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    8X11MM Price and Stock

    Panasonic Electronic Components EEU-FR1A681

    Aluminum Electrolytic Capacitors - Radial Leaded 10VDC 680uF 8x11mm LS3.5mm
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI EEU-FR1A681 Bulk 8,600 200
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    • 1000 $0.13
    • 10000 $0.13
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    Panasonic Electronic Components EEU-FR1H101B

    Aluminum Electrolytic Capacitors - Radial Leaded 50VDC 100uF 8x11mm LS 5.0mm
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI EEU-FR1H101B Ammo Pack 7,000 1,000
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    • 1000 $0.132
    • 10000 $0.122
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    Panasonic Electronic Components EEU-FR1C471

    Aluminum Electrolytic Capacitors - Radial Leaded 16VDC 470uF 8x11mm LS3.5mm
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI EEU-FR1C471 Bulk 5,100 100
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    • 1000 $0.135
    • 10000 $0.128
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    Panasonic Electronic Components EEU-FR1C471B

    Aluminum Electrolytic Capacitors - Radial Leaded 16VDC 470uF 8x11mm LS 5.0mm
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI EEU-FR1C471B Ammo Pack 5,000 1,000
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    • 1000 $0.14
    • 10000 $0.129
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    Panasonic Electronic Components EEU-FR0J821

    Aluminum Electrolytic Capacitors - Radial Leaded 6.3VDC 820uF 8x11mm LS3.5mm
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI EEU-FR0J821 Bulk 4,000 100
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    • 100 $0.205
    • 1000 $0.15
    • 10000 $0.128
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    Find more 8X11MM price and stock on Findchips.com

    8X11MM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    07N65

    Abstract: fusible 1a SMD LN4148 10471 VARISTOR
    Text: Innovative Green Power Solutions AC/DC Charger/Adapter Reference Designs ACT51X Rev 1.5 Oct 2012 -1- www.active-semi.com High Performance AC/DC Switching Power Solutions Application Change Note Revision History Page 4,6,8,10,12,14,16,18,20,22,24 2012-Oct– 19


    Original     		PDF ACT51X 2012-Octâ ACT512 PC817C -26For 07N65 fusible 1a SMD LN4148 10471 VARISTOR

    SA62S

    Abstract: 2SA25 A00F
    Text: Preliminary W19B320AT/B Data Sheet 4M x 8/2M × 16 BITS 3V FLEXIBLE BANK FLASH MEMORY Table of Contents1. GENERAL DESCRIPTION . 3 2. FEATURES . 3


    Original     		PDF W19B320AT/B SA62S 2SA25 A00F

    EN5394

    Abstract: EN5394QI TAIYO soldermask Stabilizing Feedback Control Loops venable J-STD-020A EN5364 GRM21BR60J106KE19L TRANSISTOR C 6090 GRM31CR71A106KA01L LMK316B7106KL-T
    Text: EN5394QI Feature Rich 9A Voltage Mode Synchronous Buck PWM DC-DC Converter with Integrated Inductor RoHS Compliant - Halogen Free Description Typical Application Circuit The EN5394QI is a Power Supply on a Chip PwrSoC DC to DC converter with integrated inductor, PWM controller, MOSFETS, and


    Original     		PDF EN5394QI EN5394QI EN5394QIs EN5394QIs 2x47F EN5394 TAIYO soldermask Stabilizing Feedback Control Loops venable J-STD-020A EN5364 GRM21BR60J106KE19L TRANSISTOR C 6090 GRM31CR71A106KA01L LMK316B7106KL-T

    M69KB096AB

    Abstract: PSRAM M36P0R9060E0 M58PR512J
    Text: M36P0R9060E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package PRELIMINARY DATA Features summary • ■ ■ ■ Multi-chip package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash memory


    Original     		PDF M36P0R9060E0 108MHz, 66MHz TFBGA10thout M69KB096AB PSRAM M36P0R9060E0 M58PR512J

    TC55VCM416BTGN55

    Abstract: TC55VCM416BSGN TC55VCM416BTGN TC55YCM416BSGN TC55VCM416BSGN55 TC55VEM416BXGN55 TSOP48-P-1220-0
    Text: TC55VCM416BTGN, TC55VCM416BSGN, TC55VEM416BXGN55 TC55YCM416BTGN, TC55YCM416BSGN, TC55YEM416BXGN70 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS Lead-Free 1,048,576-WORD BY 16-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55VCM416B, TC55VEM416B, TC55YCM416B and TC55YEM416B is a 16,777,216-bit static random


