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Toshiba America Electronic Components MG50Q2YS50ACG Electronic Component
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MG50Q Datasheets (40)

Part	Manufacturer	Description	Datasheet Type	PDF
MG50Q1BS1	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
MG50Q1BS11	Toshiba	N channel IGBT	Original	PDF
MG50Q1BS11	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
MG50Q1BS11	Toshiba	N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)	Scan	PDF
MG50Q1ZS50	Toshiba	TRANS IGBT MODULE N-CH 1200V 78A 5(2-94D7A)	Original	PDF
MG50Q1ZS50	Toshiba	GTR Module Silicon N Channel IGBT	Original	PDF
MG50Q2YK1	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
MG50Q2YK1	Unknown		Scan	PDF
MG50Q2YK1	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
MG50Q2YK1	Unknown	Power and Industrial Semiconductors Data Book	Scan	PDF
MG50Q2YK9	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
MG50Q2YL1	Westcode Semiconductors	NPN transistor for high power switching and notor control applications, 1200V, 50A	Scan	PDF
MG50Q2YS40	Toshiba	TRANS IGBT MODULE N-CH 1200V 50A 7(2-94D1A)	Original	PDF
MG50Q2YS40	Toshiba	GTR Module Silicon N Channel IGBT	Scan	PDF

MG50Q2YS40	Toshiba	Silicon N-channel IGBT GTR module for high power switching, motor control applications	Scan	PDF
MG50Q2YS40	Toshiba	GTR Module Silicon N-Channel IGBT	Scan	PDF
MG50Q2YS50	Toshiba	TRANS IGBT MODULE N-CH 1200V 78A 7(2-94D4A)	Original	PDF
MG50Q2YS50	Toshiba	Silicon N-channel IGBT GTR module for high power switching, motor control applications	Original	PDF
MG50Q2YS50	Toshiba	GTR Module Silicon N Channel IGBT	Scan	PDF
MG50Q2YS50	Toshiba	GTR Module - Silicon N-Channel IGBT	Scan	PDF

