2SK112 Search Results

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Part	ECAD Model	Manufacturer	Description	Download	Buy
2SK1123-A		Renesas Electronics Corporation	Silicon N Channel MOSFET

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Toshiba America Electronic Components 2SK1124
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	2SK1124		297			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Toshiba America Electronic Components 2SK1120 Electronic Component
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ComSIT USA	2SK1120		150			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Chip 1 Exchange	2SK1120		87			1 - 10 - 100 - 1000 - 10000 -	Get Quote

2SK112 Datasheets (32)

Part	Manufacturer	Description	Datasheet Type	PDF
2SK112	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
2SK112	Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF
2SK112	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
2SK112	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
2SK112	Unknown	FET Data Book	Scan	PDF
2SK112	Toshiba	(2SK11x) N-CHANNEL JFET TRANSISTOR	Scan	PDF
2SK1120	Toshiba	TRANS MOSFET N-CH 1000V 8A 3(2-16C1B)	Original	PDF
2SK1120	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
2SK1120	Toshiba	N-Channel MOSFET	Original	PDF
2SK1120	Toshiba		Original	PDF
2SK1120	Toshiba	Power MOSFET Selection Guide with Cross Reference Data	Original	PDF
2SK1120	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
2SK1120	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
2SK1120	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF

2SK1120	Unknown	Silicon N channel field effect transistor for high speed, high current switching applications, DC-DC converter and motor drive applications	Scan	PDF
2SK1120	Toshiba	Silicon N channel field effect transistor for high speed, high current switching applications, DC-DC converter and motor drive applications	Scan	PDF
2SK1120	Toshiba	FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE(pi-MOSII.5)	Scan	PDF
2SK1120(F)	Toshiba	2SK1120 - TRANSISTOR 8 A, 1000 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, 2-16C1B, 3 PIN, FET General Purpose Power	Original	PDF
2SK1120(F,T)	Toshiba	2SK1120 - Trans MOSFET N-CH 1KV 8A 3-Pin TO-3P(W) T/R	Original	PDF
2SK1122	NEC	Semiconductor Selection Guide 1995	Original	PDF

