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    S852T Price and Stock

    Toshiba America Electronic Components TPS852(T)

    SENSOR, PHOTO IC ILLUMINANCE - Tape and Reel (Alt: TPS852(T))
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    Avnet Americas TPS852(T) Reel 3,000
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    Bristol Electronics TPS852(T) 2,730
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    Cornell Dubilier Electronics Inc CGS852T200X4L

    Aluminum Electrolytic Capacitor 8500Uf, 200V, +50%,-10%, Screw; Capacitance:8500Μf; Voltage(Dc):200V; Voltage(Ac):-; Capacitance Tolerance:-10%, +50%; Capacitor Terminals:Screw; Lifetime @ Temperature:3000 Hours @ 105°C; Esr:- Rohs Compliant: Yes |Cornell Dubilier CGS852T200X4L
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    Newark CGS852T200X4L Bulk 100
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    Cornell Dubilier Electronics Inc CGS852T350X8L

    Aluminum Electrolytic Capacitor 8500Uf, 350V, +50%,-10%, Screw; Capacitance:8500Μf; Voltage(Dc):350V; Voltage(Ac):-; Capacitance Tolerance:-10%, +50%; Capacitor Terminals:Screw; Lifetime @ Temperature:3000 Hours @ 105°C; Esr:- Rohs Compliant: Yes |Cornell Dubilier CGS852T350X8L
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    Cornell Dubilier Electronics Inc CGS852T200X5L

    Aluminum Electrolytic Capacitor 8500Uf, 200V, +50%,-10%, Screw; Capacitance:8500Μf; Voltage(Dc):200V; Voltage(Ac):-; Capacitance Tolerance:-10%, +50%; Capacitor Terminals:Screw; Lifetime @ Temperature:3000 Hours @ 105°C; Esr:- Rohs Compliant: Yes |Cornell Dubilier CGS852T200X5L
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    Cornell Dubilier Electronics Inc CGS852T325X8L9PH

    Aluminum Electrolytic Capacitor 8500Uf, 325V, +50%,-10%, Screw; Capacitance:8500Μf; Voltage(Dc):325V; Voltage(Ac):-; Capacitance Tolerance:-10%, +50%; Capacitor Terminals:Screw; Lifetime @ Temperature:3000 Hours @ 105°C; Esr:- Rohs Compliant: Yes |Cornell Dubilier CGS852T325X8L9PH
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    Newark CGS852T325X8L9PH Bulk 4
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    S852T Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    S852T Vishay Intertechnology Silicon NPN Planar RF Transistor Original PDF
    S852T Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    S852T Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    S852TF Vishay Siliconix Transistors, RF & AF Original PDF
    S852TW Vishay Intertechnology Silicon NPN Planar RF Transistor Original PDF
    S852TW Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF

    S852T Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    S852T

    Abstract: S852TW
    Text: S852T/S852TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features D Low supply voltage


    Original
    PDF S852T/S852TW S852T S852TW D-74025 20-Jan-99

    Untitled

    Abstract: No abstract text available
    Text: Not for new design, this product will be obsoleted soon S852TF Vishay Semiconductors Silicon NPN Planar RF Transistor Description 1 The main purpose of this bipolar transistor is broadband amplification up to 2 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous


    Original
    PDF S852TF OT-490 18-Jul-08

    NPN transistor mhz s-parameter

    Abstract: 945 TRANSISTOR S852T
    Text: S852T Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low-noise and high-gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features D Low supply voltage D Low current consumption


    Original
    PDF S852T 15the D-74025 18-Apr-96 NPN transistor mhz s-parameter 945 TRANSISTOR S852T

    sot-23 MARKING 636

    Abstract: No abstract text available
    Text: S852T / S852TW Vishay Semiconductors Silicon NPN Planar RF Transistor 1 Features • • • • • • • SOT-23 Low supply voltage Low current consumption e3 50 Ω input impedance at 945 MHz Low noise figure High power gain Lead Pb -free component Component in accordance to RoHS 2002/95/EC


    Original
    PDF S852T S852TW 2002/95/EC 2002/96/EC OT-23 OT-323 OT-23 S852TW OT-323 sot-23 MARKING 636

    S852T

    Abstract: S852TW transistor d 945
    Text: S852T/S852TW Vishay Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features D Low supply voltage


