Untitled
Abstract: No abstract text available
Text: Si7960DP New Product Vishay Siliconix Dual N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (Ω) ID (A) 0.021 @ VGS = 10 V 9.7 0.025 @ VGS = 4.5 V 8.9 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr D Dual MOSFET for Space Savings
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Si7960DP
Si7960DP-T1--E3
18-Jul-08
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4164-2
Abstract: 73041 SI7107DN
Text: Si7107DN New Product Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.0108 @ VGS = -4.5 V -15.3 0.015 @ VGS = -2.5 V -13.0 0.020 @ VGS = -1.8 V -11.2 -20 D TrenchFETr Power MOSFETS: 1.8-V Rated D Ultra Low On-Resistance for Increased Battery Life
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Si7107DN
07-mm
Si7107DN-T1
S-41642--Rev.
13-Sep-04
4164-2
73041
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Untitled
Abstract: No abstract text available
Text: Si7114DN New Product Vishay Siliconix N-Channel 30-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.0075 @ VGS = 10 V 18.3 0.010 @ VGS = 4.5 V 15.9 D TrenchFETr Gen II Power MOSFET D New Low Thermal Resistance PowerPAKr
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Si7114DN
07-mm
Si7114DN-T1
S-41643--Rev.
13-Sep-04
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Si4992EY-T1-E3
Abstract: Si4992EY
Text: Si4992EY New Product Vishay Siliconix Dual N-Channel 75-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D High-Efficiency PWM Optimized PRODUCT SUMMARY VDS (V) 75 rDS(on) (Ω) ID (A) 0.048 @ VGS = 10 V 4.8 0.062 @ VGS = 4.5 V
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Si4992EY
Si4992EY--E3
Si4992EY-T1--E3
S-41640--Rev.
06-Sep-04
Si4992EY-T1-E3
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Untitled
Abstract: No abstract text available
Text: Si5908DC New Product Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.040 @ VGS = 4.5 V 5.9 0.045 @ VGS = 2.5 V 5.6 0.052 @ VGS = 1.8 V 5.2 D TrenchFETr Power MOSFETS D Ultra Low rDS(on) and Excellent Power
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Si5908DC
Si5908DC-T1--E3
18-Jul-08
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Si7960DP
Abstract: SI7960DP-T1-E3
Text: Si7960DP New Product Vishay Siliconix Dual N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (Ω) ID (A) 0.021 @ VGS = 10 V 9.7 0.025 @ VGS = 4.5 V 8.9 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr D Dual MOSFET for Space Savings
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Si7960DP
Si7960DP-T1--E3
S-41646--Rev.
06-Sep-04
SI7960DP-T1-E3
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Untitled
Abstract: No abstract text available
Text: Si7422DN New Product Vishay Siliconix N-Channel 20-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.0061 @ VGS = 10 V 20.3 0.0077 @ VGS = 4.5 V 18.1 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile
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Si7422DN
07-mm
Si7422DN-T1
S-41644--Rev.
13-Sep-04
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"MARKING CODE CC"
Abstract: No abstract text available
Text: Si5908DC New Product Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.040 @ VGS = 4.5 V 5.9 0.045 @ VGS = 2.5 V 5.6 0.052 @ VGS = 1.8 V 5.2 D TrenchFETr Power MOSFETS D Ultra Low rDS(on) and Excellent Power
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Si5908DC
Si5908DC-T1--E3
S-41641--Rev.
06-Sep-04
"MARKING CODE CC"
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Si7806ADN
Abstract: 41645
Text: Si7806ADN New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.011 @ VGS = 10 V 14 0.016 @ VGS = 4.5 V 12 D TrenchFETr Power MOSFET D PWM Optimized D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile
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Si7806ADN
07-mm
Si7806ADN-T1--E3
S-41645--Rev.