    Original     		PDF TC55VCM416BTGN, TC55VCM416BSGN, TC55VEM416BXGN55 TC55YCM416BTGN, TC55YCM416BSGN, TC55YEM416BXGN70 576-WORD 16-BIT TC55VCM416B, TC55VEM416B, TC55VCM416BTGN55 TC55VCM416BSGN TC55VCM416BTGN TC55YCM416BSGN TC55VCM416BSGN55 TC55VEM416BXGN55 TSOP48-P-1220-0

    EN5394

    Abstract: EN5394QI TAIYO soldermask ocp_adj Information Enpirion en5394qi
    Text: EN5394QI Feature Rich 9A Voltage Mode Synchronous Buck PWM DC-DC Converter with Integrated Inductor RoHS Compliant - Halogen Free Typical Application Circuit Description The EN5394QI is a Power Supply on a Chip PwrSoC DC to DC converter with integrated inductor, PWM controller, MOSFETS, and


    Original     		PDF EN5394QI EN5394QI EN5394QIs EN5394 TAIYO soldermask ocp_adj Information Enpirion en5394qi

    BA512

    Abstract: ba469 BA516 BA508 BA323 BA340 BA476 BA507 BA312 BA379
    Text: K8S5615ET B A NOR FLASH MEMORY Document Title 256M Bit (16M x16) Muxed Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Preliminary February 4, 2004 Preliminary 0.1 Revision - Correct Device ID of Table 9 from 22F8h to 22FEh


    Original     		PDF K8S5615ET 22F8h 22FEh 54MHz 66MHz 270sec 240sec 256Byte 00003FH 00007FH BA512 ba469 BA516 BA508 BA323 BA340 BA476 BA507 BA312 BA379

    PSRAM

    Abstract: M36P0R9060E0 M58PR512J M69KB096AM M58PRxxxJ
    Text: M36P0R9060E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash memory 64 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package Feature summary • ■ Multi-Chip Package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash memory


    Original     		PDF M36P0R9060E0 TFBGA107 108MHz, 66MHz PSRAM M36P0R9060E0 M58PR512J M69KB096AM M58PRxxxJ

    TC55VCM416BTGN55

    Abstract: TC55VCM416BTGN tba 810 TC55VCM416BSGN TC55YCM416BSGN
    Text: TC55VCM416BTGN, TC55VCM416BSGN, TC55VEM416BXGN55 TC55YCM416BTGN, TC55YCM416BSGN, TC55YEM416BXGN70 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS Lead-Free 1,048,576-WORD BY 16-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55VCM416B, TC55VEM416B, TC55YCM416B and TC55YEM416B is a 16,777,216-bit static random


    Original     		PDF TC55VCM416BTGN, TC55VCM416BSGN, TC55VEM416BXGN55 TC55YCM416BTGN, TC55YCM416BSGN, TC55YEM416BXGN70 576-WORD 16-BIT TC55VCM416B, TC55VEM416B, TC55VCM416BTGN55 TC55VCM416BTGN tba 810 TC55VCM416BSGN TC55YCM416BSGN

    10000uF capacitor electrolytic

    Abstract: 10000uf, 63v electrolytic capacitor 10000uf, 16v electrolytic capacitor 10000uf 16v 10000uF capacitor 100uF 16V Electrolytic Capacitor 20 uf 100V electrolytic capacitor 1000UF 100UF 10UF
    Text: File No.: Version: Page: Date: SYNTON-TECH CORPORATION ALUMINUM ELECTROLYTIC CAPACITORS E/C-02 A 1/15 2010.01.01 z Explanations Of Ordering Code DESCRIPTION : E/C 100UF 20% SYNTON CODE : E/C Series Capacitance Aluminum Electrolytic Capacitors value 101 Tolerance


    Original     		PDF E/C-02 100UF 100UF 1000UF 10000UF 8X11mm 10000uF capacitor electrolytic 10000uf, 63v electrolytic capacitor 10000uf, 16v electrolytic capacitor 10000uf 16v 10000uF capacitor 100uF 16V Electrolytic Capacitor 20 uf 100V electrolytic capacitor 1000UF 10UF

