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    APT35GA90S Search Results

    APT35GA90S Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT35GA90S Microsemi Insulated Gate Bipolar Transistor - Power MOS 8; Package: D3 [S]; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 35; Original PDF
    APT35GA90SD15 Microsemi Insulated Gate Bipolar Transistor - Power MOS 8; Package: D3; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 35; Original PDF

    APT35GA90S Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: APT35GA90BD15 APT35GA90SD15 900V High Speed PT IGBT B TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		PDF APT35GA90BD15 APT35GA90SD15 APP61

    full wave BRIDGE RECTIFIER 1044

    Abstract: No abstract text available
    Text: APT35GA90BD15 APT35GA90SD15 900V High Speed PT IGBT B TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		PDF APT35GA90BD15 APT35GA90SD15 Ver18) full wave BRIDGE RECTIFIER 1044

    APT35GA90B

    Abstract: APT35GA90S MIC4452
    Text: APT35GA90B APT35GA90S 900V High Speed PT IGBT TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		PDF APT35GA90B APT35GA90S APT35GA90B APT35GA90S MIC4452

    Untitled

    Abstract: No abstract text available
    Text: APT35GA90B APT35GA90S 900V High Speed PT IGBT APT35GA90S TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -24 7 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		PDF APT35GA90B APT35GA90S

    Untitled

    Abstract: No abstract text available
    Text: APT35GA90B APT35GA90S 900V High Speed PT IGBT TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -24 7 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		PDF APT35GA90B APT35GA90S

    full wave BRIDGE RECTIFIER 1044

    Abstract: DIODE RECTIFIER BRIDGE SINGLE 200A APT35GA90BD15 APT35GA90SD15 MIC4452 SD15
    Text: APT35GA90BD15 APT35GA90SD15 900V High Speed PT IGBT B TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		PDF APT35GA90BD15 APT35GA90SD15 full wave BRIDGE RECTIFIER 1044 DIODE RECTIFIER BRIDGE SINGLE 200A APT35GA90BD15 APT35GA90SD15 MIC4452 SD15