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ComSIT USA	BF966S		1,125			1 - 10 - 100 - 1000 - 10000 -	Get Quote
NXP Semiconductors BF966S N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): .03 A; Package Style (Meter): DISK BUTTON; Operating Mode: DUAL GATE, DEPLETION MODE;
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Vyrian	BF966S		434			1 - 10 - 100 - 1000 - 10000 -	Get Quote

BF966S Datasheets (14)

Part	Manufacturer	Description	Datasheet Type	PDF
BF966S	Philips Semiconductors	Silicon N-Channel Dual Gate MOS FET	Original	PDF
BF966S	Siemens	Cross Reference Guide 1998	Original	PDF
BF966S	Vishay Intertechnology	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode	Original	PDF
BF966S	Vishay Telefunken	TRANS MOSFET N-CH 20V 0.03A 4TO-50	Original	PDF
BF966S	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
BF966S	Unknown	Cross Reference Datasheet	Scan	PDF
BF966S	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
BF966S	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
BF966S	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
BF966S	Philips Semiconductors	SILICON N-CHANNEL DUAL GATE MOS-FET	Scan	PDF
BF966SA	Vishay Intertechnology	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode	Original	PDF
BF966SA	Vishay Telefunken	TRANS MOSFET N-CH 20V 0.03A 4TO-50	Original	PDF
BF966SB	Vishay Intertechnology	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode	Original	PDF
BF966SB	Vishay Telefunken	TRANS MOSFET N-CH 20V 0.03A 4TO-50	Original	PDF

BF966S Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
BF966S Abstract: BF966SA BF966SB Text: BF966S N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixerstages especially for UHF-tuners. Features D High AGC-range D Low feedback capacitance D Low input capacitance	Original	BF966S BF966S D-74025 23-Jan-97 BF966SA BF966SB	PDF
BF966 Abstract: No abstract text available Text: BF966S VISHAY Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • 4 Integrated gate protection diodes High cross modulation performance Low noise figure High AGC-range Low feedback capacitance	Original	BF966S BF966S D-74025 20-Aug-04 BF966	PDF
TO50 package Abstract: BF966 BF966S Text: BF966S Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • • • 4 Integrated gate protection diodes High cross modulation performance e3 Low noise figure High AGC-range Low feedback capacitance	Original	BF966S 2002/95/EC 2002/96/EC BF966S BF966SA BF966SB BF966d D-74025 TO50 package BF966	PDF
2804SLS2 Abstract: BF966 BF966S BF966SA BF966SB Text: BF966S Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages especially UHF-tuners. Features D Integrated gate protection diodes	Original	BF966S BF966S D-74025 20-Jan-99 2804SLS2 BF966 BF966SA BF966SB	PDF
BF966S Abstract: BF966SA BF966SB 0V128 Text: BF966S Vishay Semiconductors N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages especially UHF-tuners. Features D Integrated gate protection diodes	Original	BF966S BF966S D-74025 20-Jan-99 BF966SA BF966SB 0V128	PDF