    Untitled

    Abstract: No abstract text available
    Text: Enpirion Power Datasheet EN5394QI 9A PowerSoC Voltage Mode Synchronous Buck PWM DC-DC Converter With Integrated Inductor Description Typical Application Circuit The EN5394QI is a Power Supply on a Chip PwrSoC DC to DC converter with integrated inductor, PWM controller, MOSFETS, and


    Original     		PDF EN5394QI EN5394QIs EN5394QIs

    TC55VCM416BTGN55

    Abstract: TC55VCM416BTGN40 TC55VCM416BTGN TC55VCM416BSGN TC55VEM416BXGN40 TC55YCM416BSGN TC55YEM416BXGN55
    Text: TC55VCM416BTGN, TC55VCM416BSGN, TC55VEM416BXGN40,55 TC55YCM416BTGN, TC55YCM416BSGN, TC55YEM416BXGN55,70 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS Lead-Free 1,048,576-WORD BY 16-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55VCM416B, TC55VEM416B, TC55YCM416B and TC55YEM416B is a 16,777,216-bit static random


    Original     		PDF TC55VCM416BTGN, TC55VCM416BSGN, TC55VEM416BXGN40 TC55YCM416BTGN, TC55YCM416BSGN, TC55YEM416BXGN55 576-WORD 16-BIT TC55VCM416B, TC55VEM416B, TC55VCM416BTGN55 TC55VCM416BTGN40 TC55VCM416BTGN TC55VCM416BSGN TC55YCM416BSGN

    L24002

    Abstract: NAND "read disturb" 1GB Toshiba 512 NAND MLC FLASH BGA PC133 registered reference design CMOS 0.8mm process cross Lithium battery CR2025 sony M2V28S30AVP M5M51008CFP
    Text: Future On Chips MITSUBISHI SEMICONDUCTORS MITSUBISHI ELECTRIC CORPORATION ULSI Memory Memory Series Series ULSI RAM/MCP/FLASH New Data Package http://www.mitsubishichips.com Jul. 2000 MITSUBISHI ELECTRIC L-11002-01 CONTENTS General Business Operation Network and Production Facilities


    Original     		PDF L-11002-01 64MDRAM 64MSDRAM 128MSDRAM 256MSDRAM 144MRDRAM L24002 NAND "read disturb" 1GB Toshiba 512 NAND MLC FLASH BGA PC133 registered reference design CMOS 0.8mm process cross Lithium battery CR2025 sony M2V28S30AVP M5M51008CFP

    PSRAM

    Abstract: M36P0R9070E0 M58PR512J M69KB128AA
    Text: M36P0R9070E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash Memory 128 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package PRELIMINARY DATA Features summary • ■ ■ ■ Multi-chip package – 1die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash Memory


    Original     		PDF M36P0R9070E0 128Mbit TFBGA107 2112-bit 64-bit PSRAM M36P0R9070E0 M58PR512J M69KB128AA

    Untitled

    Abstract: No abstract text available
    Text: Advance Information W19B32XMT/B 4M x 8/2M × 16 3V DUAL BANK FLASH MEMORY GENERAL DESCRIPTION The W19B32XMT/B is a 32Mbit, 2.7~3.6 volt dual bank CMOS flash memory organized as 4M × 8 or 2M × 16 bits. The word-wide × 16 data appears on DQ15-DQ0, and byte-wide (× 8)


    Original     		PDF W19B32XMT/B W19B32XMT/B 32Mbit, DQ15-DQ0, 12-volt

    EN5394QI

    Abstract: 15nf EN5394 Information Enpirion en5394qi SYDC
    Text: EN5394QI Feature Rich 9A Voltage Mode Synchronous Buck PWM DC-DC Converter with Integrated Inductor RoHS Compliant - Halogen Free Description Typical Application Circuit The EN5394QI is a Power Supply on a Chip PwrSoC DC to DC converter with integrated inductor, PWM controller, MOSFETS, and


    Original     		PDF EN5394QI EN5394QI EN5394QIs high-perform-894-6090 884-EN5394QI 15nf EN5394 Information Enpirion en5394qi SYDC

    Untitled

    Abstract: No abstract text available
    Text: Preliminary W19B32XMT/B Data Sheet 4M x 8/2M × 16 3V DUAL BANK FLASH MEMORY Table of Contents1. GENERAL DESCRIPTION . 4 2. FEATURES . 4


