M28F151
Abstract: No abstract text available
Text: M28F151T M28F151B 1.5 Megabit 192K x 8, Chip Erase FLASH MEMORY DATA BRIEFING VALID MEMORY ADDRESS SPACES: – 00000h to 2FFFFh for M28F151B – 10000h to 3FFFFh for M28F151T FAST ACCESS TIME: 70ns LOW POWER CONSUMPTION – Active Current: 15mA Typ. – Standby Current: 10µA Typ.
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Original
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M28F151T
M28F151B
00000h
10000h
M28F151
120ns
150ns
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PDF
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M28F151
Abstract: No abstract text available
Text: M28F151T M28F151B 1.5 Megabit 192K x 8, Chip Erase FLASH MEMORY PRODUCT PREVIEW VALID MEMORY ADDRESS SPACES: – 00000h to 2FFFFh for M28F151B – 10000h to 3FFFFh for M28F151T FAST ACCESS TIME: 70ns LOW POWER CONSUMPTION – Active Current: 15mA Typ. – Standby Current: 10µA Typ.
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M28F151T
M28F151B
00000h
10000h
M28F151
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PDF
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TSOP40 Flash
Abstract: m48z32y M27V512 FDIP24W M27128A M2716 M27256 M2732A M27512 M2764A
Text: MEMORY PRODUCTS SELECTOR GUIDE A C) NMOS UV EPROM, 5V Operation Size 16 Kb 32 Kb 64 Kb 128 Kb 256 Kb 512 Kb Ref M2716 M2732A M2764A M27128A M27256 M27512 Description 16 Kb x8), 350 - 450ns, NMOS 32 Kb (x8), 200 - 450ns, NMOS 64 Kb (x8), 180 - 450ns, NMOS
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M2716
M2732A
M2764A
M27128A
M27256
M27512
450ns,
TSOP40 Flash
m48z32y
M27V512
FDIP24W
M27128A
M2716
M27256
M2732A
M27512
M2764A
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PDF
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asm eagle
Abstract: M28F101 M28F102 M28F201 M28F256 M28F512 texas 4mb dram M27C1024 Parallel NOR Flash Market MBX860
Text: MEMORY SELECTOR Leading Edge Memories Index page Leading Edge Memories 1 Why a Broad Range? 2 Technology, Upgrades and Quality 6 Flash Memories: application flexibility 8 EEPROM and ASM: higher performance 10 OTP and UV EPROM: dependable solutions 14 Non-Volatile RAM:
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BRMEMSEL/0997
asm eagle
M28F101
M28F102
M28F201
M28F256
M28F512
texas 4mb dram
M27C1024
Parallel NOR Flash Market
MBX860
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PDF
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PJ 1179
Abstract: M27512 12b1 M27F512 ST24C08B1 M27C256B-12F1 ST93C46AB1 m27c4001-12f1 m48z32y M27C1001-20F1 ST24C04CM6TR
Text: MEMORY SELECTOR Leading Edge Memories GO Leading Edge Memories Leading Edge Memories Flash Memories Serial and Parallel EEPROMs Application Specific Memories UV and OTP EPROMs Non-Volatile RAMs Broad Range SGS-THOMSON is a world leader in non-volatile memories, manufacturing a
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON M28F151B 1.5 Mb 192K x 8, Chip Erase FLASH MEMORY PR ELIM IN A R Y DATA 5 V ± 10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMMING TIME: 10^s typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION - Active Current: 15mAtyp.
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OCR Scan
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M28F151B
15mAtyp.
10jiA
PDIP32
PLCC32
M28F151
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PDF
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