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Infineon Technologies AG SPD28N05L SIPMOS POWER TRANSISTOR Power Field-Effect Transistor, 28A I(D), 55V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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SPD28N05L Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SPD28N05L		Infineon Technologies	SIPMOS PowerTransistor		Original	PDF
SPD28N05L		Siemens			Original	PDF
SPD28N05L		Siemens	SIPMOS Power Transistor		Original	PDF
SPD28N05L		Toshiba	Power MOSFETs Cross Reference Guide		Original	PDF

SPD28N05L Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
P-TO252 Abstract: SPD28N05L SPU28N05L v8030 Text: SPD28N05L SPU28N05L Preliminary data SIPMOS Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv/dt rated Pin 1 • 175°C operating temperature G Pin 2 Pin 3 D S Type VDS ID RDS on Package Ordering Code SPD28N05L	Original	SPD28N05L SPU28N05L P-TO252 Q67000-. P-TO251 13/Nov/1997 P-TO252 SPD28N05L SPU28N05L v8030	PDF
P-TO252 Abstract: SPD28N05L SPU28N05L Text: SPD28N05L SPU28N05L SIPMOS Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv /dt rated Pin 1 • 175°C operating temperature G Pin 2 Pin 3 D S Type VDS ID RDS on Package Ordering Code SPD28N05L 55 V 28 A 0.05 Ω	Original	SPD28N05L SPU28N05L P-TO252 Q67040 S4122 P-TO251 S4114 P-TO252 SPD28N05L SPU28N05L	PDF
fqp60n06 Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640 Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier	Original	STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640	PDF
28N05L Abstract: SPD28N05L 28n05 10DC10 TRANSISTOR TYPE 0235 P-TO252 Q67040-S4114-A2 SPU28N05L Text: SPD 28N05L SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS • Drain-Source on-state resistance RDS on 0.026 Ω Continuous drain current ID Enhancement mode • Avalanche rated 55 V 28 A • Logic Level • dv/dt rated	Original	28N05L SPD28N05L P-TO252 Q67040-S4122 P-TO251 Q67040-S4114-A2 SPU28N05L 28N05L SPD28N05L 28n05 10DC10 TRANSISTOR TYPE 0235 P-TO252 Q67040-S4114-A2 SPU28N05L	PDF
YTA630 Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620 Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509	Original	2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620	PDF
TLE5205 cross Abstract: tle6205 c167 ecu ECU PWM Throttle Position Sensor TLE6209 Electronic accelerator pedal automotive ecu circuit TLE5206 Different types of PWM ICs Text: System Engineering Automotive Application Note Throttle Control with Smart Power Bridges Microcontrollers of the C500 and the C16x-families. and This application note shows different solutions for electronic throttle control with components of Infineon Technologies.	Original	C16x-families. TLE5205 cross tle6205 c167 ecu ECU PWM Throttle Position Sensor TLE6209 Electronic accelerator pedal automotive ecu circuit TLE5206 Different types of PWM ICs	PDF
28N05L Abstract: 28n05 a2460 Text: SPD 28N05L SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS • Drain-Source on-state resistance RDS on 0.026 Ω Continuous drain current ID Enhancement mode • Avalanche rated 55 V 28 A • Logic Level • dv/dt rated	Original	28N05L SPD28N05L SPU28N05L P-TO252 P-TO251 Q67040-S4114-A2 Q67040-S4122-A2 SPD28N05L 28N05L 28n05 a2460	PDF
BUZ MOSFET Abstract: mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615n60 BUZ 840 SGU06N60 BUP 307D Text: s Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs tp :/ se /ww m w ic .s on ie du me ct ns or .d / e/ ht Product Information 04. 98 Fast IGBTs S-FET SO-8 D-PAK I-PAK MOS-Transistors in alphanumeric order VDS [V] R DSon [⏲] VGS th [V] I D [A] Package	Original	615NV OT-223 20iemens B152-H6493-G5-X-7600 BUZ MOSFET mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615n60 BUZ 840 SGU06N60 BUP 307D	PDF
fqp60n06 Abstract: SSH6N80 spb32N03l SMP60N03-10L SSP80N06A IRF540 application rfp60n06 fsd9933a 2SK790 IRFZ30 Text: 电子元器件系列 wwww.rf-china.com RF-Micom co.,Ltd EMail:[email protected] Sale Phone:86-592-5713956 MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL	Original	STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 SSH6N80 spb32N03l SMP60N03-10L SSP80N06A IRF540 application rfp60n06 fsd9933a 2SK790 IRFZ30	PDF
004II Abstract: No abstract text available Text: SIEMENS SPD28N05L SPU28N05L SIPMOS Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv/di rated Pin 1 • 175°C operating temperature G Pin 2 Pin 3 D S Type V\|ds ¡0 R DS on Package Ordering Code SPD28N05L 55 V	OCR Scan	SPD28N05L SPU28N05L P-T0252 P-T0251 Q67040 S4122 S4114 004II	PDF
28N05L Abstract: No abstract text available Text: Infineon h te c imPr° n ol o g i Ive<& SPD 28N05L Hosion “ SIPMOS PowerTransistor Features Product Summary • N channel Drain source voltage '/DS Drain-Source on-state resistance f l DS on) 0.026 Si A 28 t> • Enhancement mode Continuous drain current	OCR Scan	28N05L SPD28N05L SPU28N05L Q67040-S4122 P-T0251 P-T0252 Q67040-S4114-A2 S35bG5 Q133777 SQT-89 28N05L	PDF
BUZ MOSFET Abstract: mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S Text: SIEMENS Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs U ♦ BS 107 200 26.00 0.8. 2.0 0.13 TO-92 BSS 192 -240 20.00 -2.0. .-0.8 BS 170 60 5.00 0.8. 2.0 0.30 TO-92 BSS 229 250 100.00 -1.8. .-0.7 0.07 TO-92 BSO 307N 30 0.075 1.2. 2.0 4.2 SO-8	OCR Scan	615NV BSP318S BUZ MOSFET mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S	PDF