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    MGFC40V Search Results

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    MGFC40V Price and Stock

    Mitsubishi Electric MGFC40V4450-61

    C BAND, GAAS, N-CHANNEL, RF POWER, JFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components MGFC40V4450-61 7
    • 1 $58.5
    • 10 $58.5
    • 100 $58.5
    • 1000 $58.5
    • 10000 $58.5
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    Mitsubishi Electric MGFC40V5964-61

    C BAND, GAAS, N-CHANNEL, RF POWER, JFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components MGFC40V5964-61 4
    • 1 $62.4
    • 10 $62.4
    • 100 $62.4
    • 1000 $62.4
    • 10000 $62.4
    		Buy Now

    MGFC40V Datasheets (21)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MGFC40V3642 Mitsubishi 3.6~4.2GHz BAND 10W INTERNALLY MATCHED GaAs FET Scan PDF
    MGFC40V3742 Mitsubishi 3.7 ~ 4.2GHz BAND 10W INTERNALLY MATCHED GaAs FET Original PDF
    MGFC40V3742 Mitsubishi Original PDF
    MGFC40V3742A Mitsubishi 3.7 - 4.2GHz BAND 10W INTERNALLY MATCHED GaAs FET Scan PDF
    MGFC40V4450 Mitsubishi 4.4 ~ 5.0GHz BAND 10 W INTERNALLY MATCHED GaAs FET Original PDF
    MGFC40V4450 Mitsubishi Original PDF
    MGFC40V4450A Mitsubishi 4.4 - 5.0GHz BAND 10W INTERNALLY MATCHED GaAs FET Scan PDF
    MGFC40V5258 Mitsubishi 5.2 - 5.8GHz BAND 10W INTERNALLY MATCHED GaAs FET Original PDF
    MGFC40V5258 Mitsubishi 5.2 - 5.8GHz BAND 10W INTERNALLY MATCHED GaAs FET Scan PDF
    MGFC40V5964 Mitsubishi 5.9 ~ 6.4GHz BAND 10W INTERNALLY MATCHED GaAs FET Original PDF
    MGFC40V5964 Mitsubishi Original PDF
    MGFC40V5964A Mitsubishi 5.9-6.4 GHz BAND 10W INTERNALLY MATCHED GaAs FET Scan PDF
    MGFC40V6472 Mitsubishi 6.4 - 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET Original PDF
    MGFC40V6472 Mitsubishi 6.4 - 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET Scan PDF
    MGFC40V6472A Mitsubishi 6.4-7.2 GHz BAND 10W Internally Matched GaAs FET Scan PDF
    MGFC40V7177 Mitsubishi 7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET Scan PDF
    MGFC40V7177A Mitsubishi 7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET Scan PDF
    MGFC40V7177B Mitsubishi 7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET Scan PDF
    MGFC40V7785 Mitsubishi 7.7 - 8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET Scan PDF
    MGFC40V7785A Mitsubishi 7.7 - 8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET Scan PDF

    MGFC40V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MGFC40V3742

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V3742 3.7 ~ 4.2GHz BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters inches 24+/-0.3 R1.25 (1) 0.6+/-0.15 2MIN The MGFC40V3742 is an internally impedance-matched GaAs power FET especially designed for use in 3.7 ~ 4.2


    Original     		PDF MGFC40V3742 MGFC40V3742 29dBm 10MHz June/2004

    MGFC40V3742

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V3742 3.7 ~ 4.2GHz BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters inches 24+/-0.3 R1.25 (1) 0.6+/-0.15 2MIN The MGFC40V3742 is an internally impedance-matched GaAs power FET especially designed for use in 3.7 ~ 4.2


    Original     		PDF MGFC40V3742 MGFC40V3742 29dBm 10MHz

    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC40V5258 5.2 - 5.8 GHz BAND / 10W OUTLINE DRAWING DESCRIPTION The MGFC40V5258 is an internally impedance-matched GaAs power FET especially designed for use in 5.2 – 5.8 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFC40V5258 MGFC40V5258

    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC40V7177 7.1 – 7.7 GHz BAND / 10W OUTLINE DRAWING DESCRIPTION The MGFC40V7177 is an internally impedance-matched GaAs power FET especially designed for use in 7.1 – 7.7 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFC40V7177 MGFC40V7177 50ohm

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V6472 6.4 - 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The MGFC40V6472A is an internally impedance matched GaAs power FET especially designed for use in 6.4 - 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFC40V6472 MGFC40V6472A Item-51] 10MHz

    5.8 ghz amplifier 10w

    Abstract: Gaas Power Amplifier 10W
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V5258 5.2 - 5.8GHz BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters 24+/-0.3 R1.25 1 0.6+/-0.15 2MIN The MGFC40V5258 is an internally impedance-matched GaAs power FET especially designed for use in 5.2 - 5.8


    Original     		PDF MGFC40V5258 MGFC40V5258 25deg June/2004 5.8 ghz amplifier 10w Gaas Power Amplifier 10W

    5.8 ghz amplifier 10w

    Abstract: MGFC40V5258
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V5258 5.2 - 5.8GHz BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters 24+/-0.3 R1.25 1 0.6+/-0.15 2MIN The MGFC40V5258 is an internally impedance-matched GaAs power FET especially designed for use in 5.2 - 5.8


    Original     		PDF MGFC40V5258 MGFC40V5258 June/2004 5.8 ghz amplifier 10w

    5.8GHz

    Abstract: 5.8 ghz amplifier 10w MGFC40V5258
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V5258 5.2 - 5.8GHz BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters 24+/-0.3 R1.25 1 0.6+/-0.15 2MIN The MGFC40V5258 is an internally impedance-matched GaAs power FET especially designed for use in 5.2 - 5.8


