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    GRM3195C1E103JA01 Price and Stock

    Murata Manufacturing Co Ltd GRM3195C1E103JA01D

    CAP CER 10000PF 25V C0G/NP0 1206
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    DigiKey GRM3195C1E103JA01D Digi-Reel 14,951 1
    • 1 $0.59
    • 10 $0.357
    • 100 $0.2321
    • 1000 $0.16616
    • 10000 $0.16616
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    GRM3195C1E103JA01D Cut Tape 14,951 1
    • 1 $0.59
    • 10 $0.357
    • 100 $0.2321
    • 1000 $0.16616
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    GRM3195C1E103JA01D Reel 12,000 4,000
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    Avnet Americas GRM3195C1E103JA01D Reel 10 Weeks 20,000
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    Mouser Electronics GRM3195C1E103JA01D 16,849
    • 1 $0.51
    • 10 $0.264
    • 100 $0.18
    • 1000 $0.15
    • 10000 $0.12
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    Bristol Electronics GRM3195C1E103JA01D 4,000
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    Quest Components GRM3195C1E103JA01D 3,200
    • 1 $0.795
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    • 1000 $0.2385
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    GRM3195C1E103JA01D 89
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    Avnet Abacus GRM3195C1E103JA01D Reel 18 Weeks 4,000
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    Chip-Germany GmbH GRM3195C1E103JA01D 166
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    Murata Manufacturing Co Ltd GRM3195C1E103JA01J

    CAP CER 10000PF 25V C0G/NP0 1206
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey GRM3195C1E103JA01J Reel 10,000
    • 1 -
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    • 10000 $0.12545
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    Avnet Americas GRM3195C1E103JA01J Reel 12 Weeks 10,000
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    • 10000 $0.11397
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    Mouser Electronics GRM3195C1E103JA01J
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    • 10000 $0.122
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    GRM3195C1E103JA01 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    GRM3195C1E103JA01D muRata Ceramic Capacitors, Capacitors, CAP CER 10000PF 25V 5% NP0 1206 Original PDF
    GRM3195C1E103JA01J muRata Ceramic Capacitors, Capacitors, CAP CER 10000PF 25V 5% NP0 1206 Original PDF

    GRM3195C1E103JA01 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Capacitors > Monolithic Ceramic Capacitors > Soldering Electrode GRM15/18/21/31 Data Sheet Monolithic Ceramic Capacitors GRM3195C1E103JA01p 1206, C0G, 10000pF, 25Vdc p: packaging code g e T e L W (in mm) • Dimensions ■ Packaging Length L 3.20mm±0.15mm


    Original     		GRM15/18/21/31 GRM3195C1E103JA01p 10000pF, 25Vdc) 180mm 330mm 30ppm/ 10000pF 25Vdc PDF

    Untitled

    Abstract: No abstract text available
    Text: Capacitors > Monolithic Ceramic Capacitors Data Sheet Monolithic Ceramic Capacitors GRM3195C1E103JA01p 1206, C0G, 10000pF, 25Vdc p: packaging code RoHS regulation conformity parts g e T e L W (in mm) • Dimensions ■ Packaging Length L 3.2mm±0.15mm Code


    Original     		GRM3195C1E103JA01p 10000pF, 25Vdc) 180mm 330mm 30ppm/ 10000pF 25Vdc PDF

    Untitled

    Abstract: No abstract text available
    Text: CHIP MONOLITHIC CERAMIC CAPACITOR FOR GENERAL GRM3195C1E103JA01_ 1206, C0G, 10000pF, 25Vdc _: packaging code Reference Sheet 1.Scope This product specification is applied to Chip Monolithic Ceramic Capacitor used for General Electronic equipment.


    Original     		GRM3195C1E103JA01_ 10000pF, 25Vdc) JEMCGC-2701V PDF

    Untitled

    Abstract: No abstract text available
    Text: Capacitors > Monolithic Ceramic Capacitors Data Sheet Monolithic Ceramic Capacitors GRM3195C1E103JA01p 1206, C0G, 10000pF, 25Vdc p: packaging code RoHS regulation conformity parts g e T e L W (in mm) • Dimensions ■ Packaging Length L 3.2mm±0.15mm Code


    Original     		GRM3195C1E103JA01p 10000pF, 25Vdc) 180mm 330mm 30ppm/ 10000pF 25Vdc PDF

    GRM55DR72J224KW01L

    Abstract: gcm31c GCM31MR71H474KA37 GRM32B7U3D221JW31L LLC219R71C104MA01L GCM216 GCM155 GCM31MR71H334KA37 GRM188 GCM188
    Text: Capacitors Monolithic Ceramic Capacitors GCM_R7 X7R High Dielectric Constant Type X7R 10/16/25/50V g e T e L Part Number GCM033 GCM155 GCM188* GCM216 GCM219 GCM21B GCM319 GCM31M GCM31C GCM32N GCM32R GCM32D GCM32E GCM43R GCM43E GCM55R L 0.6 ±0.03 1.0 ±0.05


