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    LH51256 Search Results

    LH51256 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    LH51256 Unknown CMOS 256K (32K x 8) STATIC RAM Scan PDF
    LH51256-10 Unknown CMOS 256K (32K x 8) STATIC RAM Scan PDF
    LH51256-10L Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    LH51256-10L Sharp CMOS 256K (32K x 8) STATIC RAM Scan PDF
    LH51256-12 Unknown CMOS 256K (32K x 8) STATIC RAM Scan PDF
    LH51256-12L Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    LH51256-12L Sharp CMOS 256K (32K x 8) STATIC RAM Scan PDF
    LH51256N-10 Unknown CMOS 256K (32K x 8) STATIC RAM Scan PDF
    LH51256N-10L Sharp CMOS 256K (32K x 8) STATIC RAM Scan PDF
    LH51256N-12 Sharp CMOS 256K (32K x 8) STATIC RAM Scan PDF
    LH51256N-12L Sharp CMOS 256K (32K x 8) STATIC RAM Scan PDF

    LH51256 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LH51256N10L

    Abstract: LH51256 LH51256N-10L DIP02
    Text: LH51256 CMOS 256K 32K x 8 Static RAM FEATURES DESCRIPTION • 32,768 × 8 bit organization The LH51256 is a 256K bit static RAM organized as 32,768 × 8 bits which provides low-power standby mode. It is fabricated using silicon-gate CMOS process technology.


    Original     		PDF LH51256 LH51256 28-PIN 28-pin, 600-mil 450-mil 28SOP LH51256N10L LH51256N-10L DIP02

    mn4117405

    Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
    Text: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE


    Original     		PDF CP005-1F IS89C51 Z16C02 Z86E30 ZZ16C03 Z8036 Z8536 Z8038 Z5380 Z53C80 mn4117405 NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51

    UM61256AK-15

    Abstract: UM61256ak sram um61256ck-20 HY62256ALP10 XL93LC46AP w24m257 GVT7164D32Q-6 km62256blg-7 w24m257ak-15 UM61256
    Text: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM FLASH MICROCONTROLLER SERIAL FLASH JULY 1998 Integrated Silicon Solution, Inc. CP005-1E 7/1/98 1 ISSI CROSS REFERENCE GUIDE


    Original     		PDF CP005-1E AS7C1024-12JC AS7C1024-12PC AS7C1024-12TJC AS7C1024-12TPC AS7C1024-15JC AS7C1024-15PC AS7C1024-15TJC AS7C1024-15TPC AS7C1024-20JC UM61256AK-15 UM61256ak sram um61256ck-20 HY62256ALP10 XL93LC46AP w24m257 GVT7164D32Q-6 km62256blg-7 w24m257ak-15 UM61256

    um61256ak-15

    Abstract: w24m257ak-15 um61256 um61256ck-20 um61256ak-12 km62256blg-7 KM68257Bp-20 W24M257AK HY6264ALP-10 w24M257
    Text: ISSI Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM/NVM Serial EEPROM EPROM FLASH Static RAM SEPTEMBER 1996 CROSS REFERENCE GUIDE E2PROM ATMEL ISSI MIL PACKAGE SYMBOL PC P SC G SC GR AT93C46-10PC AT93C46-10PC-2.7 AT93C46-10SC AT93C46-10SC-2.7


    Original     		PDF AT93C46-10PC AT93C46-10PC-2 AT93C46-10SC AT93C46-10SC-2 AT93C46R-10SC AT93C46R-10SC-2 AT93C46W-10SC AT93C46W-10SC-2 AT93C56-10PC AT93C56-10PC-2 um61256ak-15 w24m257ak-15 um61256 um61256ck-20 um61256ak-12 km62256blg-7 KM68257Bp-20 W24M257AK HY6264ALP-10 w24M257

    Untitled

    Abstract: No abstract text available
    Text: LH51256/ CMOS 256K 32K x 8 Static RAM FEATURES DESCRIPTION • 32,768 x 8 bit organization The LH51256 is a 256K bit static RAM organized as 32,768 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access times: 100/120 ns (MAX.)


