Untitled
Abstract: No abstract text available
Text: IXFH24N50S Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V)20 I(D) Max. (A)24# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)96 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)300# Minimum Operating Temp (øC)-55õ
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IXFH24N50S
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24n50
Abstract: IXFH26N50 IXFH24N50 IXFH21N50 .24n50 21N50 26N50 IXFM21N50 IXYS IXFH26N50
Text: HiPerFETTM Power MOSFETs VDSS IXFH/IXFM21N50 IXFH/IXFM/IXFT24N50 IXFH/IXFT26N50 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V V GS
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IXFH/IXFM21N50
IXFH/IXFM/IXFT24N50
IXFH/IXFT26N50
24n50
IXFH26N50
IXFH24N50
IXFH21N50
.24n50
21N50
26N50
IXFM21N50
IXYS IXFH26N50
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IXFH21N50
Abstract: IXFH24N50 0225 21N50 24N50 26N50 IXFM21N50
Text: HiPerFETTM Power MOSFETs VDSS IXFH/IXFM21N50 IXFH/IXFM/IXFT24N50 IXFH/IXFT26N50 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS
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IXFH/IXFM21N50
IXFH/IXFM/IXFT24N50
IXFH/IXFT26N50
O-247
IXFH21N50
IXFH24N50
0225
21N50
24N50
26N50
IXFM21N50
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MOSFET 6N100
Abstract: 26n50 N06 MOSFET 6n90 transistor ixfh application note mosfet 24n50 transistor equivalent mosfet 24n50 IXFH26N50 76N06 24N50
Text: IXFH 76N06 Preliminary Data IXFH 76N06 IXFH 76N07-11 IXFH 76N07-12 HiPerFETTM Power MOSFETs IXFH 76N07-11 IXFH 76N07-12 VDSS ID25 RDS on trr 60 V 70 V 70 V 76 A 76 A 76 A 11 mΩ 11 mΩ 12 mΩ 150 ns 150 ns 150 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
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76N06
76N07-11
76N07-12
O-247
6N100
6N100
D-68623
MOSFET 6N100
26n50
N06 MOSFET
6n90
transistor ixfh application note
mosfet 24n50 transistor equivalent
mosfet 24n50
IXFH26N50
76N06
24N50
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IXFH26N50
Abstract: IXFH21N50
Text: HiPerFETTM Power MOSFETs VDSS IXFH/IXFM21N50 IXFH/IXFM/IXFT24N50 IXFH/IXFT26N50 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS
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IXFH/IXFM21N50
IXFH/IXFM/IXFT24N50
IXFH/IXFT26N50
IXFH26N50
IXFH21N50
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Untitled
Abstract: No abstract text available
Text: HiPerFET Power MOSFET IXFH24N50S VDSS ^D25 = 500 V = 24 A RDS on = 0.23 Cl < 250 ns tr r Surface Mountable N-Channel Enhancement-Mode Avalanche Rated, High dv/dt, Low trr Preliminary data Symbol Test Conditions Maximum Ratings VDSS Td = 25°C to 175°C
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OCR Scan
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IXFH24N50S
O-247
HDMO190
1250C
24N50S
24N50
D94010DE,
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24N50S
Abstract: smd JH IXFH24N50S D2528
Text: HiPerFET Power MOSFET IXFH24N50S VDSS D25 RDS on Surface Mountable N-Channel Enhancement-Mode Avalanche Rated, High dv/dt, Low trr t rr =s500 V = 24 A = 0.23 Cl < 250 ns Preliminary data Symbol Maximum Ratings . te s t Conditions v DSS Tj = 25 Cto l7 5 bC
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OCR Scan
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IXFH24N50S
175bC
O-247
24N50S
24N50
D94010DE,
Mbflb22b
smd JH
D2528
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IXFH21N50
Abstract: No abstract text available
Text: HiPerFET Power MOSFETs IXFH/IXFM21N50 IXFH/IXFM/IXFT24N50 IXFH/IXFT26N50 N-Channel Enhancement Mode High dv/dt, L o w trr, HDM O S™ Family Maximum Ratings Test Conditions V DSS T d = 25°C to 150°C 500 V v DGR T d = 25°C to 150°C; RGS = 1 M£i 500
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OCR Scan
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IXFH/IXFM21N50
IXFH/IXFM/IXFT24N50
IXFH/IXFT26N50
O-247
IXFT24N50
IXFH26N50
IXFM26N50
IXFT26N50
IXFH21N50
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gs 1117 ax
Abstract: 1XFH Diode SMD SJ 97 Diode SMD SJ 24 Diode SMD SJ 0B
Text: v DSS HiPerFET Power MOSFETs DS on 500 V 21 A 0.25 a 500 V 24 A 0.23 Q 500 V 26 A 0.20 il IXFH/IXFM21 N50 IXFH/IXFM 24 N50 IXFH26N50 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family p ^D25 t„ < 250 ns ?D G As Maximum Ratings Symbol Test Conditions
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OCR Scan
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IXFH/IXFM21
IXFH26N50
21N50
24N50
26N50
gs 1117 ax
1XFH
Diode SMD SJ 97
Diode SMD SJ 24
Diode SMD SJ 0B
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30n50 mosfet
Abstract: DSE119-06AS VM0400-02F MCC SMD DIODE 300-06DA smd43 35-06AS 500-06DA 250-12DA mosfet p channel
Text: Contents Insulated Gate Bipolar Transistors IGBT Package style vCES Tc = 2S°C 2. TO-247 SMD 1a. TO-263AA 2a. TO-247 SMD Page A V 1 600 20 48 3.0 2.7 3 600 60 2.5 2 600 75 2.7 1 600 20 20 2.5 3.0 600 48 60 60 2.7 2.9 2.5 600 16 25 16 2.5 600 48 2.7 7 600
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OCR Scan
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O-263
O-263AA
O-247
IXGA10N60A
IXGA24N60A
IXGH32N60B
IXGH50N60AS
IXGA10N60U1
30n50 mosfet
DSE119-06AS
VM0400-02F
MCC SMD DIODE
300-06DA
smd43
35-06AS
500-06DA
250-12DA
mosfet p channel
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