Untitled
Abstract: No abstract text available
Text: Si5476DU New Product Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.034 at VGS = 10 V 12 0.041 at VGS = 4.5 V 12 VDS (V) 60 Qg (Typ) 10 5 nC 10.5 PowerPAKr ChipFETr Single D TrenchFETr Power MOSFET D New Thermally Enhanced PowerPAKr
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Si5476DU
08-Apr-05
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NTHC5513
Abstract: NTHC5513T1
Text: NTHC5513 Power MOSFET Complementary, 20 V, +3.1 A / -2.1 A, ChipFET] Package This complementary N and P channel device was designed with a small footprint package and ON Semiconductor’s leading low RDS(on) technology for increased circuit efficiency. The performance is ideally
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NTHC5513
NTHC5513/D
NTHC5513
NTHC5513T1
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KTHC5513
Abstract: No abstract text available
Text: IC IC SMD Type Power MOSFET KTHC5513 Features Complementary N-Channel and P-Channel MOSFET Leadless SMD Package Featuring Complementary Pair Low RDS on in a ChipFET Package for High Efficiency Performance Low Profile ( 1.10 mm) Allows Placement in Extremely Thin
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KTHC5513
KTHC5513
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si5429
Abstract: marking G2 Si5429DU
Text: Si5429DU Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () Max. ID (A) 0.015 at VGS = - 10 V - 12a 0.022 at VGS = - 4.5 V - 12a • TrenchFET Power MOSFET • Thermally Enhanced PowerPAK® ChipFET® Package
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Si5429DU
Si5429DU-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
si5429
marking G2
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Untitled
Abstract: No abstract text available
Text: Si5484DU Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.016 at VGS = 4.5 V 12 VDS (V) 20 0.021 at VGS = 2.5 V • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK® ChipFET® Package
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Si5484DU
Si5484DU-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: New Product Si5410DU Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 40 0.018 at VGS = 10 V 12 0.021 at VGS = 4.5 V 12 Qg (Typ.) 10 nC PowerPAK ChipFET Single 1 2 Marking Code D 3 D D G D 7 Lot Traceability
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Si5410DU
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: New Product Si5476DU Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 60 0.034 at VGS = 10 V 12 0.041 at VGS = 4.5 V 12 Qg (Typ.) 10.5 nC PowerPAK ChipFET Single 1 2 3 D D Lot Traceability and Date Code 4 G
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Si5476DU
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si5482DU Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 30 0.015 at VGS = 10 V 12 0.0175 at VGS = 4.5 V 12 Qg (Typ.) 16 nC PowerPAK ChipFET Single 1 D AE XXX 4 Lot Traceability and Date Code D D • Load Switch, PA Switch, and Battery Switch
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Si5482DU
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si5485DU Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.025 at VGS = - 4.5 V - 12a 0.042 at VGS = - 2.5 V a - 12 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK® ChipFET® Package
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Si5485DU
Si5485DU-T1-electronic
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si5938DU Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.039 at VGS = 4.5 V 6 0.045 at VGS = 2.5 V 6 0.055 at VGS = 1.8 V 6 VDS (V) 20 Qg (Typ.) 6 nC PowerPAK ChipFET Dual CA G1 XXX 3 4 S2 D2 Part # Code G2
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Si5938DU
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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ChipFET
Abstract: NTHS5443T1
Text: NTHS5443T1 Power MOSFET P-Channel ChipFETE 3.6 Amps, 20 Volts Features • Low RDS on for Higher Efficiency • Logic Level Gate Drive • Miniature ChipFET Surface Mount Package Saves Board Space http://onsemi.com 3.6 AMPS 20 VOLTS RDS(on) = 65 mW Applications
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NTHS5443T1
r14525
NTHS5443T1/D
ChipFET
NTHS5443T1
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si5936
Abstract: S12 MARKING CODE DIODE
Text: New Product Si5936DU Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () Max. ID (A)a 0.030 at VGS = 10 V 6 0.040 at VGS = 4.5 V 6 PowerPAK ChipFET Dual • TrenchFET Power MOSFET • Thermally Enhanced PowerPAK®
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Si5936DU
Si5936DU-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
si5936
S12 MARKING CODE DIODE
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Untitled
Abstract: No abstract text available
Text: Si5944DU Vishay Siliconix Dual N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) ID (A) 0.112 at VGS = 10 V 6a 0.171 at VGS = 4.5 V 4.9 Qg (Typ.) 2.2 nC PowerPAK ChipFET Dual 1 CC G1 4 S2 D1 7 D1 D2 Part # Code G2 D2 6 COMPLIANT
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Si5944DU
Si5944DU-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Si5475DC
Abstract: Si5475DC-T1
Text: Si5475DC Vishay Siliconix P-Channel 12-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.031 @ VGS = -4.5 V -7.6 -12 0.041 @ VGS = -2.5 V -6.6 0.054 @ VGS = -1.8 V -5.8 S 1206-8 ChipFETt 1 D D G D D D D G S Marking Code BF XX Lot Traceability
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Si5475DC
Si5475DC-T1
S-21251--Rev.
