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Rochester Electronics LLC FDU6N50TU MOSFET N-CH 500V 6A I-PAK
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DigiKey	FDU6N50TU	Bulk			671	1 - 10 - 100 - 1000 $0.45 10000 $0.45	Buy Now
onsemi FDU6N50TU MOSFET N-CH 500V 6A IPAK
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DigiKey	FDU6N50TU	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Fairchild Semiconductor Corporation FDU6N50TU Power Field-Effect Transistor, 6A, 500V, 0.9ohm, N-Channel, MOSFET '
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	FDU6N50TU		9,586		1	1 $0.4301 10 $0.4301 100 $0.4043 1000 $0.3656 10000 $0.3656	Buy Now

FDU6N50 Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
FDU6N50		Fairchild Semiconductor	500V N-Channel MOSFET		Original	PDF
FDU6N50F		Fairchild Semiconductor	N-Channel MOSFET 500V, 5.5A, 1.15 Ohm		Original	PDF
FDU6N50TU		Fairchild Semiconductor	500V N-Channel MOSFET		Original	PDF

FDU6N50 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
FDD6N50F Abstract: FDD6N50FTF FDD6N50FTM FDU6N50F FDU6N50FTU failchild 6A04 Text: UniFETTM FDD6N50F / FDU6N50F tm N-Channel MOSFET 500V, 5.5A, 1.15Ω Features Description • RDS on = 1.0Ω ( Typ.)@ VGS = 10V, ID = 2.75A These N-Channel enhancement mode power field effect transistors are produced using Failchild’s proprietary, planar	Original	FDD6N50F FDU6N50F FDU6N50F FDD6N50FTF FDD6N50FTM FDU6N50FTU failchild 6A04	PDF
FDD6N50 Abstract: No abstract text available Text: UniFET TM FDD6N50/FDU6N50 500V N-Channel MOSFET Features Description • 6A, 500V, RDS on = 0.9Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 12.8 nC)	Original	FDD6N50/FDU6N50 FDD6N50	PDF
FDD6N50 Abstract: No abstract text available Text: FDD6N50 / FDU6N50 N-Channel UniFETTM MOSFET 500 V, 6 A, 900 mΩ Features Description • RDS on = 900 mΩ (Max.) @ VGS = 10 V, ID = 3 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to	Original	FDD6N50 FDU6N50	PDF
FDD6N50TM Abstract: FDD6N50 Text: FDD6N50/ FDU6N50 N-Channel UniFETTM MOSFET 500 V, 6 A, 900 m Features Description • RDS on = 900 m (Max.) @ VGS = 10 V, ID = 3 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology.	Original	FDD6N50/ FDU6N50 FDU6N50 FDD6N50TM FDD6N50	PDF
FDD6N50 Abstract: No abstract text available Text: UniFETTM FDD6N50F / FDU6N50F tm N-Channel MOSFET 500V, 5.5A, 1.15Ω Features Description • RDS on = 0.95Ω ( Typ.)@ VGS = 10V, ID = 2.75A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar	Original	FDD6N50F FDU6N50F FDD6N50	PDF
Untitled Abstract: No abstract text available Text: UniFETTM FDD6N50F / FDU6N50F tm N-Channel MOSFET 500V, 5.5A, 1.15Ω Features Description • RDS on = 0.95Ω ( Typ.)@ VGS = 10V, ID = 2.75A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar	Original	FDD6N50F FDU6N50F FDU6N50F	PDF
FDD6N50TF Abstract: FDD6N50 FDD6N50TM FDU6N50 FDU6N50TU Text: UniFET TM FDD6N50/FDU6N50 500V N-Channel MOSFET Features Description • 6A, 500V, RDS on = 0.9Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 12.8 nC)	Original	FDD6N50/FDU6N50 FDD6N50TF FDD6N50 FDD6N50TM FDU6N50 FDU6N50TU	PDF
FDD6N50FTM Abstract: FDU6N50F FDU6N50FTU FDD6N50F FDD6N50FTF Text: UniFETTM FDD6N50F / FDU6N50F tm N-Channel MOSFET 500V, 5.5A, 1.15Ω Features Description • RDS on = 0.95Ω ( Typ.)@ VGS = 10V, ID = 2.75A These N-Channel enhancement mode power field effect transistors are produced using Failchild’s proprietary, planar	Original	FDD6N50F FDU6N50F FDU6N50F FDD6N50FTM FDU6N50FTU FDD6N50FTF	PDF
interleaved Boost PFC Abstract: RG44 FDA18N50 FDPF5N50FT FDPF12N50FT fdpf16n50t FDA16N50 FDB12N50 FQA16N50 FDD6N50 Text: www.fairchildsemi.com AN-9066 UniFET — Optimized Switch for Discontinuous Current Mode Power Factor Correction Abstract This application note discusses merits of planar technology power MOSFET in discontinuous current mode power factor correction application. In most test conditions it is	Original	AN-9066 interleaved Boost PFC RG44 FDA18N50 FDPF5N50FT FDPF12N50FT fdpf16n50t FDA16N50 FDB12N50 FQA16N50 FDD6N50	PDF