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    NMB Technologies

    Abstract: 1M204-07 CMOS256K 1M204 1M204-10 LWL1R
    Text: MËÊBmÊÊÊmmm m MiïÊmmÊmÊÊÊmÊËÈÊÊmmm. NMB Sem iconductor AAA1M204 Fast Page Mode CMOS256K x 4 Dynamic RAM [p iB iS iU M n r a K ii PIN CONFIGURATIONS FEATURES 20 i/o , C • 2 6 2,14 4 x 4 bit Organization ■ Single 5V ± 1 0 % Power Supply


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    AAA1M204 CMOS256K 100ns 110ns 130ns 150ns 190ns CA91311, NMB Technologies 1M204-07 1M204 1M204-10 LWL1R PDF

    QFP44-P-1010

    Abstract: No abstract text available
    Text: CMOS 256K 32K x 8 Mask-Programmable ROM FEATURES PIN CONNECTIONS • 3 2 ,7 6 8 • Access time: 150 ns (M AX.) • Low-power consumption: x 8 bit organization Operating: 110 m W (M AX.) Standby: 8 2 .5 |iW (M AX.) • Programmable output enable • Static operation (Internal sync, system)


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    28-pin, 600-m 450-m 44-pin, LH53259 LH53259 I-------15 600-mil QFP44-P-1010 PDF

    Untitled

    Abstract: No abstract text available
    Text: NN51V4260A series Fast Page Mode CMOS 256KX 16bit Dynamic RAM NPN a Preliminary Specification d e s c rip tio n The NN51V4260A series is a high performance CMOS Dynamic Random Access Memory organized as 262,144 words by 16 bits. The NN51V4260A series is fabricated with advanced CMOS technology and de­


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    NN51V4260A 256KX 16bit NN51V4260AL 0Q0G57T NNS1V4260A PDF

    Untitled

    Abstract: No abstract text available
    Text: SHARP CORP blE » LH51256L FEATURES Access times: 100/120 ns MAX. • Power consumption: Operating: 248 mW (MAX.) (Ta = -40 to 85°C, minimum cycle) Standby: 5.5 (MAX.) (Ta = 0 to 60°C) DESCRIPTION The LH51256L is a 256K bit static RAM organized as 32,768 x 8 bits which provides low-power standby


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    LH51256L 28-pin, 600-mil 450-mil 28-pin LH51256 PDF

    intel eprom Intelligent algorithm

    Abstract: LH57254-90 LH57254J-90
    Text: LH57254/J PIN CONNECTIONS FEATURES • 32,768 • Access times: x CMOS 256K 32K x 8 OTPROM/EPROM 8 bit organization • • VppC 1 28 □ Vcc C 2 27 □ Au a 7C 3 26 3 A i 3 A .C 4 25 □ Ae A sC 5 24 □ A , M I 6 23 □ A 11 aiî LH57254J: 70/90 ns LH57254: 90 ns


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    LH57254/J LH57254J: LH57254: 28-pin, 600-mil LH57254J LH57254 intel eprom Intelligent algorithm LH57254-90 LH57254J-90 PDF

    NN514256

    Abstract: NN514256A
    Text: NN514256/ NN514256A series Fast Page Mode CMOS 256Kx4bit Dynamic RAM DESCRIPTION The NN514256/A series is a high performance CMOS Dynamic Random Access Memory organized as 262,144 words by 4 bits. The NN514256/A series is fabricated with advanced CMOS technology and designed


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    NN514256/ NN514256A 256Kx4bit NN514256/A I/01-I/0 NN5142S6 NN514256XXX NN514256 PDF

    Untitled

    Abstract: No abstract text available
    Text: NN514170 series Fast Page Mode CMOS 256K X 16bit Dynamic RAM NPN>Â< DESCRIPTION The NN514170 series is a high performance CMOS Dynamic Random Access Memory organized as 262,144 words by 16 bits. The NN514170 series is fabricated with advanced CMOS technology and designed


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    NN514170 16bit NN514170L NN514170XXI 128ms PDF

    Untitled

    Abstract: No abstract text available
    Text: NN51V4260A series Fast Page Mode CMOS 256KX 16bit Dynamic RAM NPN a DESCRIPTION The N N 51V4260A series is a high perform ance C M O S D ynam ic Random Access M em ory organized as 262,144 words by 16 bits. The N N 51V4260A series is fabricated with advanced C M OS technology and designed with innovative design


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    NN51V4260A 256KX 16bit 51V4260A NN51V4260AL 0QD1330 PDF

    Untitled

    Abstract: No abstract text available
    Text: NN51V4265A series EDO Hyper Page Mode CMOS 256 K x 16bit Dynamic RAM NPN/À DESCRIPTION The N N 51V4265A series is a high perform ance C M OS D ynam ic Random Access M em ory organized as 262,144 words by 16 bits. The NN51V4265A series is fabricated with advanced C M OS technology and designed with innovative design


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    NN51V4265A 16bit 51V4265A T005bS0 00013b0 NHS1V426SA OS256KX NN51V4265AXXI PDF

    nn514260

    Abstract: NN514260A 514260A
    Text: NN514260/NN514260A series Fast Page Mode CMOS 256K x 16bit Dynamic NPN a DESCRIPTION The N N514260/A series is a high performance C M O S Dynamic Random Access Memory organized as 262,144 words by 16 bits. The NN514260/A series is fabricated with advanced C M O S technology and designed with innovative design


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    NN514260/NN514260A 16bit N514260/A NN514260/A NN514260/ NN514260A NN514260XX 128ms nn514260 514260A PDF

    NN514265

    Abstract: nn514260 N092-FXX-00047 NN514260A 514265 EZ-34 tp NN514265A N092-FXX-00026
    Text: NPN a NN514265/ NN514265A series EDO (Hyper Page) Mode CMOS 256Kx 16bit Dynamic RAM DESCRIPTION T he N N 514265/A series is a high perform ance C M OS D ynam ic Random A ccess M em ory organized as 262,144 w ords by 16 bits. The NN514265/A series is fabricated w ith advanced C M OS technology and designed w ith innovative design


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    NN514265/ NN514265A 256Kx 16bit 514265/A NN514265/A NNS14265/ NN514265 nn514260 N092-FXX-00047 NN514260A 514265 EZ-34 tp N092-FXX-00026 PDF