05-Aug-02
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SI5476DU-T1-E3
Abstract: Si5476DU
Text: Si5476DU New Product Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.034 at VGS = 10 V 12 0.041 at VGS = 4.5 V 12 VDS (V) 60 Qg (Typ) 10 5 nC 10.5 PowerPAKr ChipFETr Single D TrenchFETr Power MOSFET D New Thermally Enhanced PowerPAKr
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Si5476DU
08-Apr-05
SI5476DU-T1-E3
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NTHD4401P
Abstract: NTHD4401PT1 NTHD4401PT1G
Text: NTHD4401P Power MOSFET −20 V, −3.0 A, Dual P−Channel, ChipFETt Features • Low RDS on and Fast Switching Speed in a ChipFET Package • Leadless ChipFET Package 40% Smaller Footprint than TSOP−6 • ChipFET Package with Excellent Thermal Capabilities where Heat
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NTHD4401P
NTHD4401P/D
NTHD4401P
NTHD4401PT1
NTHD4401PT1G
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74055
Abstract: transistor 74055 Si5441DC Si5441DC-T1 Si5441DC-T1-E3
Text: Specification Comparison Vishay Siliconix Si5441BDC vs. Si5441DC Description: P-Channel, 2.5 V G-S MOSFET Package: 1206-8 ChipFET Pin Out: Identical Part Number Replacements: Si5441BDC-T1-E3 Replaces Si5441DC-T1-E3 Si5441BDC-T1 Replaces Si5441DC-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
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Si5441BDC
Si5441DC
Si5441BDC-T1-E3
Si5441DC-T1-E3
Si5441BDC-T1
Si5441DC-T1
09-Nov-06
74055
transistor 74055
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SI5445DC-T1
Abstract: 1206 8 ChipFET Si5445BDC Si5445DC
Text: Specification Comparison Vishay Siliconix Si5445BDC vs. Si5445DC Description: P-Channel, 1.8 V G-S MOSFET Package: 1206-8 ChipFET Pin Out: Identical Part Number Replacements: Si5445BDC-T1-E3 Replaces Si5445DC-T1-E3 Si5445BDC-T1 Replaces Si5445DC-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
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Si5445BDC
Si5445DC
Si5445BDC-T1-E3
Si5445DC-T1-E3
Si5445BDC-T1
Si5445DC-T1
09-Nov-06
1206 8 ChipFET
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60175
Abstract: SI5944DU
Text: Si5944DU New Product Vishay Siliconix Dual N-Channel 40-V D-S MOSFET PRODUCT SUMMARY VDS (V) 40 FEATURES rDS(on) (W) ID (A) 0.112 at VGS = 10 V 6a 0.171 at VGS = 4.5 V 4.9 Qg (Typ) 2 2 nC 2.2 PowerPAKr ChipFETr Dual D TrenchFETr Power MOSFET D New Thermally Enhanced PowerPAKr
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Si5944DU
Si5944DU-T1
08-Apr-05
60175
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65a3
Abstract: NTHS5441 NTHS5441T1 NTHS5441T1G
Text: NTHS5441 Power MOSFET −20 V, −5.3 A, P−Channel ChipFET] Features • • • • • Low RDS on Higher Efficiency Extending Battery Life Logic Level Gate Drive Miniature ChipFET Surface Mount Package Pb−Free Package is Available http://onsemi.com
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NTHS5441
NTHS5441T1/D
65a3
NTHS5441
NTHS5441T1
NTHS5441T1G
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PowerPAK ChipFET Single
Abstract: No abstract text available
Text: Si5484DU Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.016 at VGS = 4.5 V 12 VDS (V) 20 0.021 at VGS = 2.5 V • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK® ChipFET® Package
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Si5484DU
Si5484DU-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
PowerPAK ChipFET Single
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Si5485DU
Abstract: Si5485DU-T1-E3
Text: New Product Si5485DU Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.025 at VGS = - 4.5 V - 12a 0.042 at VGS = - 2.5 V a - 12 • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK® ChipFET® Package
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Si5485DU
Si548ed
08-Apr-05
Si5485DU-T1-E3
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d8-aj
Abstract: Si5410DU
Text: New Product Si5410DU Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 40 0.018 at VGS = 10 V 12 0.021 at VGS = 4.5 V 12 Qg (Typ.) 10 nC PowerPAK ChipFET Single 1 2 Marking Code D 3 D D G D 7 Lot Traceability
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Si5410DU
18-Jul-08
d8-aj
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Si5402BDC
Abstract: No abstract text available
Text: Si5402BDC New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.035 @ VGS = 10 V 6.7 0.042 @ VGS = 4.5 V 6.1 D 1206-8 ChipFETr 1 D D D D D D G G S Marking Code AD XXX Lot Traceability
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Si5402BDC
Si5402BDC-T1--E3
18-Jul-08
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