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Catalog Datasheet	MFG & Type	Document Tags	PDF
M28F151 Abstract: No abstract text available Text: M28F151T M28F151B 1.5 Megabit 192K x 8, Chip Erase FLASH MEMORY DATA BRIEFING VALID MEMORY ADDRESS SPACES: – 00000h to 2FFFFh for M28F151B – 10000h to 3FFFFh for M28F151T FAST ACCESS TIME: 70ns LOW POWER CONSUMPTION – Active Current: 15mA Typ. – Standby Current: 10µA Typ.	Original	M28F151T M28F151B 00000h 10000h M28F151 120ns 150ns	PDF
M28F151 Abstract: No abstract text available Text: M28F151T M28F151B 1.5 Megabit 192K x 8, Chip Erase FLASH MEMORY PRODUCT PREVIEW VALID MEMORY ADDRESS SPACES: – 00000h to 2FFFFh for M28F151B – 10000h to 3FFFFh for M28F151T FAST ACCESS TIME: 70ns LOW POWER CONSUMPTION – Active Current: 15mA Typ. – Standby Current: 10µA Typ.	Original	M28F151T M28F151B 00000h 10000h M28F151	PDF
TSOP40 Flash Abstract: m48z32y M27V512 FDIP24W M27128A M2716 M27256 M2732A M27512 M2764A Text: MEMORY PRODUCTS SELECTOR GUIDE A C) NMOS UV EPROM, 5V Operation Size 16 Kb 32 Kb 64 Kb 128 Kb 256 Kb 512 Kb Ref M2716 M2732A M2764A M27128A M27256 M27512 Description 16 Kb x8), 350 - 450ns, NMOS 32 Kb (x8), 200 - 450ns, NMOS 64 Kb (x8), 180 - 450ns, NMOS	Original	M2716 M2732A M2764A M27128A M27256 M27512 450ns, TSOP40 Flash m48z32y M27V512 FDIP24W M27128A M2716 M27256 M2732A M27512 M2764A	PDF
asm eagle Abstract: M28F101 M28F102 M28F201 M28F256 M28F512 texas 4mb dram M27C1024 Parallel NOR Flash Market MBX860 Text: MEMORY SELECTOR Leading Edge Memories Index page Leading Edge Memories 1 Why a Broad Range? 2 Technology, Upgrades and Quality 6 Flash Memories: application flexibility 8 EEPROM and ASM: higher performance 10 OTP and UV EPROM: dependable solutions 14 Non-Volatile RAM:	Original	BRMEMSEL/0997 asm eagle M28F101 M28F102 M28F201 M28F256 M28F512 texas 4mb dram M27C1024 Parallel NOR Flash Market MBX860	PDF
PJ 1179 Abstract: M27512 12b1 M27F512 ST24C08B1 M27C256B-12F1 ST93C46AB1 m27c4001-12f1 m48z32y M27C1001-20F1 ST24C04CM6TR Text: MEMORY SELECTOR Leading Edge Memories GO Leading Edge Memories Leading Edge Memories Flash Memories Serial and Parallel EEPROMs Application Specific Memories UV and OTP EPROMs Non-Volatile RAMs Broad Range SGS-THOMSON is a world leader in non-volatile memories, manufacturing a	Original		PDF
Untitled Abstract: No abstract text available Text: SGS-THOMSON M28F151B 1.5 Mb 192K x 8, Chip Erase FLASH MEMORY PR ELIM IN A R Y DATA 5 V ± 10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMMING TIME: 10^s typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION - Active Current: 15mAtyp.	OCR Scan	M28F151B 15mAtyp. 10jiA PDIP32 PLCC32 M28F151	PDF
Untitled Abstract: No abstract text available Text: S G S -1 H 0 M S 0 N M28F151 [^ a g ^ ( Q g L [i W ( Q ) R { ]D © S 1.5 Megabit (192K x 8, Chip Erase) FLASH MEMORY PRODUCT PREVIEW • VALID MEMORY ADDRESS SPACE: OOOOOh to 2FFFFh ■ FAST ACCESS TIME: 90ns ■ LOW POWER CONSUMPTION - Active Current: 15mATyp.	OCR Scan	M28F151 15mATyp. M28F151 ar555 007T0S2 TSOP32 TSOP32	PDF