MG50Q Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: MG50Q1ZS50 TOSHIBA GTR Module Silicon N Channel IGBT MG50Q1ZS50 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.3 µs max @Inductive load Low saturation voltage : VCE (sat) = 3.6 V (max) Enhancement-mode	Original	MG50Q1ZS50 2-94D7A	PDF
MG50Q1ZS50 Abstract: No abstract text available Text: MG50Q1ZS50 TOSHIBA GTR Module Silicon N Channel IGBT MG50Q1ZS50 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.3 µs Max @Inductive load Low saturation voltage : VCE (sat) = 3.6 V (Max) Enhancement-mode	Original	MG50Q1ZS50 MG50Q1ZS50	PDF
MG50Q2YS50 Abstract: toshiba mg50q2ys50 Text: MG50Q2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG50Q2YS50 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.3µs Max @Inductive load Low saturation voltage : VCE (sat) = 3.6V (Max) Enhancement-mode	Original	MG50Q2YS50 2-94D4A MG50Q2YS50 toshiba mg50q2ys50	PDF
MG50Q1ZS50 Abstract: No abstract text available Text: MG50Q1ZS50 TOSHIBA GTR Module Silicon N Channel IGBT MG50Q1ZS50 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.3 µs max @Inductive load l Low saturation voltage : VCE (sat) = 3.6 V (max)	Original	MG50Q1ZS50 MG50Q1ZS50	PDF
MG50Q1BS11 Abstract: TOSHIBA IGBT IC 7800 MG50Q1BS1 toshiba 7800 MG50Q1BS11 equivalent Text: MG50Q1BS11 TOSHIBA IGBT Module Silicon N Channel IGBT MG50Q1BS11 High Power Switching Applications Motor Control Applications Unit: mm Enhancement-mode The electrodes are isolated from case. Equivalent Circuit JEDEC ― JEITA ― TOSHIBA 2-33D2A Maximum Ratings Ta = 25°C	Original	MG50Q1BS11 2-33D2A MG50Q1BS11 TOSHIBA IGBT IC 7800 MG50Q1BS1 toshiba 7800 MG50Q1BS11 equivalent	PDF
3 phase ac sinewave phase inverter single ic Abstract: U5J diode Text: MG50Q2YS40 Unit in mm HIGH POW ER SWITCHING APPLICATIONS. M O TO R CONTROL APPLICATIONS. • • • • • • High Input Impedance High Speed tf=0.5/is M ax. trr = 0.5//s(Max.) Low Saturation Voltage : v CE(sat) =4.0V(Max.) Enhancement-Mode Includes a Complete Half Bridge in One	OCR Scan	MG50Q2YS40 2-94D1A 3 phase ac sinewave phase inverter single ic U5J diode	PDF
G50Q2YS50 Abstract: No abstract text available Text: TOSHIBA MG50Q2YS50A TEN TATIVE TO S H IB A G TR M O D U LE SILICO N IM C H A N N EL IG B T MG50Q2YS50A HIGH PO W ER SW ITC H IN G A P P LIC A TIO N S . M O TO R C O N TR O L A P P LIC A TIO N S . High Input Impedance High Speed : tf= 0.3/iS Max. @Inductive Load	OCR Scan	MG50Q2YS50A G50Q2YS50A G50Q2YS50	PDF
Untitled Abstract: No abstract text available Text: T O SH IB A MG50Q6ES40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50Q6ES40 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • The Electrodes are Isolated from Case. • 6 IGBTs are Built Into 1 Package. • Enhancement-Mode • Low Saturation Voltage	OCR Scan	MG50Q6ES40	PDF
Untitled Abstract: No abstract text available Text: TO SHIBA TENTATIVE MG50Q6ES50A TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50Q6ES50A Unit in mm HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • • High Input Impedance High Speed : tf=0.3^s Max. Inductive Load Low Saturation Voltage	OCR Scan	MG50Q6ES50A 961001EAA1	PDF
Untitled Abstract: No abstract text available Text: "TD TOSHIBA O I S C R E T E / O P T O } 9097250 TOSHIBA CDISCRETE/OPTO TOSHIBA Difjj TtHTSSO D01ti070 D 90D 16070 SEMICONDUCTOR DJ-33-3S TOSHIBA GTR MODULE TECHNICAL DATA MG50Q2YK1 SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. Unit in mm	OCR Scan	D01ti070 DJ-33-3S MG50Q2YK1	PDF
Untitled Abstract: No abstract text available Text: T O S H IB A MG50Q1ZS50 MG50Q1ZS50 TO SHIBA GTR M O DU LE SILICON N C HANN EL IGBT Unit in mm HIGH POWER SW ITCHING APPLICATIONS M O TO R CONTROL APPLICATIONS • • • • • High Input Impedance High Speed : tf = 0.3 jus Max. @Inductive Load Low Saturation Voltage	OCR Scan	MG50Q1ZS50	PDF
Untitled Abstract: No abstract text available Text: T O SH IB A MG50Q2YS50A TOSHIBA GTR MODULE TENTATIVE SILICON N CHANNEL IGBT MG50Q2YS50A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed : tf= 0 .3 ^ s Max. @Inductive Load • Low Saturation Voltage : v C E(sat) = 3-6Y (Max.)	OCR Scan	MG50Q2YS50A 961001EAA1	PDF
IRF 24N Abstract: MG50Q2YS50A 294D Text: TOSHIBA MG50Q2YS50A TOSHIBA GTR MODULE TENTATIVE SILICON N CHANNEL IGBT MG50Q2YS50A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf=0.3/*s Max. Inductive Load • Low Saturation Voltage : v CE(sat) = 3-e v (Max.)	OCR Scan	MG50Q2YS50A 2-94D4A 961001EAA1 10//s IRF 24N MG50Q2YS50A 294D	PDF
MG50Q2YS50A Abstract: No abstract text available Text: TO SH IBA MG50Q2YS50A TOSHIBA GTR MODULE TENTATIVE SILICON N CHANNEL IGBT MG50Q2YS50A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf=0.3/^s Max. /^ \T _3_J.*_T _3 ig /iu u u cu v e L/uau	OCR Scan	MG50Q2YS50A 2-94D4A MG50Q2YS50A	PDF

