IXFH24N50S Search Results

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Untitled Abstract: No abstract text available Text: IXFH24N50S Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V)20 I(D) Max. (A)24# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)96 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)300# Minimum Operating Temp (øC)-55õ	Original	IXFH24N50S	PDF
24n50 Abstract: IXFH26N50 IXFH24N50 IXFH21N50 .24n50 21N50 26N50 IXFM21N50 IXYS IXFH26N50 Text: HiPerFETTM Power MOSFETs VDSS IXFH/IXFM21N50 IXFH/IXFM/IXFT24N50 IXFH/IXFT26N50 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V V GS	Original	IXFH/IXFM21N50 IXFH/IXFM/IXFT24N50 IXFH/IXFT26N50 24n50 IXFH26N50 IXFH24N50 IXFH21N50 .24n50 21N50 26N50 IXFM21N50 IXYS IXFH26N50	PDF
IXFH21N50 Abstract: IXFH24N50 0225 21N50 24N50 26N50 IXFM21N50 Text: HiPerFETTM Power MOSFETs VDSS IXFH/IXFM21N50 IXFH/IXFM/IXFT24N50 IXFH/IXFT26N50 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS	Original	IXFH/IXFM21N50 IXFH/IXFM/IXFT24N50 IXFH/IXFT26N50 O-247 IXFH21N50 IXFH24N50 0225 21N50 24N50 26N50 IXFM21N50	PDF
MOSFET 6N100 Abstract: 26n50 N06 MOSFET 6n90 transistor ixfh application note mosfet 24n50 transistor equivalent mosfet 24n50 IXFH26N50 76N06 24N50 Text: IXFH 76N06 Preliminary Data IXFH 76N06 IXFH 76N07-11 IXFH 76N07-12 HiPerFETTM Power MOSFETs IXFH 76N07-11 IXFH 76N07-12 VDSS ID25 RDS on trr 60 V 70 V 70 V 76 A 76 A 76 A 11 mΩ 11 mΩ 12 mΩ 150 ns 150 ns 150 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family	Original	76N06 76N07-11 76N07-12 O-247 6N100 6N100 D-68623 MOSFET 6N100 26n50 N06 MOSFET 6n90 transistor ixfh application note mosfet 24n50 transistor equivalent mosfet 24n50 IXFH26N50 76N06 24N50	PDF
IXFH26N50 Abstract: IXFH21N50 Text: HiPerFETTM Power MOSFETs VDSS IXFH/IXFM21N50 IXFH/IXFM/IXFT24N50 IXFH/IXFT26N50 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS	Original	IXFH/IXFM21N50 IXFH/IXFM/IXFT24N50 IXFH/IXFT26N50 IXFH26N50 IXFH21N50	PDF
Untitled Abstract: No abstract text available Text: HiPerFET Power MOSFET IXFH24N50S VDSS ^D25 = 500 V = 24 A RDS on = 0.23 Cl < 250 ns tr r Surface Mountable N-Channel Enhancement-Mode Avalanche Rated, High dv/dt, Low trr Preliminary data Symbol Test Conditions Maximum Ratings VDSS Td = 25°C to 175°C	OCR Scan	IXFH24N50S O-247 HDMO190 1250C 24N50S 24N50 D94010DE,	PDF
24N50S Abstract: smd JH IXFH24N50S D2528 Text: HiPerFET Power MOSFET IXFH24N50S VDSS D25 RDS on Surface Mountable N-Channel Enhancement-Mode Avalanche Rated, High dv/dt, Low trr t rr =s500 V = 24 A = 0.23 Cl < 250 ns Preliminary data Symbol Maximum Ratings . te s t Conditions v DSS Tj = 25 Cto l7 5 bC	OCR Scan	IXFH24N50S 175bC O-247 24N50S 24N50 D94010DE, Mbflb22b smd JH D2528	PDF
IXFH21N50 Abstract: No abstract text available Text: HiPerFET Power MOSFETs IXFH/IXFM21N50 IXFH/IXFM/IXFT24N50 IXFH/IXFT26N50 N-Channel Enhancement Mode High dv/dt, L o w trr, HDM O S™ Family Maximum Ratings Test Conditions V DSS T d = 25°C to 150°C 500 V v DGR T d = 25°C to 150°C; RGS = 1 M£i 500	OCR Scan	IXFH/IXFM21N50 IXFH/IXFM/IXFT24N50 IXFH/IXFT26N50 O-247 IXFT24N50 IXFH26N50 IXFM26N50 IXFT26N50 IXFH21N50	PDF
gs 1117 ax Abstract: 1XFH Diode SMD SJ 97 Diode SMD SJ 24 Diode SMD SJ 0B Text: v DSS HiPerFET Power MOSFETs DS on 500 V 21 A 0.25 a 500 V 24 A 0.23 Q 500 V 26 A 0.20 il IXFH/IXFM21 N50 IXFH/IXFM 24 N50 IXFH26N50 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family p ^D25 t„ < 250 ns ?D G As Maximum Ratings Symbol Test Conditions	OCR Scan	IXFH/IXFM21 IXFH26N50 21N50 24N50 26N50 gs 1117 ax 1XFH Diode SMD SJ 97 Diode SMD SJ 24 Diode SMD SJ 0B	PDF
30n50 mosfet Abstract: DSE119-06AS VM0400-02F MCC SMD DIODE 300-06DA smd43 35-06AS 500-06DA 250-12DA mosfet p channel Text: Contents Insulated Gate Bipolar Transistors IGBT Package style vCES Tc = 2S°C 2. TO-247 SMD 1a. TO-263AA 2a. TO-247 SMD Page A V 1 600 20 48 3.0 2.7 3 600 60 2.5 2 600 75 2.7 1 600 20 20 2.5 3.0 600 48 60 60 2.7 2.9 2.5 600 16 25 16 2.5 600 48 2.7 7 600	OCR Scan	O-263 O-263AA O-247 IXGA10N60A IXGA24N60A IXGH32N60B IXGH50N60AS IXGA10N60U1 30n50 mosfet DSE119-06AS VM0400-02F MCC SMD DIODE 300-06DA smd43 35-06AS 500-06DA 250-12DA mosfet p channel	PDF