FDD6N50F
Abstract: FDD6N50FTF FDD6N50FTM FDU6N50F FDU6N50FTU failchild 6A04
Text: UniFETTM FDD6N50F / FDU6N50F tm N-Channel MOSFET 500V, 5.5A, 1.15Ω Features Description • RDS on = 1.0Ω ( Typ.)@ VGS = 10V, ID = 2.75A These N-Channel enhancement mode power field effect transistors are produced using Failchild’s proprietary, planar
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FDD6N50F
FDU6N50F
FDU6N50F
FDD6N50FTF
FDD6N50FTM
FDU6N50FTU
failchild
6A04
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FDD6N50
Abstract: No abstract text available
Text: UniFETTM FDD6N50F / FDU6N50F tm N-Channel MOSFET 500V, 5.5A, 1.15Ω Features Description • RDS on = 0.95Ω ( Typ.)@ VGS = 10V, ID = 2.75A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar
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FDD6N50F
FDU6N50F
FDD6N50
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Untitled
Abstract: No abstract text available
Text: UniFETTM FDD6N50F / FDU6N50F tm N-Channel MOSFET 500V, 5.5A, 1.15Ω Features Description • RDS on = 0.95Ω ( Typ.)@ VGS = 10V, ID = 2.75A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar
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FDD6N50F
FDU6N50F
FDU6N50F
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FDD6N50FTM
Abstract: FDU6N50F FDU6N50FTU FDD6N50F FDD6N50FTF
Text: UniFETTM FDD6N50F / FDU6N50F tm N-Channel MOSFET 500V, 5.5A, 1.15Ω Features Description • RDS on = 0.95Ω ( Typ.)@ VGS = 10V, ID = 2.75A These N-Channel enhancement mode power field effect transistors are produced using Failchild’s proprietary, planar
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Original
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FDD6N50F
FDU6N50F
FDU6N50F
FDD6N50FTM
FDU6N50FTU
FDD6N50FTF
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