BF966 Abstract: BF966S BF966SA BF966SB Text: BF966S N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixerstages especially for UHF-tuners. Features D Integrated gate protection diodes D High cross modulation performance	Original	BF966S BF966S D-74025 23-Jan-97 BF966 BF966SA BF966SB	PDF
BF966SA Abstract: BF966S BF966 BF966SB TO50 package MA1300 Text: BF966S Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • 4 Integrated gate protection diodes High cross modulation performance Low noise figure High AGC-range Low feedback capacitance Low input capacitance	Original	BF966S BF966SA BF966SB BF966SA BF966S D-74025 BF966 BF966SB TO50 package MA1300	PDF
Untitled Abstract: No abstract text available Text: BF966S VISHAY Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • 4 Integrated gate protection diodes High cross modulation performance Low noise figure High AGC-range Low feedback capacitance	Original	BF966S BF966S D-74025 20-Aug-04	PDF
BF966 Abstract: No abstract text available Text: BF966S VISHAY Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • 4 Integrated gate protection diodes High cross modulation performance Low noise figure High AGC-range Low feedback capacitance	Original	BF966S BF966S D-74025 03-Sep-04 BF966	PDF
BF966S Abstract: BF966SA BF966SB Text: BF966S Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages especially UHF-tuners. Features D Integrated gate protection diodes	Original	BF966S BF966S D-74025 20-Jan-99 BF966SA BF966SB	PDF
BF966S Abstract: BF966 BF966SA BF966SB TO50 package Text: BF966S Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • • • 4 Integrated gate protection diodes High cross modulation performance e3 Low noise figure High AGC-range Low feedback capacitance	Original	BF966S 2002/95/EC 2002/96/EC 08-Apr-05 BF966S BF966 BF966SA BF966SB TO50 package	PDF
BF963 Abstract: 1N4004 SOD-123 BC547 smd BB409 2n2907 smd BAT16-046 1N4148 2N2907 SOT-23 1N4148 SOD-123 2n2222 smd Text: Cross Reference Leaded Devices SMD-Packages SOD-123 1N4001 1N4002 1N4003 1N4004 1N4001 2x 1N4002 (2x) 1N4003 (2x) 1N4004 (2x) 1N4148 1N4148 (2x) SOD-323 SCD-80 SOT-23 SOT-323 SOT-343 SOT-363 SCT-595 BAW 78 M BAS 16-02W BAS 16-03W BAS16 BAL/BAR74 BAL/BAR99	Original	OD-123 1N4001 1N4002 1N4003 1N4004 1N4148 BF963 1N4004 SOD-123 BC547 smd BB409 2n2907 smd BAT16-046 1N4148 2N2907 SOT-23 1N4148 SOD-123 2n2222 smd	PDF
S852T Abstract: BF579 T0-50 BF964S BF96 BFP183T Text: Tem ic Semiconduct ors Selector Guide Dual-Gate Si-MOSFETs N-Channel Depletion Mode Number BF961 BF964S BF966S BF988 BF994S BF995 BF996S BF998 S525T S888T VD5 V 20 20 20 12 20 20 20 12 20 10 lümax mA 30 30 30 30 30 30 30 30 30 20 Iy2isl at Ids mA mS 15	OCR Scan	BF961 BF964S BF966S BF988 BF994S BF995 BF996S BF998 S525T S888T S852T BF579 T0-50 BF96 BFP183T	PDF
BF966S Abstract: transistor BG 23 Text: 7 1 1 DÖ2 b 0 0 1 3 7 5 4 2 b l 3 M PHIN BF966S SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package w ith source and substrate interconnected, intended fo r u.h.f. applications in television tuners and professional communication equipment.	OCR Scan	711002b BF966S 7Z80878 0Db754fci BF966S transistor BG 23	PDF