    OCR Scan     		PDF LH51256/ 28-pin, 600-mil 450-mil LH51256 28-PIN LH51256

    Untitled

    Abstract: No abstract text available
    Text: LH51256 CMOS 256K 32K x 8 Static RAM FEATURES DESCRIPTION • 32,768 x 8 bit organization The LH51256 is a 256K bit static RAM organized as 32,768 x 8 bits which provides low-power standby mode. It is fabricated using silicon-gate CMOS process technology.


    OCR Scan     		PDF LH51256 28-pin, 600-mil 450-mil LH51256 1SOP028-P-0450)

    Untitled

    Abstract: No abstract text available
    Text: SHARP CORP blE » LH51256L FEATURES Access times: 100/120 ns MAX. • Power consumption: Operating: 248 mW (MAX.) (Ta = -40 to 85°C, minimum cycle) Standby: 5.5 (MAX.) (Ta = 0 to 60°C) DESCRIPTION The LH51256L is a 256K bit static RAM organized as 32,768 x 8 bits which provides low-power standby


    OCR Scan     		PDF LH51256L 28-pin, 600-mil 450-mil 28-pin LH51256

    lh51256l

    Abstract: No abstract text available
    Text: LH51256L CMOS 256K 32K x 8 Static RAM FEATURES DESCRIPTION • 32,768 x 8 bit organization Tiie LH51256L is a 256K bit state RAM organized as 32,768 x 8 bits which provides low-power standby mode. It is fabricated using silicon-gate CMOS process technology.


    OCR Scan     		PDF LH51256L 28-pin, 600-mil 450-mil LH51256L 28-PIN

    organizational structure samsung

    Abstract: NMS256X8 MICRON Cross Reference NMS256 256K RAM HM62256 MK6264 51256SL TC5565 "cross reference" MN44256 M5M5256
    Text: Static RAM Cross Reference STATIC RAM CROSS REFERENCE ORGANIZATIONAL STRUCTURE 2K 2K X X 32K 8K X e w/CE, OE 8 W/CE1, CE2 X 8 Stow 8 Slow COMPETITIVE VENDOR SH ARP MODEL LH5116 LH5118 LH51256 LH5164A AMD Am9128 Harris CDM6116 Hitachi HM6116A Hyundai HY6116


    OCR Scan     		PDF LH5116 Am9128 CDM6116 HM6116A HY6116 HM6116 MS6516 SRM2016 MK6116 CXK5816 organizational structure samsung NMS256X8 MICRON Cross Reference NMS256 256K RAM HM62256 MK6264 51256SL TC5565 "cross reference" MN44256 M5M5256

    LH51256N10L

    Abstract: N12L LH51256 LH51256N-10L
    Text: LH51256L DESCRIPTION FEATURES • 32,768 x 8 bit organization • Access times: 100/120 ns MAX. • Power consumption: Operating: 248 mW (MAX.) (T a = -40 to 85°C, minimum cycle) (MAX.) (T a = 0 to 60°C) • • Fully-static operation TTL compatible I/O


    OCR Scan     		PDF LH51256L 28-pin, 600-mi 450-mil LH51256L 28-pin LH51256 LH51256N10L N12L LH51256 LH51256N-10L

    818l

    Abstract: No abstract text available
    Text: LH51256L DESCRIPTION FEATURES • 32 ,768 x 8 bit organization • Access times: 100/120 ns M AX. • Operating: 248 m W (M AX.) (T a = -40 to 85°C , minimum cycle) (M AX.) (T a = 0 to 60°C ) • Fully static operation • TTL compatible I/O • The LH51256L is a 256K bit static RAM organized


    OCR Scan     		PDF LH51256L LH51256L 28-PIN 51256L-1 51256L LH512561- 28-Din. 600-mil DIP28-P-600) 818l

    LH51256

    Abstract: LH51256N-10
    Text: LH51256 T~Yé-'2L3-/ CMOS 256K 32K x 8 Static RAM FEATURES DESCRIPTION • 32,768 x 8 bit organization The LH51256 is a 256K bit static RAM organized as 32,768 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access times: 100/120 ns (MAX.)


