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    NSS1C301ET4G Price and Stock

    onsemi NSS1C301ET4G

    TRANS NPN 100V 3A DPAK
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    DigiKey NSS1C301ET4G Cut Tape 6,069 1
    • 1 $0.81
    • 10 $0.541
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    • 1000 $0.269
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    NSS1C301ET4G Digi-Reel 6,069 1
    • 1 $0.81
    • 10 $0.541
    • 100 $0.81
    • 1000 $0.269
    • 10000 $0.269
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    NSS1C301ET4G Reel 5,000 2,500
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    • 10000 $0.24126
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    Avnet Americas NSS1C301ET4G Reel 8 Weeks 5,000
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    • 10000 $0.20482
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    Mouser Electronics NSS1C301ET4G 6,860
    • 1 $0.76
    • 10 $0.538
    • 100 $0.372
    • 1000 $0.269
    • 10000 $0.212
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    Arrow Electronics NSS1C301ET4G 2,500 8 Weeks 2,500
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    Newark NSS1C301ET4G Cut Tape 6,914 5
    • 1 $0.666
    • 10 $0.56
    • 100 $0.396
    • 1000 $0.286
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    NSS1C301ET4G Reel 2,500
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    Future Electronics NSS1C301ET4G Reel 8 Weeks 5,000
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    Onlinecomponents.com NSS1C301ET4G
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    Rochester Electronics NSS1C301ET4G 1,676 1
    • 1 $0.2361
    • 10 $0.2361
    • 100 $0.2219
    • 1000 $0.2007
    • 10000 $0.2007
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    Avnet Silica NSS1C301ET4G 2,500 9 Weeks 2,500
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    Chip1Stop NSS1C301ET4G Cut Tape 2,050
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    • 10 $0.494
    • 100 $0.349
    • 1000 $0.277
    • 10000 $0.277
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    EBV Elektronik NSS1C301ET4G 2,500 10 Weeks 2,500
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    Flip Electronics NSS1C301ET4G 1,428
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    New Advantage Corporation NSS1C301ET4G 2,500 1
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    • 10000 $0.3935
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    Win Source Electronics NSS1C301ET4G 12,000
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    • 1000 $0.2025
    • 10000 $0.1698
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    Wuhan P&S NSS1C301ET4G 7,500 1
    • 1 $0.6
    • 10 $0.6
    • 100 $0.38
    • 1000 $0.29
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    Aptina Imaging NSS1C301ET4G

    Trans GP BJT NPN 100V 3A 2100mW 3-Pin(2+Tab) DPAK T/R
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    Verical NSS1C301ET4G 2,500 2,500
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    • 10000 $0.2115
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    NSS1C301ET4G 1,676 1,495
    • 1 -
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    • 100 -
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    • 10000 $0.2509
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    Others NSS1C301ET4G

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    Chip 1 Exchange NSS1C301ET4G 16,120
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    NSS1C301ET4G Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NSS1C301ET4G On Semiconductor NSS1C301 - TRANSISTOR 3 A, 100 V, NPN, Si, POWER TRANSISTOR, ROHS COMPLIANT, PLASTIC, CASE 396C, DPAK-3, BIP General Purpose Power Original PDF

    NSS1C301ET4G Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1C31EG

    Abstract: 617 300
    Text: NSS1C301ET4G 100 V, 3.0 A, Low VCE sat NPN Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications where


    Original
    PDF NSS1C301ET4G NSS1C301E/D 1C31EG 617 300

    Untitled

    Abstract: No abstract text available
    Text: NSS1C301ET4G 100 V, 3.0 A, Low VCE sat NPN Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications where


    Original
    PDF NSS1C301ET4G NSS1C301E/D

    Untitled

    Abstract: No abstract text available
    Text: NSS1C301ET4G 100 V, 3.0 A, Low VCE sat NPN Transistor ON Semiconductor’s e 2 PowerEdge family of low V CE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications where


    Original
    PDF NSS1C301ET4G NSS1C301E/D

    Untitled

    Abstract: No abstract text available
    Text: NSS1C301ET4G 100 V, 3.0 A, Low VCE sat NPN Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications where


    Original
    PDF NSS1C301ET4G NSS1C301E/D

    Untitled

    Abstract: No abstract text available
    Text: NSS1C301ET4G 100 V, 3.0 A, Low VCE sat NPN Transistor ON Semiconductor’s e 2 PowerEdge family of low V CE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications where


    Original
    PDF NSS1C301ET4G NSS1C301E/D

    Untitled

    Abstract: No abstract text available
    Text: NSS1C301ET4G 100 V, 3.0 A, Low VCE sat NPN Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications where


    Original
    PDF NSS1C301ET4G NSS1C301E/D

    Untitled

    Abstract: No abstract text available
    Text: NSS1C300ET4G 100 V, 3.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e 2 PowerEdge family of low V CE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications where


    Original
    PDF NSS1C300ET4G NSS1C300E/D