06-Sep-04
41645
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SI7960DP-T1-E3
Abstract: Si7960DP
Text: Si7960DP New Product Vishay Siliconix Dual N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (Ω) ID (A) 0.021 @ VGS = 10 V 9.7 0.025 @ VGS = 4.5 V 8.9 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr D Dual MOSFET for Space Savings
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Original
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Si7960DP
Si7960DP-T1--E3
08-Apr-05
SI7960DP-T1-E3
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Untitled
Abstract: No abstract text available
Text: Si4992EY New Product Vishay Siliconix Dual N-Channel 75-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D High-Efficiency PWM Optimized PRODUCT SUMMARY VDS (V) 75 rDS(on) (Ω) ID (A) 0.048 @ VGS = 10 V 4.8 0.062 @ VGS = 4.5 V
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Si4992EY
Si4992EY--E3
Si4992EY-T1--E3
08-Apr-05
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ChipFET
Abstract: si5908
Text: Si5908DC New Product Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.040 @ VGS = 4.5 V 5.9 0.045 @ VGS = 2.5 V 5.6 0.052 @ VGS = 1.8 V 5.2 D TrenchFETr Power MOSFETS D Ultra Low rDS(on) and Excellent Power
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Original
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Si5908DC
Si5908DC-T1--E3
08-Apr-05
ChipFET
si5908
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A11t
Abstract: No abstract text available
Text: S416400, S416400P, TMS417400, TMS417400P TMS426400, TMS426400P, TMS427400, TMS427400P 4194304-WORD BY 4-BIT HIGH-SPEED DRAMS SMKS881 A - MAY 1995 - REVISEDJUNE1995 Electrical characteristics for TM S416400/P and TM S417400/P is Production Data. Electrical
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TMS416400,
TMS416400P,
TMS417400,
TMS417400P
TMS426400,
TMS426400P,
TMS427400,
TMS427400P
4194304-WORD
SMKS881
A11t
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417400
Abstract: 77261 T 2109 TMS416400 TMS416400P TMS417400 TMS417400P TMS426400 TMS426400P TMS427400
Text: S416400, S416400P, TMS417400, TMS417400P TMS426400, TMS426400P, TMS427400, TMS427400P 4194304-WORD BY 4-BIT HIGH-SPEED DRAMS SM KS881A - MAY 1 9 9 5 - REVISEDJUNE1995 Electrical characteristics for TM S416400/P and TM S417400/P is Production Data. Electrical
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TMS416400,
TMS416400P,
TMS417400,
TMS417400P
TMS426400,
TMS426400P,
TMS427400,
TMS427400P
4194304-WORD
SMKS881A-
417400
77261
T 2109
TMS416400
TMS416400P
TMS417400
TMS426400
TMS426400P
TMS427400
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TMS4161
Abstract: No abstract text available
Text: TMS4161 65,536 BIT MULTIPORT VIDEO RAM JU LY 1 9 8 3 —REVISED NOVEMBER 1 9 8 5 N PACKAGE Dual Accessibility — One Port Sequential Access, One Port Random Access TOP VIEW Four Cascaded 64-B it Serial Shift Registers for Sequential Access Applications
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TMS4161
S4164
536-BIT
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4164 dynamic ram
Abstract: 4164 ram tlu 011 TM4164 RAM 4164 DYNAMIC RAM 65536 TEXAS
Text: TM4164FL8. TM4164FM8 65,536 BY 8-BIT DYNAMIC RAM MODULES NOVEMBER 1983 - . L S IN G L E-IN -U N E P A C K A G E * . . M SIN GLE-IN -LINE PACKAGE TM 4164FL8 . TM 4164FM 8 6 5 .5 3 6 X 8 Organization Single 5 -V Supply 1 0 % Tolerance (TO P V IE W ) Long Refresh Period . . . 4 ms (2 5 6 Cycles)
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TM4164FL8.
