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    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si7386ADP Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original     		Si7386ADP 18-Jul-08 PDF

    Si7386ADP

    Abstract: No abstract text available
    Text: SPICE Device Model Si7386ADP Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original     		Si7386ADP S-80249-Rev. 01-Sep-08 S-82049-Rev. PDF

    2576-5

    Abstract: 4139 temperature AN609
    Text: Si7386ADP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,


    Original     		Si7386ADP AN609, 30-Jul-08 2576-5 4139 temperature AN609 PDF