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    mosfet 4468

    Abstract: C 6090 transistor c 6090 AN609
    Text: Si5477DU_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si5477DU AN609 20-Jun-07 mosfet 4468 C 6090 transistor c 6090

    Si5477DU

    Abstract: No abstract text available
    Text: Si5477DU New Product Vishay Siliconix P-Channel 8-V D-S MOSFET PRODUCT SUMMARY VDS (V) –8 FEATURES rDS(on) (W) ID (A) 0.031 @ VGS = –4.5 V –16a 0.043 @ VGS = –2.5 V –16a 0.059 @ VGS = –1.8 V –14.2 Qg (Typ) D TrenchFETr Power MOSFET D RoHS Compliant


    Original     		PDF Si5477DU Si5477DU-T1--E3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si5477DU Vishay Siliconix P-Channel 8-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si5477DU 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si5477DU New Product Vishay Siliconix P-Channel 8-V D-S MOSFET PRODUCT SUMMARY VDS (V) –8 FEATURES rDS(on) (W) ID (A) 0.031 @ VGS = –4.5 V –16a 0.043 @ VGS = –2.5 V –16a 0.059 @ VGS = –1.8 V –14.2 Qg (Typ) D TrenchFETr Power MOSFET D RoHS Compliant


    Original     		PDF Si5477DU Si5477DU-T1--E3 08-Apr-05

    si5477

    Abstract: S341R
    Text: Si5477DU New Product Vishay Siliconix P-Channel 8-V D-S MOSFET PRODUCT SUMMARY VDS (V) –8 FEATURES rDS(on) (W) ID (A) 0.031 @ VGS = –4.5 V –16a 0.043 @ VGS = –2.5 V –16a 0.059 @ VGS = –1.8 V –14.2 Qg (Typ) D TrenchFETr Power MOSFET D RoHS Compliant


    Original     		PDF Si5477DU Si5477DU-T1--E3 51341--Rev. 25-Jul-05 si5477 S341R

    GS 069

    Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
    Text: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no


    Original     		PDF Si9165 Si9169 600-mA TSSOP-20 MSOP-10 SiP1759 GS 069 Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8

    si5480

    Abstract: SiA913DJ-T1-GE3 SIA513DJ-T1-E3 SI6404DQ-T1 SIA411DJ-T1-E3 SIB414DK-T1-E3 SI6913DQ-T1-E3 SIA513DJ-T1-GE3 SI6925ADQ-T1-E3 SI6981DQ-T1-GE3
    Text: Si6463BDQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.015 at VGS = - 4.5 V - 7.4 - 20 0.020 at VGS = - 2.5 V - 6.3 0.027 at VGS = - 1.8 V - 5.5 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT


    Original     		PDF Si6463BDQ Si6459BDQ-T1-GE3 SI5944DU-T1-E3 SI5944DU-T1-GE3 SI5945DU-T1-E3 SI5945DU-T1-GE3 SI5947DU-T1-E3 SI5947DU-T1-GE3 PPAKSC75 si5480 SiA913DJ-T1-GE3 SIA513DJ-T1-E3 SI6404DQ-T1 SIA411DJ-T1-E3 SIB414DK-T1-E3 SI6913DQ-T1-E3 SIA513DJ-T1-GE3 SI6925ADQ-T1-E3 SI6981DQ-T1-GE3