    Original
    PDF S852T/S852TW S852T S852TW D-74025 20-Jan-99 transistor d 945

    S852T

    Abstract: NPN transistor mhz s-parameter
    Text: S852T Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low-noise and high-gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features D Low supply voltage D Low current consumption


    Original
    PDF S852T D-74025 08-Apr-97 S852T NPN transistor mhz s-parameter

    Untitled

    Abstract: No abstract text available
    Text: S852T/S852TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features D Low supply voltage


    Original
    PDF S852T/S852TW S852T S852TW D-74025 20-Jan-99

    S852T

    Abstract: S852TW
    Text: S852T / S852TW Vishay Semiconductors Silicon NPN Planar RF Transistor 1 Features • • • • • • • SOT-23 Low supply voltage Low current consumption e3 50 Ω input impedance at 945 MHz Low noise figure High power gain Lead Pb -free component Component in accordance to RoHS 2002/95/EC


    Original
    PDF S852T S852TW OT-23 2002/95/EC 2002/96/EC OT-323 S852T OT-23 OT-323 S852TW

    945 TRANSISTOR

    Abstract: SOT-490 S852TF
    Text: S852TF Vishay Semiconductors Silicon NPN Planar RF Transistor Description 1 The main purpose of this bipolar transistor is broadband amplification up to 2 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous


    Original
    PDF S852TF OT-490 168ed 08-Apr-05 945 TRANSISTOR SOT-490 S852TF

    S852TF

    Abstract: transistor 945 transistor C 945 ic 945
    Text: S852TF VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Description The main purpose of this bipolar transistor is broadband amplification up to 2 GHz. In the space-saving 3-pin surface-mount SOT490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous


    Original
    PDF S852TF OT490 OT490 168es D-74025 23-Sep-02 S852TF transistor 945 transistor C 945 ic 945

    S852TW

    Abstract: NPN transistor mhz s-parameter
    Text: S852TW Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low-noise and high-gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features D Low supply voltage D Low current consumption


    Original
    PDF S852TW D-74025 07-Nov-97 S852TW NPN transistor mhz s-parameter

    1251 sot-23

    Abstract: No abstract text available
    Text: S852T / S852TW VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor 1 Features • • • • • Low supply voltage Low current consumption 50 Ω input impedance at 945 MHz Low noise figure High power gain 2 Applications SOT-23 3 1 2 For low noise and high gain broadband amplifiers at


    Original
    PDF S852T S852TW OT-23 OT-323 OT-23 S852TW OT-323 1251 sot-23

    Untitled

    Abstract: No abstract text available
    Text: S852TF Vishay Semiconductors Silicon NPN Planar RF Transistor Description 1 The main purpose of this bipolar transistor is broadband amplification up to 2 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous


    Original
    PDF S852TF OT-490 D-74025 02-May-05

    945 TRANSISTOR

    Abstract: S852TF
    Text: S852TF VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Description 1 The main purpose of this bipolar transistor is broadband amplification up to 2 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous


    Original
    PDF S852TF OT-490 D-74025 06-Sep-04 945 TRANSISTOR S852TF

    transistor LC 945

    Abstract: No abstract text available
    Text: Temic S852TW Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. ^ Observe precautions for handling. M Applications For low-noise and high-gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features • Low supply voltage


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    PDF S852TW 13fi32 D-74025 07-Nov-97 transistor LC 945

    transistor marking 1p Z

    Abstract: No abstract text available
    Text: Tem ic S852T Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low-noise and high-gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features • Low supply voltage


    OCR Scan
    PDF S852T 08-Apr-97 1300MHz transistor marking 1p Z

    lc 945 p transistor

    Abstract: 362-0 transistor
    Text: T em ig S852T S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. mk Applications For low-noise and high-gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features


    OCR Scan
    PDF S852T 1300MHz 08-Apr-97 lc 945 p transistor 362-0 transistor

    lc 945 p transistor

    Abstract: No abstract text available
    Text: _ S852T/S852TW VfSMAY ▼ Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ M Applications For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 5 mA.