2SK112 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
TRANSISTOR k1120 Abstract: k1120 Text: 2SK1120 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1120 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 1.5 Ω (typ.) z High forward transfer admittance : \|Yfs\| = 4.0 S (typ.)	Original	PDF	2SK1120 2-16C1B TRANSISTOR k1120 k1120
2SK1123 Abstract: MP-88 Text: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistors 2SK1123 N チャネルパワーMOS FET スイッチング用 2SK1123 は，N チャネル縦形パワーMOS FET で，5 V 電源系 IC の出力による直接駆動が可能な高速スイッチング	Original	PDF	2SK1123 2SK1123 D18440JJ2V0DS00 TC-7540 D18440JJ2V0DS MP-88
std2n52 Abstract: stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent Text: POWER MOSFETS CROSS REFERENCE Industry standard 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1164 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205 2SK1231 2SK1232	Original	PDF	2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 std2n52 stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent
k1120 Abstract: TRANSISTOR k1120 2SK1120 power device k1120 transistor 2SK1120 power transistor k1120 2SK1120 DATA Text: 2SK1120 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1120 DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 1.5 Ω (typ.) High forward transfer admittance : \|Yfs\|= 4.0 S (typ.) Low leakage current	Original	PDF	2SK1120 k1120 TRANSISTOR k1120 2SK1120 power device k1120 transistor 2SK1120 power transistor k1120 2SK1120 DATA
2sk129 Abstract: 2sk150 datasheet 2SK101 2SK107 data sheet 2SK105 Datasheet 2sk122 2SK109 2sk146 datasheet 2SK182E 2SK131 Text: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG ID Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) Pd/Pch Tj/Tch min (V) 2SK101 2SK102 2SK103 2SK104 2SK105 2SK106 2SK107 2SK108 2SK109 2SK109A 2SK110 2SK111 2SK112 2SK113 2SK117 2SK118 2SK119	Original	PDF	2SK101 2SK102 2SK103 2SK104 2SK105 2SK106 2SK107 2SK108 2SK109 2SK109A 2sk129 2sk150 datasheet 2SK101 2SK107 data sheet 2SK105 Datasheet 2sk122 2SK109 2sk146 datasheet 2SK182E 2SK131
2SK1123 Abstract: MP-88 Nec AC 160 Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1123 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK1123 is N-Channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Low on-state resistance RDS on 1 = 27 mΩ MAX. (VGS = 10 V, ID = 20 A)	Original	PDF	2SK1123 2SK1123 MP-88 Nec AC 160
TRANSISTOR k1120 Abstract: 2sk1120 Text: 2SK1120 .5 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII 2SK1120 DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 1.5 Ω (typ.) High forward transfer admittance : \|Yfs\|= 4.0 S (typ.) Low leakage current	Original	PDF	2SK1120 TRANSISTOR k1120 2sk1120
D1843 Abstract: 2SK1122 k1995 TC-7539 MP-88 Text: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistors 2SK1122 N チャネルパワーMOS FET スイッチング用 2SK1122 は，N チャネル縦形パワーMOS FET で，5 V 電源系 IC の出力による直接駆動が可能な高速スイッチング	Original	PDF	2SK1122 2SK1122 D18439JJ2V0DS00 TC-7539 D18439JJ2V0DS D1843 k1995 TC-7539 MP-88
transistor 2SK1120 Abstract: CL226 2SK1120 Text: TOSHIBA 2SK1120 Field Effect Transistor Industrial Applications Unit in m m Silicon N Channel MOS Type rc-MOS II High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • 4-Volt Gate Drive • Low Drain-Source ON Resistance	OCR Scan	PDF	2SK1120 --300nA transistor 2SK1120 CL226 2SK1120
TH12E Abstract: 2SK1123 MEI-1202 TEA-1035 esio Nec AC 160 Text: DATA SHEET NEC 1N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK1123 À SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION 2SK1123 is N-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Low On-state Resistance	OCR Scan	PDF	2SK1123 2SK1123 IEI-1209) TH12E MEI-1202 TEA-1035 esio Nec AC 160
2SK1122 Abstract: TEA-1035 MEI-1202 tf155 Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET ÆÊ^BBS. NEC MOS FIELD EFFECT POWER TRANSISTOR 2SK1122 SWITCHING N-CHANIMEL POWER MOS FET	OCR Scan	PDF	2SK1122 2SK1122 IEI-1209) TEA-1035 MEI-1202 tf155
Untitled Abstract: No abstract text available Text: NEC S t •is — h MOS M O S F ield E ffe c t P o w e r T ra n s is to r 2SK1122 7 N + * J W < r7 — 4 x N f t i'i« / N " 7 - M 0 S i : U ^ > ÎEÎA^'fS < , X j 'i / 7 i fc, l 5 V SïÜÎ3UC<7 M ÎÎ ’ mm) f-'j -r f > ^"#'14 b iStiX^^ôfzàb, 7 K,	OCR Scan	PDF	2SK1122
transistor 2SK1120 Abstract: No abstract text available Text: TOSHIBA 2SK1120 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSII -5 IN D U S T R IA L A P P L IC A T IO N S U n it in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS Low Drain-Source O N Resistance	OCR Scan	PDF	2SK1120 transistor 2SK1120
2sk1124 Abstract: YS 150 003 Text: 2SK1124 FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE ff-MOSm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS CH O PPER REGULATOR, DC-DC C O NVERTER AND M OTOR Unit in m m D R I V E APPLICATIONS. • L o w Dra i n - S o u r c e O N R e s i s t a n c e : Rjjg(0N)= -022SÎ( T y p .)	OCR Scan	PDF	2SK1124 -022SÎ 300yA 2sk1124 YS 150 003

