M58PRXXXJ Search Results

M58PRXXXJ Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: M58PR256J M58PR512J 256 Mbit or 512 Mbit x16, Multiple Bank, Multilevel, Burst 1.8 V supply Flash memories Features • Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers – VPP = 9 V for fast program	Original	PDF	M58PR256J M58PR512J M58PR512JE96Z5E M58PR512J
TFBGA105 Abstract: M58PR512J JESD97 M39P0R9080E0 TFBGA-105 strataflash 512mbit Text: M39P0R9080E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash Memory 256 Mbit Low Power SDRAM, 1.8V Supply, Multi-Chip Package Feature summary • ■ Multi-Chip Package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash memory	Original	PDF	M39P0R9080E0 TFBGA105 TFBGA105 M58PR512J JESD97 M39P0R9080E0 TFBGA-105 strataflash 512mbit
TFBGA105 Abstract: KF256 TFBGA-105 M39P0R8070E2 M58PR256J M58PR512J M65KA128AE A12-Amax Text: M39P0R8070E2 M39P0R9070E2 256 or 512Mbit x16, Multiple Bank, Multi-Level, Burst Flash memory 128 Mbit Low Power SDRAM, 1.8V supply, Multi-Chip Package Feature summary • Multi-Chip Package – 1 die of 256 (16Mb x 16) or 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst)	Original	PDF	M39P0R8070E2 M39P0R9070E2 512Mbit TFBGA105 64-bit TFBGA105 KF256 TFBGA-105 M39P0R8070E2 M58PR256J M58PR512J M65KA128AE A12-Amax
TFBGA105 Abstract: M39P0R9070E0 M58PR512J M65KA128AL Text: M39P0R9070E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash Memory 128 Mbit Low Power SDRAM, 1.8V Supply, Multi-Chip Package Feature summary • Multi-Chip Package – 1die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash memory – 1 die of 128 Mbit (4 Banks of 2Mb x16) Low	Original	PDF	M39P0R9070E0 TFBGA105 64-bit 2112-bit TFBGA105 M39P0R9070E0 M58PR512J M65KA128AL
23LIST Abstract: No abstract text available Text: M36P0R9070E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package Feature summary • Multi-Chip Package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash Memory – 1 die of 128Mbit (8Mb x16) PSRAM	Original	PDF	M36P0R9070E0 128Mbit TFBGA107 M36P0R9070E0ZAQF M36P0R9070E0 23LIST
PSRAM Abstract: M36P0R9060E0 M58PR512J M69KB096AM M58PRxxxJ Text: M36P0R9060E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash memory 64 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package Feature summary • ■ Multi-Chip Package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash memory	Original	PDF	M36P0R9060E0 TFBGA107 108MHz, 66MHz PSRAM M36P0R9060E0 M58PR512J M69KB096AM M58PRxxxJ
Untitled Abstract: No abstract text available Text: M58PR256J M58PR512J 256 Mbit or 512 Mbit x16, Multiple Bank, Multi-Level, Burst 1.8V supply Flash memories Feature summary • Supply voltage – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers – VPP = 9V for fast program	Original	PDF	M58PR256J M58PR512J 108MHz, 66MHz 256Mb 512Mb
M36P0R9070E0 Abstract: M58PR512J M69KB128AB Text: M36P0R9070E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package Feature summary • Multi-Chip Package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash Memory – 1 die of 128Mbit (8Mb x16) PSRAM	Original	PDF	M36P0R9070E0 128Mbit TFBGA107 108MHz, 66MHz M36P0R9070E0 M58PR512J M69KB128AB
BGA-Z85 Abstract: ADQ0-ADQ15 M36P0R9060N0 M69KM096AA Text: M36P0R9060N0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash memory 64 Mbit (Burst) PSRAM, 1.8V supply, Mux I/O, Multi-Chip Package Preliminary Data Feature summary • ■ ■ ■ Multi-Chip Package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash memory	Original	PDF	M36P0R9060N0 TFBGA107 BGA-Z85 ADQ0-ADQ15 M36P0R9060N0 M69KM096AA
nor flash 1.8V Abstract: PSRAM M36P0R9060E0 M58PR512J Text: M36P0R9060E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash memory 64 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package Feature summary • ■ Multi-Chip Package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash memory	Original	PDF	M36P0R9060E0 TFBGA107 108MHz, 66MHz nor flash 1.8V PSRAM M36P0R9060E0 M58PR512J
Untitled Abstract: No abstract text available Text: M58PR256J M58PR512J 256 Mbit or 512 Mbit x16, Multiple Bank, Multi-Level, Burst 1.8V Supply Flash Memories PRELIMINARY DATA Features summary • Supply voltage – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers – VPP = 9V for fast program (12V tolerant)	Original	PDF	M58PR256J M58PR512J 108MHz, 66MHz 256Mb 512Mb
M36P0R9070E0 Abstract: M58PR512J M69KB128AB Text: M36P0R9070E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package Feature summary • Multi-Chip Package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash Memory – 1 die of 128Mbit (8Mb x16) PSRAM	Original	PDF	M36P0R9070E0 128Mbit TFBGA107 108MHz, 66MHz M36P0R9070E0 M58PR512J M69KB128AB
bc 107 common base h parameters Abstract: M58PR256J M58PR512J CR10 Text: M58PR256J M58PR512J 256 Mbit or 512 Mbit x16, Multiple Bank, Multilevel, Burst 1.8 V supply Flash memories Features • Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers – VPP = 9 V for fast program	Original	PDF	M58PR256J M58PR512J bc 107 common base h parameters M58PR256J M58PR512J CR10