    Original     		PDF MGFC40V5258 MGFC40V5258 25deg 5.8GHz 5.8 ghz amplifier 10w

    GaAs FET

    Abstract: MGFC40V7177
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V7177 7.1 ~ 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC June/2004


    Original     		PDF MGFC40V7177 June/2004 GaAs FET MGFC40V7177

    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC40V6472 6.4 – 7.2 GHz BAND / 10W OUTLINE DRAWING DESCRIPTION The MGFC40V6472 is an internally impedance-matched GaAs power FET especially designed for use in 6.4 – 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFC40V6472 MGFC40V6472 50ohm

    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC40V7785 7.7 – 8.5 GHz BAND / 10W OUTLINE DRAWING DESCRIPTION The MGFC40V7785 is an internally impedance-matched GaAs power FET especially designed for use in 7.7 – 8.5 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFC40V7785 MGFC40V7785 50ohm

    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC40V7177 7.1 – 7.7 GHz BAND / 10W OUTLINE DRAWING DESCRIPTION The MGFC40V7177 is an internally impedance-matched GaAs power FET especially designed for use in 7.1 – 7.7 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFC40V7177 MGFC40V7177 -45dBc 29dBm

    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC40V3742 3.7 – 4.2 GHz BAND / 10W OUTLINE DRAWING DESCRIPTION The MGFC40V3742 is an internally impedance-matched GaAs power FET especially designed for use in 3.7 – 4.2 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFC40V3742 MGFC40V3742 -45dBc 29dBm

    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC40V5964 5.9 – 6.4 GHz BAND / 10W OUTLINE DRAWING DESCRIPTION The MGFC40V5964 is an internally impedance-matched GaAs power FET especially designed for use in 5.9 – 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFC40V5964 MGFC40V5964 -49dBc 29dBm

    MGFC40V6472A

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> c 6.4 - 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The MGFC40V6472A is an internally impedance matched GaAs power FET especially designed for use in 6.4 - 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFC40V6472A Item-51] 10MHz

    MGFC40V4450

    Abstract: Gaas Power Amplifier 10W
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V4450 4.4 ~ 5.0GHz BAND 10 W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters inches 24+/-0.3 R1.25 (1) 0.6+/-0.15 2MIN The MGFC40V4450 is an internally impedance-matched GaAs power FET especially designed for use in 4.4 ~ 5.0


    Original     		PDF MGFC40V4450 MGFC40V4450 29dBm 10MHz Gaas Power Amplifier 10W

    MGFC40V3742

    Abstract: MGFC40V5964
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V5964 5.9 ~ 6.4GHz BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters inches 24+/-0.3 R1.25 (1) 0.6+/-0.15 2MIN The MGFC40V3742 is an internally impedance-matched GaAs power FET especially designed for use in 5.9 ~ 6.4


    Original     		PDF MGFC40V5964 MGFC40V3742 29dBm 10MHz June/2004 MGFC40V5964

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V5964 5.9 ~ 6.4GHz BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC40V3742 is an internally impedance-matched GaAs power FET especially designed for use in 5.9 ~ 6.4 GHz band amplifiers.The hermetically sealed metal-ceramic


    Original     		PDF MGFC40V5964 MGFC40V3742 29dBm 10MHz June/2004

    MGFC40V6472

    Abstract: pir 428
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V6472 6 . 4 — 7.2G H z BAND 1 0 W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAW ING The M G F C 4 0 V 6 4 7 2 is an internally impedance-matched GaAs power F E T especially designed fo r use in 6 . 4 - 7 . 2


    OCR Scan     		PDF MGFC40V6472 MGFC40V6472 ltem-01: ltem-511 pir 428

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40VS2S8 5 .2 ~ 5 .8 G H z BAND 1 0 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F C 4 0 V 5 2 5 8 is an internally impedance-matched GaAs power FET especially designed for use in 5 . 2 - 5 . 8 GHz band amplifiers. The hermetically sealed metal-ceramic


    OCR Scan     		PDF MGFC40VS2S8

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V7177 7.1—7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The M GFC40V7177 is an internally impedance-matched GaAs power FET especially designed for use in 7 .1 —7.7 GHz band amplifiers. The hermetically sealed metal-ceramic


    OCR Scan     		PDF MGFC40V7177 GFC40V7177 27C102P, RV-15 16-BIT)

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V7177 7 .1 —7.7G Hz BAND 1 0W INTERNALLY MATCHED GaAs FET DESCRIPTION T h e M G F C 4 0 V 7 1 7 7 is an in te rn a lly im pedance-m atched G aA s po w er F E T especially designed fo r use in 7 .1 - 7 . 7 G H z band a m p lifie rs . T h e h e rm e tic a lly sealed m etal-ceram ic


    OCR Scan     		PDF MGFC40V7177

    MGFC40V7177A

    Abstract: pir 5 S28C
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V7177A PREUM'Ni ì ? y I * . 1 “ “ Nol««' ' 1,e»'>c'"fl,ts to cV»ân9 3 -" s°mep 7 .1 — 7 .7 G H z BAND ÎO W INTERNA LLY M ATCHED GaAs FET DESCRIPTION T h e M G F C 4 0 V 7 1 7 7 A isan internally im p e d a n c e -m a tc h e d


    OCR Scan     		PDF MGFC40V MGFC40V7177Aisan MGFC40V7177A pir 5 S28C

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> p b ê u m w a MGFC40V7177A *? , 7.1~7.7GHi BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F C 4 0 V 7 17 7 A is an internally im pedance-m atched GaAs power FET especially designed fo r use in 7.1 — 7 ,7 GHz band amplifiers. The herm etically sealed metal-ceramic


    OCR Scan     		PDF MGFC40V7177A