dual-gate Abstract: No abstract text available Text: Philips Semiconductors Short-form product specification Silicon N-channel dual-gate MOS-FET BF966S APPLICATIONS • UHF applications in television tuners and professional communications equipment. DESCRIPTION Depletion type field-effect transistor in a plastic X-package	OCR Scan	BF966S dual-gate	PDF
Untitled Abstract: No abstract text available Text: BF966S v m rn r ▼ Vishay Telefunken N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode E lectrostatic sensitive device. O bserve precautions fo r handling. A Applications Input- and m ixer stages especially U H F-tuners. Features • Integrated gate protection diodes	OCR Scan	BF966S BF966S 20-Jan-99	PDF
Untitled Abstract: No abstract text available Text: BF966S _ J v _ SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package with source and substrate interconnected, intended fo r u.h.f. applications in television tuners and professional communication equipment.	OCR Scan	BF966S bbS3331 003ST36	PDF
BF966S Abstract: No abstract text available Text: Tem ic BF966S S e m i c o n d u c t o r s N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. ^ Applications Input- and mixerstages especially for UHF-tuners. Features • Integrated gate protection diodes	OCR Scan	BF966S BF966S 23-Jan-97	PDF
transistor BG 23 Abstract: BF966S Text: b3E J> m bbSBTSM 007430D b4T « S I C 3 BF966S J NAPC/PHILIPS SEHICOND FOR D E T A ILE D IN FO R M A TIO N SEE THE LATEST ISSUE OF HANDBO OK SC07 OR DATASHEET SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package w ith source and substrate interconnected,	OCR Scan	BF966S transistor BG 23 BF966S	PDF
buz90af Abstract: P7NB60FP P4NB80FP P6N60 P5NB60FP 2SK30A buz91a 2SK2645 BUZ100 2SK163 Text: _ HHTEPTEKC Ten: 495 739-09-95, 644-41-29 TpaH3MCTopw N-FET copTMpoBKa no HanpflweHMro U DS Kofl: 2SK192 2SK212 2SK241 BF960 BF961 BF964 BF966S BF981 BF996 2N3819 2N5457 2SK125 BFR31 J309 J310 2N4416 BF245A BF245B BF245C BF256A BF256B J111 J112 2N4391	OCR Scan	2SK192 2SK212 2SK241 BF960 BF961 BF964 BF966S BF981 OT103 BF996 buz90af P7NB60FP P4NB80FP P6N60 P5NB60FP 2SK30A buz91a 2SK2645 BUZ100 2SK163	PDF
CFY19 Abstract: CFY19-18 CFY19-22 BF995 BF963 CFY10 BF961 BF964S BF965 CFY65-14 Text: Microwave, RF & Tuner Transistors For complete package outlines, refer to pages PO-1 through PO-6 MOS Field Effect Transistors " BF961 BF963 BF964S BF965 BF966S BF988 BF987 Triode V DS V ^DS niA Pt mW 20 20 20 20 20 12 20 30 50 30 30 30 30 30 200 200 200	OCR Scan	E35bOS DD45427 BF961 BF995 BF963 BF993 BF964S BF994S BF965 BF997 CFY19 CFY19-18 CFY19-22 BF995 CFY10 CFY65-14	PDF
s525 Abstract: s918 BF988 bfr96ts S858TA3 BF-970 BFP183T Text: Tem ic Semiconductors General Information Alphanumeric Index Type. T ype . Type. Type . BFR90A 9, 243 S593T 8, 105 BFR91 9, 250 S594T 8, 112 9, 163 BFR91A . . . . 9, 256 S595T 8, 119 BFP81 9, 173 BFR92 S822T 9, 338 8. 52	OCR Scan	BF569 BF579 BF961 BF964S BF966S BF970 BF979 BF988 BF994S BF995 s525 s918 bfr96ts S858TA3 BF-970 BFP183T	PDF
CFY19-22 Abstract: CFY19 Dual-Gate* bf981 bf987 Text: "sIEMENS AKTIENGESELLSCHAF bOE I> • SEBSbDS DDS1M7M S34 «SIEfi 'T'dó'M SIEMENS Transistoren Transistors MOS Feldeffekt-Transistoren Type MOS Field-Effect Transistors Maximum Ratings Characteristics TA= 25° C ^ds V ¡d mA P,o. G ps mW dB ' * I' c' ' '	OCR Scan	BF930 BF994S BF996S BF998 BF1012 CF739 CF750 OT-143 CFY19-18 CFY19-22 CFY19 Dual-Gate* bf981 bf987	PDF
pj 929 diode picture Abstract: bf471 A7R SMD Transistor TDA8391 transistor f488 tda8351 pin-compatible tda1000 Germanium drift transistor marking 3U 3T 3C diode germanium transistor Text: Philips Sem iconductors Semiconductors for Television and Video Systems Contents PART A page SELECTION GUIDE Functional index 5 Numerical index 17 Maintainance list 27 GENERAL Quality 31 Pro Electron type numbering system for Discrete Semiconductors 31 Pro Electron type numbering system for Integrated Circuits	OCR Scan	BA481 SAA7197 SAA7199B TDA4680 TDA4685 pA733C LFC02 MEH469 pj 929 diode picture bf471 A7R SMD Transistor TDA8391 transistor f488 tda8351 pin-compatible tda1000 Germanium drift transistor marking 3U 3T 3C diode germanium transistor	PDF

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BF966S Datasheets (14)

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BF966

TO50 package

2804SLS2

BF966S

BF966

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Untitled

BF966

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S852T

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dual-gate

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transistor BG 23

buz90af

CFY19

s525

CFY19-22

pj 929 diode picture