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Untitled Abstract: No abstract text available Text: "HYUNDAI HYM532220A W-Series 2M X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532220A is a 2M x 32-bit Fast page mode CMOS DRAM module consisting of four HY5118160B in 42/42 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22\|iF decoupling capacitor is mourtted for	OCR Scan	HYM532220A 32-bit HY5118160B HYM532220AW/SLW/TW/SLTW HYM532220AWG/SLWG 880mW 825mW 70MIN.	PDF
Untitled Abstract: No abstract text available Text: "H YU NDA I HYM532220A E-Series 2M x 32-bit CMOS DRAM MODULE DESCRIPTION The HVM532220A is a 2M x 32-bit Fast Page mode CMOS DRAM module consisting of four HY5117800B in 28/28 pin SOJ or TSOPII and an AND gate in 16 pin SOP on a 72pin glass-epoxy printed circuit board. 0.22 iFdecoupling	OCR Scan	HYM532220A 32-bit HVM532220A HY5117800B 72pin HYM532220AE/ASLE/ATE/ASLTE HYM532220AEG/ASLEG/ATEG/ASLTEG DQ0-DQ31) 1CE13-10-DEC	PDF
Untitled Abstract: No abstract text available Text: HYM532220 X-Series “H Y U N D A I 2M X 32-bit CMOS DRAM MODULE DESCRIPTION The H Y M 532 220 is a 2M x 3 2 -bit Fast page m ode C M O S DRAM m odule consisting of four H Y 5 1 18160 in 44/50 pin TS O P II on a 72 Zig Zag Dual tabs pin glass-epoxy printed circuit board. 0.2 2\|iF decoupling capacitor is m ounted	OCR Scan	HYM532220 32-bit 532220TX DQ0-DQ31) 1DD01-10-FEB95 HYMS32220/SL HYM532220TXG HYM532220SLTXG	PDF
HYM532220WG Abstract: HYM532220 9 bit SIMM pins Text: -HYUNDAI HYM532220 W-Series 2M x 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532220 is a 2M x 32-bit Fast page m ode CMOS DRAM m odule consisting of four HY5118160 in 42/42 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22^F decoupling capacitor is mounted for each	OCR Scan	HYM532220 32-bit HY5118160 HYM532220W/SLW/TW/SLTW HYM532220WG/SLWG HYM532220/SL HYM532220T/SLT HYM532220WG 9 bit SIMM pins	PDF
HYM532220WG70 Abstract: HYM532220W70 HYM532220 HY5118160 hym532220wg-70 hym532220w-70 000ws oec94 HYM53 Text: «HYUNDAI HYM532220 W-Series 2M x 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532220 is a 2M x 32-bit Fast page mode CMOS DRAM module consisting of four HY5118160 in 42/42 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22\|iF decoupling capacitor is mounted for each	OCR Scan	HYM532220 32-bit HY5118160 HYM532220W/SLW/TW/SLTW HYM532220WG/SLWG 050i1J7) HVM532220T/SLT Mb750fla HYM532220WG70 HYM532220W70 hym532220wg-70 hym532220w-70 000ws oec94 HYM53	PDF
Untitled Abstract: No abstract text available Text: ‘ HYUNDAI HYM532220A E-Series 2M X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532220A is a 2M x 32-bit Fast Page mode CMOS ORAM module consisting of four HY5117800B in 28/28 pin SOJ or TSOPII and an AND gate in 16 pin SOP on a 72 pin giass-epoxy printed circuit board. 0.22nFdecoupling	OCR Scan	HYM532220A 32-bit HY5117800B 22nFdecoupling HYM532220AE/ASLE/ATE/ASLTE HYM532220AEG/ASLEG/ATEG/ASLTEG l25f3 17lMIN.	PDF
Untitled Abstract: No abstract text available Text: •'H Y U N D A I HYM532220A W-Series 2M X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532220A is a 2M x 32-bit Fast page mode CMOS DRAM module consisting of four HY5118160B in 42/42 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22nF decoupling capacitor is mourlted for	OCR Scan	HYM532220A 32-bit HY5118160B HYM532220AW/SLW/TW/SLTW HYM532220AWG/SLWG 880mW 825mW 770mW	PDF
