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    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC40V7177A p r EUN"nARV s"nwp# 7 .1 — 7.7G H z BAND lO W IN TERN A LLY MATCHED GaAs F E T DESCRIPTION The M G F C 4 0 V 7 17 7 A isa n in te rna lly im p e d a n ce -m a tch e d GaAs power FET especially designed f o r use in 7 .1 — 7 .7


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    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC40V7177A • ,n 7 .1 — 7 .7 G H z B A N D lO W IN T E R N A LLY M ATC HED GaAs FET DESCRIPTION The M G FC 40V 7177A is an internally im pedance-matched GaAs power FET especially designed fo r use in 7.1 — 7.7 GHz band amplifiers. The hermetically sealed metal-ceramic


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    MGFC40V7177A

    Abstract: pir 5 S28C
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> FC40V7177A PREUM'Ni ì ? y I * . 1 “ “ Nol««' ' 1,e»'>c'"fl,ts to cV»ân9 3 -" s°mep 7 .1 — 7 .7 G H z BAND ÎO W INTERNA LLY M ATCHED GaAs FET DESCRIPTION T h e M G F C 4 0 V 7 1 7 7 A isan internally im p e d a n c e -m a tc h e d


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    MGFC40V MGFC40V7177Aisan MGFC40V7177A pir 5 S28C PDF