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    MG50Q6ES40 Search Results

    MG50Q6ES40 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MG50Q6ES40 Toshiba GTR Module Silicon N Channel IGBT Scan PDF
    MG50Q6ES40 Toshiba N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) Scan PDF

    MG50Q6ES40 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A MG50Q6ES40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50Q6ES40 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • The Electrodes are Isolated from Case. • 6 IGBTs are Built Into 1 Package. • Enhancement-Mode • Low Saturation Voltage


    OCR Scan     		MG50Q6ES40 PDF

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A MG50Q6ES40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M C>;noRF<;in HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • The Electrodes are Isolated from Case. • 6 IGBTs are Built Into 1 Package. • Enhancement-Mode • Low Saturation Voltage


    OCR Scan     		MG50Q6ES40 Te--25 PDF

    MG50Q6ES40

    Abstract: g50q6es40
    Text: TOSHIBA MG50Q6ES40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50Q6ES40 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • The Electrodes are Isolated from Case. • 6 IGBTs are Built Into 1 Package. • Enhancement-Mode • Low Saturation Voltage


    OCR Scan     		MG50Q6ES40 G50Q6ES40 2-94B1A 961001EAA2 MG50Q6ES40 g50q6es40 PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA MG50Q6ES40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50Q6ES40 HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • The Electrodes are Isolated from Case. • 6 IGBTs are Built Into 1 Package. • Enhancement-Mode • Low Saturation Voltage


    OCR Scan     		MG50Q6ES40 PDF

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A MG50Q6ES40 T O S H IB A GTR M O D U L E SILICO N N C H A N N E L IGBT MG50Q6ES40 H IGH P O W E R SW IT C H IN G APPLIC ATIO N S. M O T O R C O N T R O L APPLIC ATIO N S. • T h e E lectro d e s are Iso lated from C ase. • 6 IG B T s a re B u ilt Into 1 P ack ag e.


    OCR Scan     		MG50Q6ES40 961001EAA2 PDF

    GT250101

    Abstract: MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9
    Text: Insulated ìate Bipolar Transistors (IG BTs Milestones in IGBT Technology In 1986, Toshiba started the production of its 1st Generation 1000V IGBTs. With the introduction of Toshiba’s 2nd Generation in 1989, IGBTs were made available in High Speed and Low Saturation types for both a 600V and a


    OCR Scan     		2-99A1A 2-99B1A GT250101 MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9 PDF

    MG15J6ES40

    Abstract: MG150Q2YS40 MG300J2YS50 MG300Q2YS40 MG75Q2YS40 MG25Q2YS40 MG200Q2YS40 MG300Q2YS4
    Text: .2 Short-Circuit Guarantee General conditions Tim e b etw een short-circuits > 1 A llowed n u m b er o f short-circuits 100 Junction tem peratu re before short-circuit < 125 s °C Electrical Conditions for 600 V Types T ype No. Rg min / £2 VCE/V VCEP/V MG15J6ES40


    OCR Scan     		MG15J6ES40 MG2SJ6KS40 MG50J2YS50 MG50J6KS50 MG75J2YS50 MG75J6KS50 100J2YS50 MG100J6KS50 MG150J2YS50 MG200J2YS50 MG150Q2YS40 MG300J2YS50 MG300Q2YS40 MG75Q2YS40 MG25Q2YS40 MG200Q2YS40 MG300Q2YS4 PDF

    MG40001US41

    Abstract: MG806ES42 MG15J6ES40 MG75J2YS50 MG100Q2YS42 mg300q1us41 MG50Q2YS40 mg150j1 MG100J2YS50
    Text: Promotion Line-up Discretes s s i s « I I 1 S 1 * III » 5-5 -OIlfOh- I1! S3 « 13If*Sm * ¡1 If «C * sSagafS & S5 é<5£ 2* If o^ • Ifii O£K D 3 ilif £ § Iti o p I| § 1 5«SS is y— § 8 I 1 •Sf11 4 î $ Ì.W « »a N n 1M 1« m us YS MG40J2YS50