Untitled Abstract: No abstract text available Text: T O SH IB A MG50Q2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Mß>;nn?Y^in Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • High Input Impedance High Speed : tf=0.5/^s Max. (Max.) Low Saturation Voltage • S SI Cl 2 3 ± 0.5 2 3 ± 0.5	OCR Scan	MG50Q2YS40	PDF
MG50Q2YS40 Abstract: No abstract text available Text: TO SH IBA MG50Q2YS40 TO SH IBA GTR M O D U L E SILICON N C H A N N EL IGBT MG50Q2YS40 U n it in mm HIGH PO W ER SW ITCHING APPLICATIONS. M O T O R C O NTRO L APPLICATIONS. • H igh In p u t Im pedance • H ig h s p e e d : tf= 0.5/iS Max. trr = 0,5/.s (Max.)	OCR Scan	MG50Q2YS40 1256C MG50Q2YS40	PDF
MG50Q2YK1 Abstract: No abstract text available Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG50Q2YK1 HIGH POWER SWITCHING APPLICATIONS. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL Collector-Base Voltage VCBO Collector-Emitter Sustaining Voltage Emitter-Base Voltage Collector Current Forward Current	OCR Scan	MG50Q2YK1 MG50Q2YK1	PDF
DC MOTOR CONTROL IGBT Abstract: ES50A Text: TO SHIBA TENTATIVE MG50Q6ES50A TOSHIBA GTR MODULE MG50Q SILICON N CHANNEL IGBT ES50A Unit in mm HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • • High Input Impedance High Speed : tf=0.3^s Max. Inductive Load Low Saturation Voltage	OCR Scan	MG50Q6ES50A MG50Q ES50A 961001EAA1 DC MOTOR CONTROL IGBT ES50A	PDF
MG50Q2YS40 Abstract: VQE 12 61jl Text: TOSHIBA MG50Q2YS40 MG50Q2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • 4 -FAST-ON-TAB # 1 1 0 2 - 0 5 .6 1 0 . 3 High Input Impedance High Speed : tf= 0.5/^s Max. trr = 0.5/^s (Max.)	OCR Scan	MG50Q2YS40 2-94D1A MG50Q2YS40 VQE 12 61jl	PDF
Untitled Abstract: No abstract text available Text: MG50Q1BS11 TOSHIBA MG 5 0 Q 1 BS 1 1 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. High Input Impedance HighSpeed : tf=1.0,«s Max. Low Saturation Voltage : VQE(sat) = 2.7V (Max.) Enhancement-Mode	OCR Scan	MG50Q1BS11 120oltage.	PDF
MG50Q2YS40 Abstract: No abstract text available Text: TO SH IBA MG50Q2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50Q2YS40 Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • • • 3 -M 5 High Input Impedance High Speed : tf= 0.5/^s Max. trr = 0.5^8 (Max.) Low Saturation Voltage	OCR Scan	MG50Q2YS40 2-94D1A MG50Q2YS40	PDF
IGBT 200A 1200V Abstract: T0247 T0220AB BUP313D IGBT IRG4BC20KD igbt 20A 1200v IGBT 1200V 60A T0247A BUP314D MG50Q2YS40 Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su electronics Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi h MOflynM IGBT b an^aBMTHOM nop^AKe BUP203 (T0220) KpaTKoe onMcaHMe MG50Q2YS40 BUP212 BUP213 BUP313 BUP313D BUP314 BUP314D GT20D101-T0s GT20D201-T0s HGTG12N60A4D HGTG30N60B3D	OCR Scan	bup203 t0220) BUP212 BUP213 BUP313 BUP313D BUP314 BUP314D GT20D101-T0s GT20D201-T0s IGBT 200A 1200V T0247 T0220AB BUP313D IGBT IRG4BC20KD igbt 20A 1200v IGBT 1200V 60A T0247A BUP314D MG50Q2YS40	PDF
MG50Q2YS91 Abstract: 9t2 transistor ic 7800 MG50Q2YS9 PW03840796 Text: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG50Q2YS91 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features • High input impedance • High speed: • • • • tf = 1 .O^is Max. V = 0.5ns (Max.)	OCR Scan	MG50Q2YS91 PW03840796 MG50Q2YS91 9t2 transistor ic 7800 MG50Q2YS9	PDF
MG50Q6ES40 Abstract: g50q6es40 Text: TOSHIBA MG50Q6ES40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50Q6ES40 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • The Electrodes are Isolated from Case. • 6 IGBTs are Built Into 1 Package. • Enhancement-Mode • Low Saturation Voltage	OCR Scan	MG50Q6ES40 G50Q6ES40 2-94B1A 961001EAA2 MG50Q6ES40 g50q6es40	PDF

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MG50Q Search Results

MG50Q Price and Stock

Toshiba America Electronic Components MG50Q2YS50ACG

MG50Q Datasheets (40)

MG50Q Datasheets Context Search

Untitled

MG50Q1ZS50

MG50Q2YS50

MG50Q1ZS50

MG50Q1BS11

3 phase ac sinewave phase inverter single ic

G50Q2YS50

Untitled

Untitled

Untitled

Untitled

Untitled

IRF 24N

MG50Q2YS50A

Untitled

MG50Q2YS40

MG50Q2YK1

DC MOTOR CONTROL IGBT

MG50Q2YS40

Untitled

MG50Q2YS40

IGBT 200A 1200V

MG50Q2YS91

MG50Q6ES40