HY5117400B
Abstract: HY514100A
Text: HYM536410B M-Series 4Mx36 bit FP DRAM MODULE based on 4Mx4 DRAM, with Parity, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM536410B M-Series is a 4Mx36-bit Fast Page mode CMOS DRAM module consisting of eight HY5117400B in 24/26 pin SOJ and four HY514100A in 20/26 pin SOJ on a 72 pin glass-epoxy printed
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HYM536410B
4Mx36
4Mx36-bit
HY5117400B
HY514100A
HYM536410BM
HYM536410BMG
72-Pin
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HYM536410AMG
Abstract: hym536410am HY5117400A HY514100A
Text: HYM536410A M-Series 4Mx36-bit CMOS DRAM MODULE DESCRIPTION The HYM536410A is a 4M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY5117400A in 24/26 pin SOJ or TSOPII and four HY514100A in 20/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22§ Þdecoupling are mounted for each DRAM. The HYM536410AM / ASLM / ATM /
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HYM536410A
4Mx36-bit
36-bit
HY5117400A
HY514100A
HYM536410AM
HYM536410AMG
1CE11-10-DEC94
HY5117400A
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HYM536410
Abstract: HY5117400C HY514100A HYM536410C HYM536410CM HYM536410CMG 4MX36
Text: HYM536410C M-Series 4Mx36 bit FP DRAM MODULE based on 4Mx4 DRAM, with Parity, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM536410C M-Series is a 4Mx36-bit Fast Page mode CMOS DRAM module consisting of eight HY5117400C in 24/26 pin SOJ and four HY514100A in 20/26 pin SOJ on a 72 pin glass-epoxy printed
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HYM536410C
4Mx36
4Mx36-bit
HY5117400C
HY514100A
HYM536410CM
HYM536410CMG
72-Pin
HYM536410
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HYM536410AM70
Abstract: KMM5364103AK-6 KMM53632000AKA-60 KMM53632000AK-6U KMM5364103AK-70 KMM53632000AK6 KMM5362003C-60 4MX36 KMM53616000AK 16MX36
Text: Page 1 12/09/97 AP450GX MP Server System 12/9/97 The following tables list SIMM/DIMM devices known to be compatible with the specified Intel platforms. In general, SIMM devices, which are faster than those specified for a given platform, will work although no extra performance will be realized. The memory devices
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AP450GX
HYM536410AM70
KMM5364103AK-6
KMM53632000AKA-60
KMM53632000AK-6U
KMM5364103AK-70
KMM53632000AK6
KMM5362003C-60
4MX36
KMM53616000AK
16MX36
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HYM536410MG
Abstract: No abstract text available
Text: HYM536410 M -Series •HYUN DAI 4M X 36-blt CMOS DRAM MODULE DESCRIPTION The HYM536410 is a 4M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY5117400 in 24/28 pin SOJ and four HY514100A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22pF decoupling
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HYM536410
36-blt
36-bit
HY5117400
HY514100A
HYM53641OM/LM
HYM536410MG/LMG
1CE06-20-MAV94
HYM536410MG
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Z0301
Abstract: No abstract text available
Text: •HYUNDAI HYM53641 OB Series SEMICONDUCTOR 4M X 36-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM536410B is a 4M x 36-bit Fast page mode CMOS DRAM module consisting of nine HY5117400 in 24/28 pin SOJ on a 72 pin glass-epoxy printed circuit board. Q.22pF decoupling capacitor is mounted for each DRAM.
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HYM53641
36-bit
HYM536410B
HY5117400
HYM536410BM/BLM
HYM536410BMG/BLMG
C55-BEFORE-KÃ
1CE07-00-MAY93
Z0301
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bt dof
Abstract: No abstract text available
Text: •HYUNDAI HYM536410 Series SEMICONDUCTOR 4M X 36-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM536410 is a 4M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY5117400 in 24/28 pin SOJ and four HY514100A In 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0 .2 ^uF decoupling
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HYM536410
36-bit
HY5117400
HY514100A
HYM536410M/LM
HYM536410MG/LMG
4b750flÃ
1CE06-00-MAY93
bt dof
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HYM536410CM
Abstract: No abstract text available
Text: -HYUNDAI - • HYM536410C M-Series 4Mx36 bit FP DRAM MODULE based on 4Mx4 DRAM, with Parity, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM536410C M-Series is a 4Mx36-bit Fast Page mode CMOS DRAM m odule consisting o f eight H Y5117400C in 24/26 pin SOJ and four HY514100A in 20/26 pin SOJ on a 72 pin glass-epoxy printed
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HYM536410C
4Mx36
4Mx36-bit
Y5117400C
HY514100A
HYM536410CM
HYM536410CMG
72-Pin
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Untitled
Abstract: No abstract text available
Text: »HYUNDAI HYM536410A M-Series 4M x 36-bit CMOS DRAM MODULE DESCRIPTION The H YM 53641O A is a 4M x 36-bit Fast page m ode C M O S D R A M module consisting of eight H Y 5 1 17400A in 24/26 pin S O J or T S O P IIa n d four H Y514100A in 20/26 pin S O J or T S O P II on a 72 pin glass-epoxy printed circuit board.