    OCR Scan     		MG400J1US51 MG800J1US51 MG300J1US51 MG40J2YS50 MG75J2YS50 MG100J2YS50 MG150J2YS50 MG200J2YS50 MG400J2VS50 MG2SJ6ES40 MG40001US41 MG806ES42 MG15J6ES40 MG75J2YS50 MG100Q2YS42 mg300q1us41 MG50Q2YS40 mg150j1 MG100J2YS50 PDF

    MG200J2YS50

    Abstract: 2-94D4A MG75Q2YS50 MG300J2YS50 2-109C1A MG200Q1US41 MG300Q1US41 MG300Q1US51 MG400J2YS50 mg200q2ys50
    Text: MHTEPTEKC www.i-t.su [email protected] Ten: 495 739-09-95, 644-41-29 M o A y n u IG B T $ u p M b i T o s h i b a fln a n a 3 0 H p a 6 o H nxT eM ne paT yp np0M3B0AMTenb Kofl: Uce lc Icm :o t -4 0 °C a o + 1 2 5 °C : T o s h ib a Ucesat npH lc Tr(typ.j Tf(typ.)


    OCR Scan     		flnana30H ot-40Â MG200Q1US41 2-109A4A MG300Q1US41 MG300Q1US51 2-109F1A MG400Q1US41 MG200J2YS50 2-94D4A MG75Q2YS50 MG300J2YS50 2-109C1A MG400J2YS50 mg200q2ys50 PDF

    IGBT 200A 1200V

    Abstract: T0247 T0220AB BUP313D IGBT IRG4BC20KD igbt 20A 1200v IGBT 1200V 60A T0247A BUP314D MG50Q2YS40
    Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su electronics Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi h MOflynM IGBT b an^aBMTHOM nop^AKe BUP203 (T0220) KpaTKoe onMcaHMe MG50Q2YS40 BUP212 BUP213 BUP313 BUP313D BUP314 BUP314D GT20D101-T0s GT20D201-T0s HGTG12N60A4D HGTG30N60B3D


    OCR Scan     		bup203 t0220) BUP212 BUP213 BUP313 BUP313D BUP314 BUP314D GT20D101-T0s GT20D201-T0s IGBT 200A 1200V T0247 T0220AB BUP313D IGBT IRG4BC20KD igbt 20A 1200v IGBT 1200V 60A T0247A BUP314D MG50Q2YS40 PDF

    MG50Q6ES40

    Abstract: MG5006ES40
    Text: MG5006ES40 U nit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • The Electrodes are Isolated from Case. • 6 IGBTs are B uilt Into 1 Package. • Enhancem ent'M ode • Low S aturation Voltage ; v C E sat =4.0V (M ax.) • High Speed: tf= 0 .5 ^s(M ax .)


    OCR Scan     		MG5006ES40 MG50Q6ES40 MG50Q6ES40 MG5006ES40 PDF

    G50Q2YS40

    Abstract: MG8Q6ES42 GT8Q102 mg300q1us41 GT60M301 MIG50J904H gt15j103 MIG30J103H MG25Q6ES50A mg150q1js
    Text: TOSHIBA [1 ] Product List [ 1 ] Product List Product No. GT10G101 GT10J301 GT10J311 GT10Q301 GT10Q 311 GT15G101 GT15J101 GT15J102 GT15J103 SM GT15Q101 GT15Q301 GT15Q 311 GT20D101 GT20D201 GT20G101 GT20G101 (SM) GT20G102 GT20G102 (SM) GT20J301 GT20J311 GT25G101


    OCR Scan     		GT10G101 GT10J301 GT10J311 GT10Q301 GT10Q GT15G101 GT15J101 GT15J102 GT15J103 GT15Q101 G50Q2YS40 MG8Q6ES42 GT8Q102 mg300q1us41 GT60M301 MIG50J904H gt15j103 MIG30J103H MG25Q6ES50A mg150q1js PDF