    Original     		10/16/25/50V GCM033 GCM155 GCM188* GCM216 GCM219 GCM21B GCM319 GCM31M GCM31C GRM55DR72J224KW01L gcm31c GCM31MR71H474KA37 GRM32B7U3D221JW31L LLC219R71C104MA01L GCM216 GCM155 GCM31MR71H334KA37 GRM188 GCM188 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VS25L Rev. 0, 10/2012 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25LR5 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to


    Original     		MRFE6VS25L MRFE6VS25LR5 PDF

    D260-4118-0000

    Abstract: MRFE6VS25L MRFE6VS25GNR1 transistor J128 2422D 21-201-J ATC100B2R7BT500XT crcw12065k60f avx c0805c103k5rac MRFE6VS25NR1
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VS25N Rev. 1, 12/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to


    Original     		MRFE6VS25N MRFE6VS25NR1 MRFE6VS25GNR1 MRFE6VS25N D260-4118-0000 MRFE6VS25L MRFE6VS25GNR1 transistor J128 2422D 21-201-J ATC100B2R7BT500XT crcw12065k60f avx c0805c103k5rac PDF

    ATC600S3R3BT250XT

    Abstract: ON SEMICONDUCTOR J122
    Text: Freescale Semiconductor Technical Data Document Number: MW7IC008N Rev. 2.1, 3/2012 RF LDMOS Wideband Integrated Power Amplifier MW7IC008NT1 The MW7IC008N wideband integrated circuit is designed with on-chip matching that makes it usable from 20 to 1000 MHz. This multi-stage


    Original     		MW7IC008N MW7IC008NT1 ATC600S3R3BT250XT ON SEMICONDUCTOR J122 PDF

    GRM3195C1H223JA01

    Abstract: GRM1887 GRM1885C2A680JA01 30pFM GRM1555C1H1R0JZ01 GRM1885C1H1R GRM31C5C1E104J GRM1885C2A470JA01 GRM1555C1H3R6GZ01 GRM21B5C1H223J
    Text: Capacitors Monolithic Ceramic Capacitors Temperature Compensating EIA Temperature Compensating Type 25/50V g e T e L Part Number GRM155 GRM188* GRM216 GRM219 GRM21A GRM21B GRM316 GRM319 GRM31M GRM31C W Dimensions mm L W T e 1.0 ±0.05 0.5 ±0.05 0.5 ±0.05 0.15 to 0.3


    Original     		25/50V GRM155 GRM188* GRM216 GRM219 GRM21A GRM21B GRM316 GRM319 GRM31M GRM3195C1H223JA01 GRM1887 GRM1885C2A680JA01 30pFM GRM1555C1H1R0JZ01 GRM1885C1H1R GRM31C5C1E104J GRM1885C2A470JA01 GRM1555C1H3R6GZ01 GRM21B5C1H223J PDF

    ATC600S3R3BT250XT

    Abstract: MW7IC008NT1 Test Circuit Component Layout ATC600S2R MW7IC008NT1 AN1987 3843 GRM3195C1E103JA01 ATC600S2R2CT250XT MW7IC008N A115
    Text: Freescale Semiconductor Technical Data Document Number: MW7IC008N Rev. 1, 9/2009 RF LDMOS Wideband Integrated Power Amplifier MW7IC008NT1 The MW7IC008N wideband integrated circuit is designed with on - chip matching that makes it usable from 100 to 1000 MHz. This multi - stage


    Original     		MW7IC008N MW7IC008NT1 MW7IC008N ATC600S3R3BT250XT MW7IC008NT1 Test Circuit Component Layout ATC600S2R MW7IC008NT1 AN1987 3843 GRM3195C1E103JA01 ATC600S2R2CT250XT A115 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MW7IC008N Rev. 2.1, 3/2012 RF LDMOS Wideband Integrated Power Amplifier MW7IC008NT1 The MW7IC008N wideband integrated circuit is designed with on-chip matching that makes it usable from 20 to 1000 MHz. This multi-stage


    Original     		MW7IC008N MW7IC008NT1 MW7IC008N PDF

    D260-4118-0000

    Abstract: 0119A 0190A
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VS25L Rev. 0, 10/2012 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25LR5 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to


    Original     		MRFE6VS25L MRFE6VS25LR5 D260-4118-0000 0119A 0190A PDF

    ATC600S3R3BT250XT

    Abstract: J376 MW7IC008 vgls
    Text: Freescale Semiconductor Technical Data Document Number: MW7IC008N Rev. 0, 8/2009 RF LDMOS Wideband Integrated Power Amplifier MW7IC008NT1 The MW7IC008N wideband integrated circuit is designed with on - chip matching that makes it usable from 100 to 1000 MHz. This multi - stage


    Original     		MW7IC008N MW7IC008NT1 ATC600S3R3BT250XT J376 MW7IC008 vgls PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MW7IC008N Rev. 3, 12/2013 RF LDMOS Wideband Integrated Power Amplifier MW7IC008NT1 The MW7IC008N wideband integrated circuit is designed with on-chip matching that makes it usable from 20 to 1000 MHz. This multi-stage


    Original     		MW7IC008N MW7IC008NT1 MW7IC008N PDF