APT35GA90S Search Results

APT35GA90S Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
APT35GA90S		Microsemi	Insulated Gate Bipolar Transistor - Power MOS 8; Package: D3 [S]; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 35;		Original	PDF
APT35GA90SD15		Microsemi	Insulated Gate Bipolar Transistor - Power MOS 8; Package: D3; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 35;		Original	PDF

APT35GA90S Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: APT35GA90BD15 APT35GA90SD15 900V High Speed PT IGBT B TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low	Original	PDF	APT35GA90BD15 APT35GA90SD15 APP61
full wave BRIDGE RECTIFIER 1044 Abstract: No abstract text available Text: APT35GA90BD15 APT35GA90SD15 900V High Speed PT IGBT B TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low	Original	PDF	APT35GA90BD15 APT35GA90SD15 Ver18) full wave BRIDGE RECTIFIER 1044
APT35GA90B Abstract: APT35GA90S MIC4452 Text: APT35GA90B APT35GA90S 900V High Speed PT IGBT TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low	Original	PDF	APT35GA90B APT35GA90S APT35GA90B APT35GA90S MIC4452
Untitled Abstract: No abstract text available Text: APT35GA90B APT35GA90S 900V High Speed PT IGBT APT35GA90S TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -24 7 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low	Original	PDF	APT35GA90B APT35GA90S
Untitled Abstract: No abstract text available Text: APT35GA90B APT35GA90S 900V High Speed PT IGBT TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -24 7 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low	Original	PDF	APT35GA90B APT35GA90S
full wave BRIDGE RECTIFIER 1044 Abstract: DIODE RECTIFIER BRIDGE SINGLE 200A APT35GA90BD15 APT35GA90SD15 MIC4452 SD15 Text: APT35GA90BD15 APT35GA90SD15 900V High Speed PT IGBT B TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low	Original	PDF	APT35GA90BD15 APT35GA90SD15 full wave BRIDGE RECTIFIER 1044 DIODE RECTIFIER BRIDGE SINGLE 200A APT35GA90BD15 APT35GA90SD15 MIC4452 SD15