP8N50PM PDF

    T8N50

    Abstract: No abstract text available
    Text: PolarHVTM Power MOSFET IXTA 8N50P IXTP 8N50P VDSS ID25 RDS on = 500 = 8 ≤ 0.8 V A Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ VGS VGSM Maximum Ratings Continuous


    Original     		8N50P O-263 O-220 3-21-06-A T8N50 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information PolarHVTM Power MOSFET IXTP 8N50PM VDSS ID25 RDS on (Electrically Isolated Tab) = 500 = 4 ≤ 0.8 V A Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ


    Original     		8N50PM 405B2 PDF

    IXTA8N50P

    Abstract: MOSFET IXYS TO-263
    Text: Advance Technical Information PolarHVTM Power MOSFET IXTA 8N50P IXTP 8N50P VDSS ID25 RDS on = 500 = 8 = 0.8 V A Ω N-Channel Enhancement Mode Avalanche Energy Rated Symbol Test Conditions VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		8N50P 8N50P O-220 O-263 405B2 IXTA8N50P MOSFET IXYS TO-263 PDF

    8N50PM

    Abstract: 8N50P
    Text: Preliminary Technical Information PolarHVTMHiPerFET Power MOSFET IXFP 8N50PM VDSS ID25 RDS on (Electrically Isolated Tab) trr = 500 V = 4.4 A ≤ 0.8 Ω ≤ 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings


    Original     		8N50PM 405B2 8N50PM 8N50P PDF

    2n60p

    Abstract: gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P
    Text: 2005 / 1 IXYS NEWS MSC IGBT Module Line to include Economical Small 6Pack Incorporating Latest NPT3 and Trench IGBT Technologies IXYS announced that in keeping up with ambitious growth plans in the IGBT market, its European Operation, a leader in Direct Copper Bond


    Original     		IXFR48N60P 18N60P 30N60P 22N60P 36N60P 26N60P 48N60P PLUS220 IXTV22N50PS. 2n60p gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 PDF

    STW20N60

    Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p
    Text: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal


    Original     		O-220, ISOPLUS220TM, O-247, ISOPLUS247TM, O-264, ISOPLUS264TM. PLUS220 ISOPLUS220TM PLUS220SMD O-252 STW20N60 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p PDF