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    Vishay Siliconix SI4010DY-T1-GE3

    MOSFET N-CHANNEL 30V 31.3A 8SO
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    SI4010DY Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI4010DY-T1-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CHANNEL 30V 31.3A 8SO Original PDF

    SI4010DY Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: Si4010DY www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a 0.0034 at VGS = 10 V 31.3 0.0044 at VGS = 4.5 V 27.5 • TrenchFET Power MOSFET Qg (Typ.) • 100 % Rg and UIS Tested 22.5 nC


    Original     		Si4010DY Si4010DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4010DY_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		Si4010DY AN609, 5567m 8017u 2972m 7616m 9574m 6179m 8031m 10-Dec-13 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si4010DY www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 °C


    Original     		Si4010DY 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: V i s h ay I n t e r t e c h n o l o g y, I n c . POWER MOSFETs MOSFETs – Ultra-Low RDS on with Next Generation Technology TrenchFET Gen IV New Breakthrough Technology Lowers On-Resistance Down to Just 0.00135 Ω at VGS = 4.5 V Key Benefits • Next-generation technology optimizes several key specifications:


    Original     		SiZ916DT SiZ340DT SiZ914DT VMN-PT0306-1402 PDF

    N-Channel MOSFETs

    Abstract: No abstract text available
    Text: Vishay Intertechnology, Inc. LOW AND MEDIUM VOLTAGE N-CHANNEL MOSFET s TrenchFET GEN IV High-Performance MOSFETs from 30 V to 60 V ThunderFET® High-Performance MOSFETs from 80 V to 200 V PowerPAK® SC-70 PowerPAK SC-75 High-Performance MOSFETs from 60 V to 150 V in


    Original     		SC-70 SC-75 1212-8S VMN-MS6926-1406 N-Channel MOSFETs PDF