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    SPU28N05L Search Results

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    SPU28N05L Price and Stock

    Siemens SPU28N05L

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components SPU28N05L 1,200
    • 1 $4
    • 10 $4
    • 100 $4
    • 1000 $1.5
    • 10000 $1.5
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    SPU28N05L Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SPU28N05L Infineon Technologies SIPMOS Power-Transistor Original PDF
    SPU28N05L Siemens Original PDF
    SPU28N05L Siemens SIPMOS Power Transistor Original PDF
    SPU28N05L Toshiba Power MOSFETs Cross Reference Guide Original PDF

    SPU28N05L Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    P-TO252

    Abstract: SPD28N05L SPU28N05L v8030
    Text: SPD28N05L SPU28N05L Preliminary data SIPMOS Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv/dt rated Pin 1 • 175°C operating temperature G Pin 2 Pin 3 D S Type VDS ID RDS on Package Ordering Code SPD28N05L


    Original
    SPD28N05L SPU28N05L P-TO252 Q67000-. P-TO251 13/Nov/1997 P-TO252 SPD28N05L SPU28N05L v8030 PDF

    P-TO252

    Abstract: SPD28N05L SPU28N05L
    Text: SPD28N05L SPU28N05L SIPMOS Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv /dt rated Pin 1 • 175°C operating temperature G Pin 2 Pin 3 D S Type VDS ID RDS on Package Ordering Code SPD28N05L 55 V 28 A 0.05 Ω


    Original
    SPD28N05L SPU28N05L P-TO252 Q67040 S4122 P-TO251 S4114 P-TO252 SPD28N05L SPU28N05L PDF

    28N05L

    Abstract: SPD28N05L 28n05 10DC10 TRANSISTOR TYPE 0235 P-TO252 Q67040-S4114-A2 SPU28N05L
    Text: SPD 28N05L SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS • Drain-Source on-state resistance RDS on 0.026 Ω Continuous drain current ID Enhancement mode • Avalanche rated 55 V 28 A • Logic Level • dv/dt rated


    Original
    28N05L SPD28N05L P-TO252 Q67040-S4122 P-TO251 Q67040-S4114-A2 SPU28N05L 28N05L SPD28N05L 28n05 10DC10 TRANSISTOR TYPE 0235 P-TO252 Q67040-S4114-A2 SPU28N05L PDF

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original
    2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620 PDF

    28N05L

    Abstract: 28n05 a2460
    Text: SPD 28N05L SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS • Drain-Source on-state resistance RDS on 0.026 Ω Continuous drain current ID Enhancement mode • Avalanche rated 55 V 28 A • Logic Level • dv/dt rated


    Original
    28N05L SPD28N05L SPU28N05L P-TO252 P-TO251 Q67040-S4114-A2 Q67040-S4122-A2 SPD28N05L 28N05L 28n05 a2460 PDF

    BUZ MOSFET

    Abstract: mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615n60 BUZ 840 SGU06N60 BUP 307D
    Text: s Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs tp :/ se /ww m w ic .s on ie du me ct ns or .d / e/ ht Product Information 04. 98 Fast IGBTs S-FET SO-8 D-PAK I-PAK MOS-Transistors in alphanumeric order VDS [V] R DSon [⏲] VGS th [V] I D [A] Package


    Original
    615NV OT-223 20iemens B152-H6493-G5-X-7600 BUZ MOSFET mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615n60 BUZ 840 SGU06N60 BUP 307D PDF

    004II

    Abstract: No abstract text available
    Text: SIEMENS SPD28N05L SPU28N05L SIPMOS Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv/di rated Pin 1 • 175°C operating temperature G Pin 2 Pin 3 D S Type V|ds ¡0 R DS on Package Ordering Code SPD28N05L 55 V


    OCR Scan
    SPD28N05L SPU28N05L P-T0252 P-T0251 Q67040 S4122 S4114 004II PDF

    28N05L

    Abstract: No abstract text available
    Text: Infineon h te c imPr° n ol o g i Ive<& SPD 28N05L Hosion “ SIPMOS PowerTransistor Features Product Summary • N channel Drain source voltage '/DS Drain-Source on-state resistance f l DS on) 0.026 Si A 28 t> • Enhancement mode Continuous drain current


    OCR Scan
    28N05L SPD28N05L SPU28N05L Q67040-S4122 P-T0251 P-T0252 Q67040-S4114-A2 S35bG5 Q133777 SQT-89 28N05L PDF

    BUZ MOSFET

    Abstract: mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S
    Text: SIEMENS Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs U ♦ BS 107 200 26.00 0.8. 2.0 0.13 TO-92 BSS 192 -240 20.00 -2.0. .-0.8 BS 170 60 5.00 0.8. 2.0 0.30 TO-92 BSS 229 250 100.00 -1.8. .-0.7 0.07 TO-92 BSO 307N 30 0.075 1.2. 2.0 4.2 SO-8


    OCR Scan
    615NV BSP318S BUZ MOSFET mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S PDF