    Original     		PDF W19B32XMT/B

    Untitled

    Abstract: No abstract text available
    Text: Advance Information W19B320ST/B 4M x 8/2M × 16 3V FLASH MEMORY GENERAL DESCRIPTION The W19B320ST/B is a 32Mbit, 2.7~3.6 volt CMOS flash memory organized as 4M × 8 or 2M × 16 bits. For flexible erase capability, the 32 Mbits of data are divided into eight 8KB, and


    Original     		PDF W19B320ST/B W19B320ST/B 32Mbit, DQ15-DQ0, 12-volt u441798

    vw19b

    Abstract: W19B320S 320ST w19b320 W19L320 winbond
    Text: W19B L 320ST/B Data Sheet 4M x 8/2M × 16 3V(3.3V) FLASH MEMORY Table of Contents1. GENERAL DESCRIPTION . 4 2. FEATURES . 4


    Original     		PDF 320ST/B vw19b W19B320S 320ST w19b320 W19L320 winbond

    Untitled

    Abstract: No abstract text available
    Text: Preliminary W19B L 320ST/B Data Sheet 4M x 8/2M × 16 3V(3.3V) FLASH MEMORY Table of Contents1. GENERAL DESCRIPTION . 4 2. FEATURES . 4


    Original     		PDF 320ST/B

    BGA-Z85

    Abstract: ADQ0-ADQ15 M36P0R9060N0 M69KM096AA
    Text: M36P0R9060N0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash memory 64 Mbit (Burst) PSRAM, 1.8V supply, Mux I/O, Multi-Chip Package Preliminary Data Feature summary • ■ ■ ■ Multi-Chip Package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash memory


    Original     		PDF M36P0R9060N0 TFBGA107 BGA-Z85 ADQ0-ADQ15 M36P0R9060N0 M69KM096AA

    sandisk micro sd card pin

    Abstract: MCP 1Gb nand 512mb dram 130 256K x 16 DRAM FPM cross reference Toshiba NAND MLC FLASH BGA TSOP 48 Package nand memory toshiba MCP 1Gb 512Mb 130 PC133 registered reference design L7103 02bjxx ulsi
    Text: Future On Chips MITSUBISHI SEMICONDUCTORS MITSUBISHI ELECTRIC CORPORATION ULSI Memory Memory Series Series ULSI RAM/MCP/FLASH New Data Package http://www.mitsubishichips.com Jul. 2000 L-11002-01 MITSUBISHI ELECTRIC CONTENTS 1. General 1 2. DRAM 9 3. Low Power SRAM


    Original     		PDF L-11002-01 L-11003-0I sandisk micro sd card pin MCP 1Gb nand 512mb dram 130 256K x 16 DRAM FPM cross reference Toshiba NAND MLC FLASH BGA TSOP 48 Package nand memory toshiba MCP 1Gb 512Mb 130 PC133 registered reference design L7103 02bjxx ulsi

    MSA1020

    Abstract: sc 6700 Mitsubishi flash
    Text: L-61103-0A MITSUBISHI ELECTRIC REV Features of Mitsubishi MCP Loaded DINOR Flash 1/2 16Mb -> 32Mb -> 64Mb 2. High Speed Access Time DINOR realizes high speed random access at low voltage. 3. High Speed Erase Fastest Erase Time of all Flash Memories (40ms/Block;Typical)


    Original     		PDF L-61103-0A 40ms/Block 14mm2 11mm2 L-61104-0A MSA1020 sc 6700 Mitsubishi flash

    sharp mask rom

    Abstract: No abstract text available
    Text: MEMORIES Combination Memories ★ Under development • SRAM +Flash Memory Stacked TSOP Capacity SK configuration 1M SRAM X 4M FLASH X 8 8 LR-S13011 LR-S1302 1MSRAM X 8M FLASH X 8 8 1MSRAM X 16 8M FLASH vA 1O Block) 2M SRAM 1 1 1 1 1 8M FLASH 1 1 1 BM FLASH


    OCR Scan     		PDF LR-S13011 LR-S1302 LR-S1304 LR-S1303 LR-S1313 LR-S1306 LR-S1305A LR-S1307 56FBGA 72FBGA sharp mask rom