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    PDF S852T/S852TW S852T S852TW 20-Jan-99 lc 945 p transistor

    U2740B-FP

    Abstract: NPN planar RF transistor 16 bit ic rf encoder programmable read write transponder transistor C892 e5550F-S8 M44C0W RF ENCODER RF 125khz receiver ir preamplifier
    Text: Tem ic S e m i c o n d u c t o r s Selector Guide Remote Control Part Number Function Key Features Package IR Transm itter / Receiver BPV23NF PIN diode IR photo detector, 875 to 950 nm, sensitivity typical 65 ^A TSHA520. IR emitter family High efficiency, ± 12°, 875 nm


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    PDF BPV23NF TSHA520. TSHA550. U426B-FP U2535B-FP U2538B-FP BFQ62 QFP64 PLCC44 DIP40 U2740B-FP NPN planar RF transistor 16 bit ic rf encoder programmable read write transponder transistor C892 e5550F-S8 M44C0W RF ENCODER RF 125khz receiver ir preamplifier

    U4311B-C

    Abstract: rc car receiver remote control rc car circuit diagram
    Text: T e m ic U4311B Se m i co n ü u c tors Low-Current Superhet Remote Control Receiver Description The U 431IB is a monolithic integrated circuit in bipolar technology for low-current UHF remote control super­ heterodyne receivers in amplitude- or frequencymodulated mode. Typical applications are keyless car


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    PDF U4311B 431IB D-74025 19-Nov-98 U4311B-C rc car receiver remote control rc car circuit diagram

    capacitor 47 vishay

    Abstract: No abstract text available
    Text: TEMIC U4314B S e m i c o n ü u c tors Logarithmic AM Demodulator / RSSI Description The U4314B is a monolithic Integrated Circuit in bipolar technology for low current super-heterodyne receivers. It can be used as a logarithmic Received Signal Strength Indicator RSSI or as a logarithmic AM demodulator. Its


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    PDF U4314B U4314B D-74025 19-Nov-98 capacitor 47 vishay

    ir transmitter receiver

    Abstract: NPN planar RF transistor 4311B U2535B RF amplifier SOT23 5 IC for IR receiver fm transmitter dip 200 hn ir remote decoder IC rf transmitter receiver
    Text: Tem ic Semiconductors # * SOT23 SOT143 S08 DIP16 ► SOK SS028 Remote Control/ Keyless Entry ICs Part Number Function Key Features Package Source IR Transmitter / Receiver BPV23NF PIN diode see Opto section IR photo detector, 875 to 950 nm, sensitivity typical 65 |UA


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    PDF OT143 DIP16 SS028 BPV23NF TSHA520x TSHA550x 2535B 4311B-FS 4311B 4313B ir transmitter receiver NPN planar RF transistor U2535B RF amplifier SOT23 5 IC for IR receiver fm transmitter dip 200 hn ir remote decoder IC rf transmitter receiver

    M44C260

    Abstract: ultrasonic transmitter and receiver Mhz Transmitter with SAW-based Oscillator da5276 RF Transmitter receiver ICs u2535b ir remote decoder IC ir remote transmitter and receiver circuit RF encoder used in transmitter S852T
    Text: T em ig S e m i c o n d u c t o r s Remote Control The U431xB IC family is designed to realize a lowcurrent UHF remote control system. This system is flexible with regard to amplitude or frequency modula­ tion, different transmission coding and a wide range of


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    PDF U431xB S822T/ S852T 4311B. U2740B BPV23FN U426B U2535B U2538B TSHA5200 M44C260 ultrasonic transmitter and receiver Mhz Transmitter with SAW-based Oscillator da5276 RF Transmitter receiver ICs ir remote decoder IC ir remote transmitter and receiver circuit RF encoder used in transmitter

    S852T

    Abstract: BF579 T0-50 BF964S BF96 BFP183T
    Text: Tem ic Semiconduct ors Selector Guide Dual-Gate Si-MOSFETs N-Channel Depletion Mode Number BF961 BF964S BF966S BF988 BF994S BF995 BF996S BF998 S525T S888T VD5 V 20 20 20 12 20 20 20 12 20 10 lümax mA 30 30 30 30 30 30 30 30 30 20 Iy2isl at Ids mA mS 15


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    PDF BF961 BF964S BF966S BF988 BF994S BF995 BF996S BF998 S525T S888T S852T BF579 T0-50 BF96 BFP183T