IFN112 Search Results

IFN112 Price and Stock

Filter by Manufacturer


InterFET Corporation IFN112 JFETs JFET N-Channel -50V Low Noise
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IFN112					1 - 10 - 100 - 1000 $6.76 10000 $6.76	Get Quote

IFN112 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IFN112		InterFET	N-Channel Silicon Junction Field-Effect Transistor		Original	PDF
IFN112		InterFET	N-Channel silicon junction field-effect transistor		Original	PDF

IFN112 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2SK112 Abstract: IFN112 Text: Databook.fxp 1/13/99 2:09 PM Page D-4 D-4 01/99 IFN112 N-Channel Silicon Junction Field-Effect Transistor ¥ Low-Noise, High Gain ¥ Equivalent to Japanese 2SK112 Absolute maximum ratings at TA = 25¡C Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current	Original	PDF	IFN112 2SK112 NJ132H 2SK112 IFN112
2SK146 Abstract: 2SK147 equivalent 2sk146 equivalent transistor sdg 2SK105 2sk146 datasheet 2SK105 Datasheet 2SK147 2sk152 equivalent Japanese Transistor Text: Databook.fxp 1/14/99 2:03 PM Page D-2 D-2 01/99 Japanese Equivalent JFET Types Silicon Junction Field-Effect Transistors Japanese InterFET Process 2SK17 2SK40 2SK59 2SK105 2SK113 IFN17 IFN40 IFN59 IFN105 IFN113 NJ16 NJ16 NJ16 NJ16 NJ132 Parameters Conditions	Original	PDF	2SK17 2SK40 2SK59 2SK105 2SK113 IFN17 IFN40 IFN59 IFN105 IFN113 2SK146 2SK147 equivalent 2sk146 equivalent transistor sdg 2SK105 2sk146 datasheet 2SK105 Datasheet 2SK147 2sk152 equivalent Japanese Transistor
2sk112 Abstract: No abstract text available Text: 9-97 E4 IFN112 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR • LOW NOISE, HIGH GAIN • Equivalent to Japanese 2SK112 Absolute maximum ratings at TA= 25°C Reverse Gate Source & Reverse Gate Drain Voltage - 50 V Continuous Forward Gate Current 10 mA	OCR Scan	PDF	IFN112 2SK112 NJ132H 2sk112
pa 0016 equivalent Abstract: 2sk112 Text: E4 8-94 IFN112 N - C H A N N E L S IL IC O N J U N C T IO N FIELD-EFFECT T R A N S IS T O R LOW NOISE, HIGH GAIN Equivalent to Japanese 2SK112 Absolute maximum ratings at TA = 25°C Reverse Gate Source & Reverse Gate Drain Vottage - 50 V Continuous Forward Gate Current	OCR Scan	PDF	IFN112 2SK112 IFN112 NJ132H T0-18 pa 0016 equivalent 2sk112
2SK112 Abstract: pa 0016 equivalent equivalent transistor c 495 ifn112 NJ132H Text: E4 9 -9 7 IF N 1 1 2 N -C H A N N E L SILICO N JU N CTIO N FIELD-EFFECT TRANSISTOR LOW NOISE, HIGH GAIN Equivalent to Japanese 2SK112 Absolute maximum ratings at TA = 25°C Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation	OCR Scan	PDF	IFN112 2SK112 IFN112 NJ132H 100nA pa 0016 equivalent equivalent transistor c 495 NJ132H