    OCR Scan     		PDF LH51256 28-pin, 600-mil 450-mil LH51256 28-pin 22ime LH51256N-10

    lh57257

    Abstract: IR2E31 IR2E01 IR2C07 IR2E27 IR2E24 IR2E19 IR2E31A IR3n06 IR2E02
    Text: Index Model No. ARM7D CPU Core Bi-CMOS 1 27 40,42 _ _ CMOS CMOS CMOS CMOS CMOS 4A 5A 8 A AH D ID1 Series ID2 Series 40,42 40.42 40,42 40,42 40 B ü.’1*"! 14,15 14 m IR2339 IR2403 IR2406 IR2406G IR2410 IR2411 IR2415 IR2419 IR2420 IR2422 IR2425 IR2429


    OCR Scan     		PDF IR2E201 IR2E24 IR2E27/A IR2E28 IR2E29 IR2E30 IR2E31/A IR2E32N9 IR2E34 IR2E41 lh57257 IR2E31 IR2E01 IR2C07 IR2E27 IR2E19 IR2E31A IR3n06 IR2E02

    CMOS256K

    Abstract: lh51256l
    Text: • 32,768 x 8 bit organization • Access times: 100/120 ns MAX. • Power consumption: Operating: 248 mW (MAX.) (T a = -40 to 85°C, minimum cycle) Standby: 5.5 nW (MAX.) (Ta = 0 to 60°C) • • Fully-static operation TTL compatible I/O • Three-state outputs


    OCR Scan     		PDF LH51256L 28-pin, 600-mil 450-mil LH51256L LH51256 DIP28-P-600) CMOS256K

    LH5160N

    Abstract: LH5115 LH5118D LH5160 LH5160D LH521000 LH5167 LH52252A LH5114H LH5911-55
    Text: NOV 0 5 1990 L H 5 9 1 1 /L H 5 9 1 2 /L H 5 9 1 4 2K x 8 CMOS Dual Port RAM Preliminary Data Sheet Features Functional Description The IH 5911, LH5912 and LH5914are dual port static RAMs that use true dual port memory cells to allow each port to independently access any location in memory.


    OCR Scan     		PDF LH5912 LH5914are LH5911 LH5914 /IDT7134 16Kx18 64Kx18 LH5160N LH5115 LH5118D LH5160 LH5160D LH521000 LH5167 LH52252A LH5114H LH5911-55

    LH5911

    Abstract: lh5167-55 LH5101 LH52250 LH5160D LH5167 LH52252 LH5114H lh5160n 4kx8 static ram ttl
    Text: NOV 0 5 1990 L H 5 9 1 1 /L H 5 9 1 2 /L H 5 9 1 4 2K x 8 CMOS Dual Port RAM Preliminary Data Sheet Functional Description Features The LH5911. LH5912 and LH5914are dual port static RAMs that use true dual port memory cells to allow each port to independently access any location in memory.


    OCR Scan     		PDF LH5911 /LH5912/LH5914 LH5911. LH5912 LH5914are LH5914 16Kx18 LH52270 lh5167-55 LH5101 LH52250 LH5160D LH5167 LH52252 LH5114H lh5160n 4kx8 static ram ttl

    lh5168

    Abstract: No abstract text available
    Text: MEMORIES Static RAMs ★ Under development P ro ce ss C a p a c ity C o n fig u ra tio n Model No. A c c e s s tim e n s 70 80 90 100 120 LH5116 2k X 8 16k LH51116H Operating temperature : - 40 to 8 5 t IUUU "O LH5116S Supply voltage : 3 V±10% LH5168 Full


    OCR Scan     		PDF LH5116 LH51116H LH5116S LH5168 LH5168H LH5168V LH5168S LH5168SH LH5164AH 5164AV

    5268A

    Abstract: 28-SOP LH521002AK-2S 28SOP LH52256CVN
    Text: MEMORIES S tatic RAMs Process Capacity Configuation words Xbits 2k 16k 8 X Access time Supply current ns) MAX. Cycle time Operating, Standby (ns) MIN. !mA) MAX. (mA) MAX. Model No. Supply Operating voltage temp. 0C) m i i LH 5116/NA/D-10 100 40 0.001 5 ± 10%


    OCR Scan     		PDF 5116/NA/D-10 LH5116H/HN/HD-10 LH5116SN LH5164A/AN-80L LH5164A /AT-10L 24DIP/24SOP/24SK-DIP 24SOP 28SOP/ 5268A 28-SOP LH521002AK-2S 28SOP LH52256CVN