    MG50Q6ES41

    Abstract: MG8QES42 mg200q2ys11 MG75Q2YS1 MG100Q2YS42 MP6750 MG100Q2YS11 mg50j1bs11 MG300J1US1 GT15J101
    Text: Suggested IGBTs For o-Phase Inverters Suggested IGBTs For 3-Phase Inverters Inverter 220 VAC Input Brake Section Inverter Section 440 VAC Input Brake Section Inverter Section f < 5 kHz f > 5 kHz 600 VAC Input Inverter HP (kW) (kVA) 1 0.75 1.5 GT15J101 MP6750


    OCR Scan     		GT15J101 MG25J1BS11 MG50J1BS11 MG50J1E1S11 MG75J1BS11 GT15Q101 GT25Q101 MG50Q6ES41 MG8QES42 mg200q2ys11 MG75Q2YS1 MG100Q2YS42 MP6750 MG100Q2YS11 MG300J1US1 PDF

    MG50Q6es41

    Abstract: MG8QES42 GT15J101 MG75Q2YS11 MG25Q6ES42 MG100Q2YS42 MG300Q1US41 MG300Q2YS MG50Q1BS1 MG150Q2YS1
    Text: Suggested KìBTs For 3-Phase Inverters Suggested IGBTs For 3-Phase Inverters 220 V A C Input Inverter Brake Inverter Brake Section Section Section 440 VAC Input 600 VAC Input Inverter Section Inverter f < 5 kHz f > 5 kHz GT15Q101 MG8Q6ES42 MG8QES42 - MP6752


    OCR Scan     		GT15J101 MG25J1BS11 MG50J1BS11 MG75J1BS11 MP6750 MP6752 MG25J6ES40 MG50Q6es41 MG8QES42 MG75Q2YS11 MG25Q6ES42 MG100Q2YS42 MG300Q1US41 MG300Q2YS MG50Q1BS1 MG150Q2YS1 PDF

    MG75J2YS40

    Abstract: MG100J2YS45 MG50J2YS45 MG150J2YS45 MG300Q1US MG400Q1US11 MG400J2YS40 MG150J2YS40 MG200Q2YS1 MG200J2YS45
    Text: Insulated Gate Bipolar Transistors IGBTs Milestones in IGBT Technology In 1986, Toshiba started the production of its 1st Generation 1000V IGBTs. With the introduction of Toshiba’s 2nd Generation in 1989, IGBTs were made available in High Speed and Low Saturation types for both a 600V and a


    OCR Scan     		2-109C1A MG50J6ES50 MG75J6ES50 2-94A2A MG100J6ES50 MG50Q6ES11 MIG150J201H MIG200J201H MIG75Q201H MIG100Q201H MG75J2YS40 MG100J2YS45 MG50J2YS45 MG150J2YS45 MG300Q1US MG400Q1US11 MG400J2YS40 MG150J2YS40 MG200Q2YS1 MG200J2YS45 PDF

    MG75J2YS40

    Abstract: MG200J2YS45 MG50J6ES40 MG150J2YS40 MG200J2YS40 MG100j2YS40 20L6P44 MG150J2YS45 MG100J6ES40 10L6P44
    Text: UL Approved Devices Key to devices not listed in Recognized Components Directory, 1993 Edition ‘ Approved since 2/12/93, may need early authorization letter for customers. Toshiba Part # Secti UL FILE #E87989 MG100J1BS11 MG100J2YS1 MG100J2YS9 MG100J2YS40


    OCR Scan     		E87989 MG100J1BS11 MG100J2YS1 MG100J2YS9 MG100J2YS40 MG100J2YS91 MG100J6ES1 MG100J6ES40 MG100J6ES45 MG100J6ES91 MG75J2YS40 MG200J2YS45 MG50J6ES40 MG150J2YS40 MG200J2YS40 20L6P44 MG150J2YS45 10L6P44 PDF