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    NSS1C300ET4G Price and Stock

    onsemi NSS1C300ET4G

    TRANS PNP 100V 3A DPAK
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    DigiKey NSS1C300ET4G Cut Tape 23,861 1
    • 1 $1.12
    • 10 $0.752
    • 100 $1.12
    • 1000 $0.38453
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    NSS1C300ET4G Digi-Reel 23,861 1
    • 1 $1.12
    • 10 $0.752
    • 100 $1.12
    • 1000 $0.38453
    • 10000 $0.38453
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    NSS1C300ET4G Reel 20,000 2,500
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    • 10000 $0.32562
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    Avnet Americas NSS1C300ET4G Reel 10 Weeks 2,500
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    • 10000 $0.31012
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    Mouser Electronics NSS1C300ET4G 7,352
    • 1 $1.11
    • 10 $0.752
    • 100 $0.522
    • 1000 $0.385
    • 10000 $0.325
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    Verical NSS1C300ET4G 5,000 2,500
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    • 10000 $0.1948
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    Arrow Electronics NSS1C300ET4G 5,000 10 Weeks 2,500
    • 1 $0.312
    • 10 $0.312
    • 100 $0.312
    • 1000 $0.312
    • 10000 $0.1948
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    Newark NSS1C300ET4G Cut Tape 3,749 5
    • 1 $0.894
    • 10 $0.737
    • 100 $0.574
    • 1000 $0.396
    • 10000 $0.396
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    NSS1C300ET4G Reel 2,500
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    • 10000 $0.338
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    Future Electronics NSS1C300ET4G Reel 10 Weeks 5,000
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    • 10000 $0.305
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    NSS1C300ET4G Reel 10 Weeks 5,000
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    • 10000 $0.305
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    Onlinecomponents.com NSS1C300ET4G
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    • 10000 $0.3199
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    Avnet Asia NSS1C300ET4G 10 Weeks 2,500
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    • 10000 $0.33831
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    Avnet Silica NSS1C300ET4G 11 Weeks 2,500
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    EBV Elektronik NSS1C300ET4G 12 Weeks 2,500
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    Wuhan P&S NSS1C300ET4G 1,950 1
    • 1 $0.91
    • 10 $0.91
    • 100 $0.58
    • 1000 $0.44
    • 10000 $0.44
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    Others NSS1C300ET4G

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    Chip 1 Exchange NSS1C300ET4G 2,925
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    NSS1C300ET4G Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NSS1C300ET4G On Semiconductor NSS1C300 - TRANSISTOR 3 A, 100 V, PNP, Si, POWER TRANSISTOR, LEAD FREE, PLASTIC, CASE 369C-01, DPAK-3, BIP General Purpose Power Original PDF

    NSS1C300ET4G Datasheets Context Search

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    NSS1C300ET4G

    Abstract: NSS1C300E
    Text: NSS1C300ET4G 100 V, 3.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e 2 PowerEdge family of low V CE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications where


    Original     		PDF NSS1C300ET4G NSS1C300E/D NSS1C300E

    Untitled

    Abstract: No abstract text available
    Text: NSS1C300ET4G 100 V, 3.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e 2 PowerEdge family of low V CE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications where


    Original     		PDF NSS1C300ET4G NSS1C300E/D

    Untitled

    Abstract: No abstract text available
    Text: NSS1C300ET4G 100 V, 3.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications where


    Original     		PDF NSS1C300ET4G NSS1C300E/D

    Untitled

    Abstract: No abstract text available
    Text: NSS1C300ET4G 100 V, 3.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e 2 PowerEdge family of low V CE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications where


    Original     		PDF NSS1C300ET4G NSS1C300E/D

    Untitled

    Abstract: No abstract text available
    Text: NSS1C300ET4G 100 V, 3.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e 2 PowerEdge family of low V CE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications where


    Original     		PDF NSS1C300ET4G NSS1C300E/D

    Untitled

    Abstract: No abstract text available
    Text: NSS1C300ET4G 100 V, 3.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e 2 PowerEdge family of low V CE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications where


    Original     		PDF NSS1C300ET4G NSS1C300E/D

    Untitled

    Abstract: No abstract text available
    Text: NSS1C300ET4G 100 V, 3.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e 2 PowerEdge family of low V CE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications where


    Original     		PDF NSS1C300ET4G NSS1C300E/D

    Untitled

    Abstract: No abstract text available
    Text: NSS1C301ET4G 100 V, 3.0 A, Low VCE sat NPN Transistor ON Semiconductor’s e 2 PowerEdge family of low V CE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications where


    Original     		PDF NSS1C301ET4G NSS1C301E/D

    Untitled

    Abstract: No abstract text available
    Text: NSS1C301ET4G 100 V, 3.0 A, Low VCE sat NPN Transistor ON Semiconductor’s e 2 PowerEdge family of low V CE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications where


    Original     		PDF NSS1C301ET4G NSS1C301E/D