    LH52256-12

    Abstract: LH52256-70 2SC5072 LH52258-20 LC36256AL-10 LC36256ALL-12 LC36256ALL-70 LC36257P-10 LC36257P-12 LH52256L-90
    Text: - I 26 - 25 6K X m * tt & CC TAAC max os) TCAC max (ns) CMOS A TOE max (ns) 7 f y TOH rain (ns) TOD max (ns) S t a t i c / # R AM ( 3 2 7 6 8 X m ft TWP min (.is) TDS min (ns) TDH rain (ns) TWD min (ns) TWR m.ix (ns) V D D or V C C (V) 8) 28PIN A m I DD


    OCR Scan     		PDF C36256PL/PML-15 LC3E256AL-70 LC36255AI-85 LH52256L-90 LH52256L-90/N-90L LH5225EL-90/N-90L LH52258B-25 LH52258D-35 LH52258IM5 LH52258-20 LH52256-12 LH52256-70 2SC5072 LC36256AL-10 LC36256ALL-12 LC36256ALL-70 LC36257P-10 LC36257P-12

    LHS168

    Abstract: LH52252A LH52252
    Text: V .J 1 íVt! Static RAMs ★Under development Process Capacity Model No. Configuration Access time ns 70 -I 16k 2k Package 90 100 120 LH5116 J— I. 24 24 24 LH5116H 3 -T 24 24 24 - Z ÏÏ-J 1 24 24 24 C E , C S c o n tro l Data retention current : 0.2 pAjMAXj j


    OCR Scan     		PDF LH5116 LH5116H LH5116S LH5117 LH511 LH5118 LH5118H LH52252A LH52253 LH521002A LHS168 LH52252

    IR2E27A

    Abstract: IR2C53 IR2E02 IR2E27 IR2E10 IR3N34 IR2E31A IR2E01 IR2C07 ir2e31
    Text: lndeX Model No. ARM7D CPU Core28,32,33 ARM7DM 28,33 CMOS CMOS CMOS CMOS 76 5A A F G 44 44 44 44 ID1 series ID2 series ID3 seríes ID21K064 ID21K128 ID21K256 ID21K512 ID21M010 ID21M015 ID21M020 ID21M040 ID22K256 ID22K512 ID22M010 ID22M020 ID22M040 ID22M080


    OCR Scan     		PDF Core28 IR2C24A/AN IR2C26 IR2C30/N IR2C32 IR2C33 IR2C34 IR2C36 IR2C38/N IR2C43 IR2E27A IR2C53 IR2E02 IR2E27 IR2E10 IR3N34 IR2E31A IR2E01 IR2C07 ir2e31

    Untitled

    Abstract: No abstract text available
    Text: CMOS 256K 32K FEATURES • 32,768 x 8 bit organization • Access times: 100/120 ns (MAX. • Power consumption: Operating: 248 mW (MAX.) (T a = -40 to 85°C, minimum cycle) Standby: 5.5 (MAX.) (T a = 0 to 60°C) • Fully static operation • TTL compatible I/O


    OCR Scan     		PDF 28-pin, 600-mil 450-mil LH51256L 28-PIN 51256L5 LH51256L LH51256

    100 10L AD

    Abstract: LH521007AK-25 LH5168ST LH5168SHN lh5168 LH521002AK20
    Text: MEMORIES • S ta tic R A M s Process Capacity ★ U nderdevelopm ent Configuration words Xbits Model No. Access tim e Supply current (ns) MAX. Cycle time operating/standby ImA) MAX. (ns) MIN. Supply voltage (V) Operating temperature (1C) Package LH5116/NA/D-10


    OCR Scan     		PDF LH5116/NA/D-10 100LQFP H/AHN/AHD/AHT-10L LH5164AVN/AVT LH5164AVHN/AVHT LH5164ASHN/ASHT LH51256/N-10L LH51V1032C4M-15 LH51V1032C4M-17 LH5268A/AN/AD-1 100 10L AD LH521007AK-25 LH5168ST LH5168SHN lh5168 LH521002AK20