TM4164FM8
30-Pin
TM4164_
4164 dynamic ram
4164 ram
tlu 011
TM4164
RAM 4164
DYNAMIC RAM 65536 TEXAS
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77261
Abstract: trc 20020
Text: S416400A, TMS417400A 4194304 BY 4-BTT DYNAMIC RANDOM-ACCESS MEMORIES _ SM KSa89B- AUGUST 1996 - REVISED OCTOBER 1997 This data sheet is applicable to all TMS41x400As symbolized by Revision “B”, Revision “E” and subsequent revisions as
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TMS416400A,
TMS417400A
KSa89B-
TMS41x400As
2048-Cycle
4096-Cycle
TMS416400A
77261
trc 20020
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NTC 20D-20
Abstract: 7400P s427400 IC TTL 7400 input leakage current 6400P/P1L-6400/6460/6480P
Text: TMS41 6400, TMS41 6400P, TMS41 7400, TMS41 7400P T M S 426400, TMS426400P, T M S 427400 , T M S 4 2 7 4 0 0 P 41 9 4 3 0 4 -W Q R D B Y 4-BIT H IG H -S P E E D D R A M S SMKS881B - MAY 1995 - REVISED AUGUST 1995 Electrical characteristics for T M S 416400/P and
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TMS41
6400P,
7400P
TMS426400P,
SMKS881B
416400/P
S417400/P
NTC 20D-20
s427400
IC TTL 7400 input leakage current
6400P/P1L-6400/6460/6480P
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Untitled
Abstract: No abstract text available
Text: S416400 4194 304-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY REV A — SMKS640 — JANUARY 1991 DZ Package T o p V ie w < o o Single 5-V Power Supply (10% Tolerance) Performance Ranges: ACCESS ACCESS ACCESS READ TIME TIME TIME OR WRITE tRAC *CAC *AA CYCLE
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TMS416400
304-WORD
SMKS640
KS640
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triac tag 8518
Abstract: 70146 DS3654 X2864AD 7 segment display RL S5220 TC9160 la 4440 amplifier circuit diagram 300 watt philips ecg master replacement guide vtl 3829 A-C4 TCA965 equivalent
Text: 1985 0 / 0 / CONTENTS VOLUME I Introduction to IC MASTER 3 Advertisers’ Index 8 Master Selection Guide Function Index I0 Part Number Index 40 Part Number Guide 300 Logo Guide 346 Application Note Directory 349 Military Parts Directory 50I Testing 506 Cross Reference
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54164
Abstract: No abstract text available
Text: 0> a National Semiconductor 54164/DM74164 8-Bit Serial In/Parallel Out Shift Registers General Description Features These 8-bit shift registers feature gated serial inputs and an asynchronous clear. A low logic level at either serial input inhibits entry of the new data, and resets the first flip-flop to
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54164/DM74164
54164
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4164 ram
Abstract: 4164 dynamic ram RAM 4164 4Q709 4164 4164 (RAM)
Text: TEXAS IN STR { A S I C / M E M O R Y J- 7 7 Ö961725 TEXAS INSTR CASIC/MEMORY D E| 8^1755 D 04 G 7D t , 77C 4 0 7 0 6 3 D TM4164EL9, TM4164FM9 65,536 BY 9-BIT DYNAMIC RAM MODULES NOVEMBER 1983 - REVISED NOVEMBER 1986 6 5 ,5 3 6 X 9 Organization TM 4164EL9 . . . L SINGLE-IN-UNE PACKAGE*
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TM4164EL9,
TM4164FM9
30-Pin
4164EL9
4164FM
4164 ram
4164 dynamic ram
RAM 4164
4Q709
4164
4164 (RAM)
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tms4164
Abstract: 4164-20 TMS4164 65,536 irf 536
Text: S4164 65,536 BIT DYNAMIC RANDOM-ACCESS MEMORY MAV 1985 —REVISED NOVEMBER 1985 This D a ta S hee t Is A p p lic a b le to A ll T M S 4 1 6 4 s S ym b o lize d w ith Code " A " as D e scrib e d on Page 4 -5 7. 6 5 .5 3 6 X 1 Organization • Single 5-V Supply 10% Tolerance
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TMS4164
536-BIT
4164-20
TMS4164 65,536
irf 536
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ic vertical la 78141
Abstract: IC LA 78141 schematic LA 78141 tv application circuit 4116 ram tda 78141 TMS4500 LA 78141 VERTICAL 21L14 mitsubishi elevator circuit diagram 4464 64k dram
Text: MOS Memory Data Book 1984 Commercial and Military Specifications ♦ Texas In str u m en ts Alphanumeric Index, Table of Contents, Selection Guide Interchangeability Guide Glossary/Timing Conventions/Data Sheet Structure Dynamic RAM and Memory Support Devices
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CH-8953
ic vertical la 78141
IC LA 78141 schematic
LA 78141 tv application circuit
4116 ram
tda 78141
TMS4500
LA 78141 VERTICAL
21L14
mitsubishi elevator circuit diagram
4464 64k dram
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