BFQ268
Abstract: No abstract text available
Text: Philips Semiconductors_ ,—. 7^ 3 3 - 0 5 - NPN 1 GHz video transistor PH ILIPS INTERNATIONAL DESCRIPTION Product specification - BFQ268; BFQ268/1 5bE D • 7 1 1 D flP b OOMShS? 344 « P H I N PINNING NPN silicon epitaxial transistor with
|
OCR Scan
|
PDF
|
BFQ268;
BFQ268/1
711002t)
BFQ268
OT172A1)
BFQ268/I
OT172A3
BFQ268/I
004SbbD
|
Untitled
Abstract: No abstract text available
Text: Philips Semiconductors • b b S 3 T 31 D D 3 1 ? b fi 64T ■ NPN 1 GHz video transistor ^ i i — DESCRIPTION A P X ^^^Productspecification BFQ268; BFQ268/I ■ N AMER PHILIPS/DISCRETE b'lE D - PINNING NPN silicon epitaxial transistor with emitter-ballasting resistors and a
|
OCR Scan
|
PDF
|
BFQ268;
BFQ268/I
BFQ268
UB8670
DD31771
LA123-
|
SOT128
Abstract: BFQ262 BFQ265 BFQ268 X3A-BFQ268
Text: bb53^31 Philips Sem iconductors 0032211 Em ^BAPX Product specification NPN 1 GHz video transistor crystal X3A-BFQ268 b^E T> N AMER P H I L I P S / D I S C RE TE DESCRIPTION M ECHANICAL DATA NPN crystal used in BFQ262 A (SOT32), BFQ265(A) (SOT128) and BFQ268 (SO T172). Crystals are supplied
|
OCR Scan
|
PDF
|
hbS3T31
X3A-BFQ268
BFQ262
BFQ265
OT128)
BFQ268
OT172)
X3A-BFQ268
50good
RV-3-5-52/733
SOT128
BFQ268
|
Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification NPN 1 GHz video transistor crystal PHILIPS INTERNATIONAL X3A-BFQ268 7110fl2b OGMbldl 7fl3 • P H I N SbE D DESCRIPTION MECHANICAL DATA NPN crystal used in BFQ262 A (SOT32), BFQ265(A) (SOT128) and BFQ268 (SOT172). Crystals are supplied
|
OCR Scan
|
PDF
|
X3A-BFQ268
7110fl2b
BFQ262
BFQ265
OT128)
BFQ268
OT172)
|
BFQ26
Abstract: BFQ268
Text: Philips Components bfq268 _ j \ _ NPN HIGH FREQUENCY HIGH VOLTAGE TRANSISTOR NPN silicon epitaxial transistor w ith em itter ballasting resistors and a gold sandwich metallization to ensure optim um temperature profile and excellent reliability properties. It features high break-down
|
OCR Scan
|
PDF
|
bfq268
BFQ26
OT172A1.
8-32UNC
7Z86903
M90-1192/Y
BFQ268
|
motorola transistor 5331
Abstract: BFQ268
Text: Philips Semiconductors bbS3T31 DD317LÛ 64^ MAPX NPN 1 GHz video transistor ^ BFQ268; BFQ268/I N DESCRIPTION Product specification AMER PHILIPS/DISCRETE b^E D - PINNING NPN silicon epitaxial transistor with emitter-ballasting resistors and a gold sandwich metallization to
|
OCR Scan
|
PDF
|
bbS3T31
DD317bÃ
BFQ268;
BFQ268/I
BFQ268
OT172A1)
BFQ268/I
OT172A3
motorola transistor 5331
|
BFQ262
Abstract: BFQ265 BFQ268 X3A-BFQ268 SOT128 SOT172 crystal PHILIPS
Text: Philips Semiconductors Product specification NPN 1 GHz video transistor crystal PHILIPS INTERNATIONAL X3A-BFQ268 7110021, OQMblDl 7fl3 SbE D DESCRIPTION IPHIN MECHANICAL DATA NPN crystal used in BFQ262 A (SOT32), BFQ265(A) (SOT128) and BFQ268 (SOT172). Crystals are supplied
|
OCR Scan
|
PDF
|
BFQ262
BFQ265
OT128)
BFQ268
OT172)
X3A-BFQ268
X3A-BFQ268
7110asb
RV-3-5-52/733
BFQ268
SOT128
SOT172
crystal PHILIPS
|
Untitled
Abstract: No abstract text available
Text: bbS 3T31 Philips Semiconductors 0032211 2H1 ^ l A P X Product specification NPN 1 GHz video transistor crystal — N X3A-BFQ268 AMER PHILIPS/DISCRETE DESCRIPTION fc^E 1 MECHANICAL DATA NPN crystal used in BFQ262 A (SOT32), BFQ265(A) (SOT128) and BFQ268 (SOT172). Crystals are supplied
|
OCR Scan
|
PDF
|
X3A-BFQ268
BFQ262
BFQ265