2SK1123 Abstract: MEI-1202 TEA-1035 Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET NEC 1N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK1123 À SWITCHING N-CHANNEL POWER MOS FET	OCR Scan	PDF	2SK1123 2SK1123 IEI-1209) MEI-1202 TEA-1035
2SK1120 DATA Abstract: 2SK1120 Text: TOSHIBA FIELD EFFECT TRANSISTOR SEM ICONDUCTOR TO SH IBA TECHNICAL 2 S K 1 120 DATA SILICON N CHANNEL MOS TYPE 7T- M O S II • 5 (2SK1120) INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS.	OCR Scan	PDF	2SK1120 2SK1120) 2SK112Û 2SK1120 DATA 2SK1120
Untitled Abstract: No abstract text available Text: t • S Ss— NEC h MOS M O S Field Effect P o w e r Transistor 2SK1123 1 — MOS FET N T .m m 2SK1123 ü , N tj iz i ^ MOS F E T T", 5 V i T ^ IC <Dtfi W M m w w n n t t m ì È . K j ~y^-> y ^ T t o y fy m Z fr'fS<, K, A mm; X ^ 3 .2 ± 0.2 < y ^> 7 W ÌÌ> ià tlT ^ 'Ò f2 tÒ ,	OCR Scan	PDF	2SK1123
2SK1120 Abstract: No abstract text available Text: TOSHIBA 2SK1120 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSII-5 2 S K 1 120 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • Low Drain-Source ON Resistance • High Forward Transfer Admittance : \|Yfs\| = 4.0S (Typ.)	OCR Scan	PDF	2SK1120 -l-50 2SK1120
Nec AC 160 Abstract: NEC 12E 2SK1123 MEI-1202 TEA-1035 ScansUX882 Text: DATA SHEET NEC iN-CHANNEL W MOS i FIELD i EFFECT POWER TRANSISTOR r 2SK1123 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1123 is N-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Low On-state Resistance	OCR Scan	PDF	2SK1123 IEI-1209) Nec AC 160 NEC 12E MEI-1202 TEA-1035 ScansUX882
2SK112 Abstract: pa 0016 equivalent equivalent transistor c 495 ifn112 NJ132H Text: E4 9 -9 7 IF N 1 1 2 N -C H A N N E L SILICO N JU N CTIO N FIELD-EFFECT TRANSISTOR LOW NOISE, HIGH GAIN Equivalent to Japanese 2SK112 Absolute maximum ratings at TA = 25°C Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation	OCR Scan	PDF	IFN112 2SK112 IFN112 NJ132H 100nA pa 0016 equivalent equivalent transistor c 495 NJ132H
2sk112 Abstract: No abstract text available Text: 9-97 E4 IFN112 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR • LOW NOISE, HIGH GAIN • Equivalent to Japanese 2SK112 Absolute maximum ratings at TA= 25°C Reverse Gate Source & Reverse Gate Drain Voltage - 50 V Continuous Forward Gate Current 10 mA	OCR Scan	PDF	IFN112 2SK112 NJ132H 2sk112
TEA-1035 Abstract: No abstract text available Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET NEC iN-CHANNEL W MOS i FIELD i EFFECT POWER TRANSISTOR r 2SK1123 SWITCHING N-CHANNEL POWER MOS FET	OCR Scan	PDF	2SK1123 2SK1123 TEA-1035
Untitled Abstract: No abstract text available Text: 2SK1120 TOSHIBA TO SHIBA FIELD EFFECT TRANSISTOR SILICON N CHANN EL MOS TYPE tt- M O S I I -5 2 S K 1 120 INDUSTRIAL APPLICATIONS U nit in mm HIGH SPEED, HIGH CURRENT SW ITCHING APPLICATIONS DC-DC CONVERTER A N D M O TO R DRIVE APPLICATIONS : Rd S(ON) 1 5 .9 M A X -	OCR Scan	PDF	2SK1120 max300
pa 0016 equivalent Abstract: 2sk112 Text: E4 8-94 IFN112 N - C H A N N E L S IL IC O N J U N C T IO N FIELD-EFFECT T R A N S IS T O R LOW NOISE, HIGH GAIN Equivalent to Japanese 2SK112 Absolute maximum ratings at TA = 25°C Reverse Gate Source & Reverse Gate Drain Vottage - 50 V Continuous Forward Gate Current	OCR Scan	PDF	IFN112 2SK112 IFN112 NJ132H T0-18 pa 0016 equivalent 2sk112

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2SK112 Search Results

2SK112 Result Highlights (1)

2SK112 Price and Stock

Toshiba America Electronic Components 2SK1124

Toshiba America Electronic Components 2SK1120

2SK112 Datasheets (32)

2SK112 Datasheets Context Search

TRANSISTOR k1120

2SK1123

std2n52

k1120

2sk129

2SK1123

TRANSISTOR k1120

D1843

transistor 2SK1120

TH12E

2SK1122

Untitled

transistor 2SK1120

2sk1124

2SK1123

2SK1120 DATA

Untitled

2SK1120

Nec AC 160

2SK112

2sk112

TEA-1035

Untitled

pa 0016 equivalent