HYM532220SLTW Abstract: HYM532220 HY5118160 Text: •HYUNDAI HYM532220 W-Series 2M X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532220 is a 2M x 32-bit Fast page mode CMOS DRAM module consisting of four HY5118160 in 42/42 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22\|iF decoupling capacitor is mounted for each	OCR Scan	HYM532220 32-bit HY5118160 HYM532220W/SLW/TW/SLTW HYM532220WG/SLWG 250t6 4b75Dflû 1CD07-10-DEC94 HYM532220SLTW	PDF
VG264265B Abstract: TC5117405CSJ hyundai cross reference guide TC51V16160 Micron 4MX32 EDO SIMM dram cross reference cross reference tc5117800cft SAMSUNG Cross Reference Text: Cross Reference Guide 1.3. Cross Reference Guide 1.3.1. Cross Reference of 256kxl6 DRAM Vendors\Configuration VIS Hitachi Hyundai Micron Motorola NEC Samsung Toshiba TI 256kxl6, 5V, EDO VG264265B HM514265D HY514264B MT4C16270 N/A PD4244265LE KM416C254D TC5144265D	OCR Scan	256kxl6 256kxl6, VG264265B HM514265D HY514264B MT4C16270 uPD4244265LE KM416C254D TC5144265D TC5117405CSJ hyundai cross reference guide TC51V16160 Micron 4MX32 EDO SIMM dram cross reference cross reference tc5117800cft SAMSUNG Cross Reference	PDF
HYM532814 Abstract: HY531000AJ HYM532224 hy5118160bjc HYM532214AE60 HY5118160 HYM536A814BM HYM536100AM HY51178048J HY5118160JC Text: QUICK REFERENCE SIMM MODULE 5V SIMM TYPE SIZE 72 Pin 4MB DESCRIPTION 1M X 32 8 IM M 1Mx36 8M B 2M 2M 16MB 4M 4M 32M B 8M 8M NO TE : 4 X X X X X X 32 36 32 36 32 36 PART NO. SPEED REF. DEVICE USED HEIGHT EDO, S L HYM532124AW/ATW 60/70/80 IK HY5118164BUC/BTC x 2	OCR Scan	HYM532124AW/ATW 532100AM HYM532120W/TW HYMS32120AW/ATW HY5118164BUC/BTC HY514400AJ HY5118160JC/TC HY5118160BJC/BTC HY531000AJ HYM532814 HYM532224 hy5118160bjc HYM532214AE60 HY5118160 HYM536A814BM HYM536100AM HY51178048J HY5118160JC	PDF
HYM532814 Abstract: TRA8 L HYM536410 HYM532100AM HYM532100 Text: TIMING DIAGRAM INDEX E D O 4-Byte SIMM HYM532124AW HYM532224AW . . . . . . 1Mx32 EDO 2Mx32 EDO 2Mx32 EDO 1Mx 16 based . . . . . 1Mx 16 based . . . . . 2Mx8 based . . . . . EDO TIMING DIAGRAM -1 EDO TIMING DIAGRAM -1 . .	OCR Scan	HYM532124AW HYM532224AW HYM532224AE HYM532214AE HYM532414AM HYM532414BM 1Mx32 2Mx32 HYM532814 TRA8 L HYM536410 HYM532100AM HYM532100	PDF
HYM536100AM Abstract: HYM532814 4Mx4 dram simm HYM532100AM 1MX32 HYM532120W HYM532224 HYM536410 HYM536410AM HYM532200AM Text: TABLE OF CONTENTS 1. INDEX 1 Table of C ontents. 2. PRODUCT QUICK GUIDE Ordering In fo rm atio n . Quick Reference . How and What to know as reading Part No.	OCR Scan	HYM532124AW HYM532224AW HYM532224AE HYM532214AE HYM532414AM HYM532414BM HYM536A414AM HYM536A414BM HYM532814AM HYM532814BM HYM536100AM HYM532814 4Mx4 dram simm HYM532100AM 1MX32 HYM532120W HYM532224 HYM536410 HYM536410AM HYM532200AM	PDF
st z7m Abstract: SO DIMM 72-pin C5401 PI-33 Text: TIMING DIAGRAM INDEX DRAM MODULE 3.3V DIMM TYPE SIZE 8-Byta 8MB DESCRIPTION 1M X 64 EDO, SL DIMM 168 Pin FPM, SL 1M X 72 FPM, SL FPM, SL, ECC 16MB 2M X 64 EDO, SL FPM, SL 2M 32MB X 72 FPM, SL, ECC 4M X 64 EDO, SL FPM, SL 4M X 72 EDO, SL, ECC FPM, SL, ECC	OCR Scan	HYM5V64104AX/ATX HYM5V64124AX/ATX HYMSV64100AN/ATN HYMSV641OOAX/ATX 1WCHQ11 1CWU351, st z7m SO DIMM 72-pin C5401 PI-33	PDF
HY5118160JC Abstract: HY531000AJ HY-53 HYM591000B HYM536100AM HYM532120W Text: As of ’96.3Q TYPE SIZE 30 Pin 1MB SIMM DESCRIPTION. PART NO. SPEEp- R EF. D EV ICE U S E D 1M <8 FPM ,L HYM581000BM 50/60/70 IK HY514400AJ x 2 1M <9 FPM ,L HYM591000BM 60/70 IK HY514400AJX2 4M <8 FPM ,L HYM584000AM 50/60/70 IK HY514100AJ x 8 FPM .SL HYM584000DM	OCR Scan	HYM581000BM HYM591000BM SPEEp50/60/70 HY514400AJ HY514400AJX2 HY531000AJX1 HYM584000AM HYM584000DM HYM594000AM HYM594000DM HY5118160JC HY531000AJ HY-53 HYM591000B HYM536100AM HYM532120W	PDF