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HYM536410A
36-bit
53641O
7400A
Y514100A
53641OAM/ALM/ATM/ALTM
HYM53641OAMG/ALMG/ATMG/ALTMG
HYM536410A/AL
HYM536410AT/ALT
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HYM536410AMG
Abstract: No abstract text available
Text: “H Y U N D A I H Y M 5 3 6 4 1 0 A M - S e r ie s 4Mx36-blt CMOS DRAM MODULE DESCRIPTION The HYM536410A is a 4M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY5117400A in 24/26 pin SOJ or TSOPII and four HY514100A in 20/26 pin SOJ or TSOPII on a 72 pin glass-epoxy
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4Mx36-blt
HYM536410A
36-bit
HY5117400A
HY514100A
HYM536410AM
HYM536410AMG
70WIJJ-í
p3G10
Pi/I53641
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Untitled
Abstract: No abstract text available
Text: ‘ HYUNDAI HYM536410A M-Series 4M X 36-bit CMOS DRAM MODULE DESCRIPTION The HYM53641OA is a 4M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY5117400A in 24/26 pin SOJ or TSOPII and four HY514100A in 20/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board.
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HYM536410A
36-bit
HYM53641OA
HY5117400A
HY514100A
HYM53641OAM/ALM/ATM/ALTM
HYM53641OAMG/ALMG/ATMG/ALTMG
13W72
HYM536410A/AL
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HYM536410
Abstract: HYM536410MG HYM53
Text: • H Y U N D A I SEMICONDUCTOR H Y M 5 3 6 4 1 0 S e r ie s 4M x 36-bit c m o s d r a m m o d u l e PRELIMINARY DESCRIPTION The HYM536410 is a 4M x 36-bit Fast page mode C M O S DRAM module consisting of eight H Y5117400 in 24/28 pin SO J and four HY514100A in 20/26 pin SO J on a 72 pin glass-epoxy printed circuit board. 0.2fyF decoupling
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36-bit
HYM536410
Y5117400
HY514100A
HYM53641OM/LM
HYM53641OMG/LMG
1CE06-00-M
1CE06-00-MAY93
HYM536410MG
HYM53
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5B33
Abstract: MJ002 HYM536410 HY5117400A HYM53641OAMG
Text: -HYUNDAI HYM536410A M-Series 4M x 36-bit CMOS DRAM MODULE DESCRIPTION The HYM53641OA is a 4M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY5117400A in 24/26 pin SOJ or TSOPII and four HY5141 OOAin 20/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board.
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HYM536410A
36-bit
HYM53641OA
HY5117400A
HY5141
HYM53641OAM/ALM/ATM/ALTM
HYM536410AMG/ALMG/ATMG/ALTMG
72WIH
020f5
5B33
MJ002
HYM536410
HYM53641OAMG
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HYM532814
Abstract: TRA8 L HYM536410 HYM532100AM HYM532100
Text: TIMING DIAGRAM INDEX E D O 4-Byte SIMM HYM532124AW HYM532224AW . . . . . . 1Mx32 EDO 2Mx32 EDO 2Mx32 EDO 1Mx 16 based . . . . . 1Mx 16 based . . . . . 2Mx8 based . . . . . EDO TIMING DIAGRAM -1 EDO TIMING DIAGRAM -1 . .
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HYM532124AW
HYM532224AW
HYM532224AE
HYM532214AE
HYM532414AM
HYM532414BM
1Mx32
2Mx32
HYM532814
TRA8 L
HYM536410
HYM532100AM
HYM532100
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Hyundai 2MX32 EDO simm module
Abstract: HYM532814 HYM53681 HYM5V72A3204
Text: «HYUNDAI QUICK REFERENCE MODE ORGANIZATION 8M Bytes 2Mx32 BASE PART NO. SPEED R£F. 1Mx16 HYM532224AW/AWG 60/70/80 1K 5V HYM532224CW/CWG 6G/7Q/80 1K 5V HYM532214AE/AEG 60/70/80 2K 5V EDO 2Mx8 FP 4Mx32 EDO VOLT. AVAIL. HYM532214CE/CEG 60/70/80 2K 5V HYM53241OAM/AMG
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1Mx16
2Mx32
HYM532224AW/AWG
HYM532224CW/CWG
HYM532214AE/AEG
HYM532214CE/CEG
6G/7Q/80
HYM53241OAM/AMG
HYM53241OCM/CMG
4Mx32
Hyundai 2MX32 EDO simm module
HYM532814
HYM53681
HYM5V72A3204
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HYM53641
Abstract: No abstract text available
Text: •HYUNDAI SEMICONDUCTOR HYM 536410 B S e rie s 4M X 36-bit CMOS ORAM MODULE PRELIMINARY DESCRIPTION The HYM53641 OB is a 4M x 36-blt Fast page mode CMOS DRAM module consisting of nine HY5117400 in 24/28 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22^F decoupling capacitor is mounted for each DRAM.
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36-bit
HYM53641
36-blt
HY5117400
HYM53641OBM/BLM
HYM53641OBMG/BLMG
1CE07-00-MAY93
HYM536410B
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HY5118160JC
Abstract: HY531000AJ HY-53 HYM591000B HYM536100AM HYM532120W
Text: As of ’96.3Q TYPE SIZE 30 Pin 1MB SIMM DESCRIPTION. PART NO. SPEEp- R EF. D EV ICE U S E D 1M <8 FPM ,L HYM581000BM 50/60/70 IK HY514400AJ x 2 1M <9 FPM ,L HYM591000BM 60/70 IK HY514400AJX2 4M <8 FPM ,L HYM584000AM 50/60/70 IK HY514100AJ x 8 FPM .SL HYM584000DM
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HYM581000BM
HYM591000BM
SPEEp50/60/70
HY514400AJ
HY514400AJX2
HY531000AJX1
HYM584000AM
HYM584000DM
HYM594000AM
HYM594000DM
HY5118160JC
HY531000AJ
HY-53
HYM591000B
HYM536100AM
HYM532120W
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