OT128)
BFQ268
OT172)
|
Untitled
Abstract: No abstract text available
Text: Philips Semiconductors _ - NPN 1 GHz video transistor PHILIPS INTERNATIONAL DESCRIPTION _ Product specification - 7^ 3 3 - 0 5 BFQ268; BFQ268/1 SbE D m 71106Bb DG45bS7 344 H P H I N PINNING NPN silicon epitaxial transistor with emitter-ballasting resistors and a
|
OCR Scan
|
PDF
|
BFQ268;
BFQ268/1
71106Bb
DG45bS7
BFQ268
T-33-05
------BFQ268;
BFQ268/I
|
fr91a
Abstract: philips bfq FQ235a t122 25 3 FQ262a fr90a 122e BFR134 t122 25 10 t122 25 72
Text: 22 Small Signal Leaded Devices Wideband Transistors cont. h FE R a tin g s Type P ackage v CEO V S O T -103 S O T -103 S O T -103 S O T -103 S O T -173 S O T -173 S O T -173 S O T -173 S O T -173 S O T -173 TO -72 S O T -173 S O T -122 S O T-37 TO -72 TO -72
|
OCR Scan
|
PDF
|
BFG96
BFP96
BFP505
BFP520
BFP540
BFQ33C
BFQ63
BFQ65
BFQ66
BFQ161
fr91a
philips bfq
FQ235a
t122 25 3
FQ262a
fr90a
122e
BFR134
t122 25 10
t122 25 72
|
bf0262a
Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
Text: Alphanumeric Type Index Typo Page Type Page Type Page Page Type 1N821 1N821A 1N823 1N823A 1N825 11 11 11 11 11 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 13 13 13 13 13 2N2905A 2N2906 2N2906A 2N2907 2N2907A 17 17 17 17 17 2N6599 2N6600 2N6601 2N7000 2N7002 1N825A
|
OCR Scan
|
PDF
|
1N821
1N821A
1N823
1N823A
1N825
1N825A
1N827
1N827A
1N829
1N829A
bf0262a
BF0262
OM335
1N5821ID
OM336
OM2061
OM926
BUK645
OM2060
BLY94
|
transistor f6 13003
Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.
|
OCR Scan
|
PDF
|
SC08b
transistor f6 13003
equivalent transistor bj 131-6
transistor Eb 13003 BM
BB112
smd TRANSISTOR code marking 2F 6n
a1211 lg
CQY58
BU705
TRANSISTOR 131-6 BJ 026
philips om350
|
BFQ161
Abstract: SOT37
Text: 57 RF/Microwave Devices RF Wideband Transistors cont. Type No. BFS25A BFS505 BFS520 BFS540 BFT24 BFT25 BFT25A BFT92 BFT92AW BFT93 BFT93AW BFW16A BFW17A BFW30 BFW92 BFW92A BFW93 BFY90 Ratings M lc * Characteristics Polarity Package Outline Curve No. VcEO
|
OCR Scan
|
PDF
|
OT-323
OT-37
OT-23
BFQ161
SOT37
|
BLY32
Abstract: blf278 108 amplifier Philips Application BLX15 RF Power Amplifiers bgy55 blw95 BLF543 BFQ43 BLW33 blf177 108 amplifier
Text: 83 RF/Microwave Devices Video Amplifiers Video Amplifier Line-Ups Application Preamp Stage B & W high resolution colour high resolution OM3016 OM925 OM975 OM3026 OM925 OM975 Output Stage OM976 Wideband Transistors for Application in Video Output Amplifiers in Monitors
|
OCR Scan
|
PDF
|
OM3016
OM3026
OM925
OM925
OM975
OM976
BFQ231
BFQ231A
BFQ251
BLY32
blf278 108 amplifier
Philips Application BLX15
RF Power Amplifiers
bgy55
blw95
BLF543
BFQ43
BLW33
blf177 108 amplifier
|
|
BGY41
Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.
|
OCR Scan
|
PDF
|
LCD01
BGY41
BFW10 FET transistor
CQY58
germanium
RX101
equivalent components FET BFW10
bd643
bf199
283 to92 600a transistor
zener phc
|
128-B
Abstract: SOT128B bfq162
Text: 58 RF/Microwave Devices Video Transistors Characteristics Ratings Typo No. Pkg. •Vcbo max V ■VCEO max (V) max (mA) hFB min T, CCB max (pF> (°C) fr min (MHz) NPN BFQ161 BFQ162 BFQ163 BFQ166 BFQ231 BFQ231A BFQ232 BFQ232A BFQ233 BFQ233A BFQ234 BFQ235 BFQ235A
|
OCR Scan
|
PDF
|
BFQ161
BFQ162
BFQ163
BFQ166
BFQ231
BFQ231A
BFQ232
BFQ232A
BFQ233
BFQ233A
128-B
SOT128B
|