74229
Abstract: Si7411DN Si7401DN Si7401DN-T1 Si7401DN-T1-E3 Si7411DN-T1-E3
Text: Specification Comparison Vishay Siliconix Si7411DN vs. Si7401DN Description: Package: Pin Out: P-Channel, 20 V D-S MOSFET PowerPAK 1212-8 Identical Part Number Replacements Si7411DN-T1-E3 Replaces Si7401DN-T1-E3 Si7411DN-T1-E3 Replaces Si7401DN-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
|
Original
|
Si7411DN
Si7401DN
Si7411DN-T1-E3
Si7401DN-T1-E3
Si7401DN-T1
06-Nov-06
74229
|
PDF
|
Si7401DN
Abstract: Si7401DN-T1
Text: Si7401DN Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) –20 rDS(on) (Ω) ID (A) 0.021 at VGS = – 4.5 V – 11 0.028 at VGS = – 2.5 V – 9.8 0.034 at VGS = – 1.8 V – 8.9 • TrenchFET Power MOSFETS: 1.8-V Rated • New PowerPAK® Package
|
Original
|
Si7401DN
07-mm
Si7401DN-T1
18-Jul-08
|
PDF
|
Si7401DN
Abstract: Si7401DN-T1
Text: Si7401DN Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) –20 rDS(on) (Ω) ID (A) 0.021 at VGS = – 4.5 V – 11 0.028 at VGS = – 2.5 V – 9.8 0.034 at VGS = – 1.8 V – 8.9 • TrenchFET Power MOSFETS: 1.8-V Rated • New PowerPAK® Package
|
Original
|
Si7401DN
07-mm
Si7401DN-T1
08-Apr-05
|
PDF
|
S0331
Abstract: No abstract text available
Text: Si7401DN Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (W) ID (A) 0.021 @ VGS = - 4.5 V - 11 0.028 @ VGS = - 2.5 V - 9.8 0.034 @ VGS = - 1.8 V - 8.9 D TrenchFETr Power MOSFETS: 1.8-V Rated D New PowerPAKr Package
|
Original
|
Si7401DN
07-mm
Si7401DN-T1
S-03311--Rev.
26-Mar-01
S0331
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Si7401DN Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) –20 rDS(on) (Ω) ID (A) 0.021 @ VGS = –4.5 V –11 0.028 @ VGS = –2.5 V –9.8 0.034 @ VGS = –1.8 V –8.9 • TrenchFET Power MOSFETS: 1.8-V Rated • New PowerPAK® Package
|
Original
|
Si7401DN
07-mm
Si7401DN-T1
08-Apr-05
|
PDF
|
74284
Abstract: MAR 527 73834 AN609 Si7401DN
Text: Si7401DN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
|
Original
|
Si7401DN
AN609
03-Mar-06
74284
MAR 527
73834
|
PDF
|
p-channel mosfet
Abstract: Si7401DN
Text: SPICE Device Model Si7401DN Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
|
Original
|
Si7401DN
31-May-01
p-channel mosfet
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Si7401DN Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) –20 rDS(on) (Ω) ID (A) 0.021 @ VGS = –4.5 V –11 0.028 @ VGS = –2.5 V –9.8 0.034 @ VGS = –1.8 V –8.9 • TrenchFET Power MOSFETS: 1.8-V Rated • New PowerPAK® Package
|
Original
|
Si7401DN
07-mm
Si7401DN-T1
S-51210
27-Jun-05
|
PDF
|
s0331
Abstract: Si7401DN
Text: Si7401DN New Product Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (A) 0.021 @ VGS = –4.5 V –11 0.028 @ VGS = –2.5 V –9.8 0.034 @ VGS = –1.8 V –8.9 D TrenchFETr Power MOSFETS: 1.8-V Rated D New PowerPAKt Package
|
Original
|
Si7401DN
07-mm
S-03311--Rev.
26-Mar-01
s0331
|
PDF
|
Untitled
Abstract: No abstract text available
Text: New Product Si7613DN Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e,f 0.0087 at VGS = - 10 V - 35 0.014 at VGS = - 4.5V - 35 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
|
Original
|
Si7613DN
2002/95/EC
Si7613DN-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
|
s8058
Abstract: No abstract text available
Text: Si7120DN Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 ID (A) 0.019 at VGS = 10 V 10 0.028 at VGS = 4.5 V 8.2 • • • • • Halogen-free Option Available TrenchFET Power MOSFET RoHS COMPLIANT New Low Thermal Resistance
|
Original
|
Si7120DN
Si7120DN-T1-E3
Si7120DN-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
s8058
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SQS464EEN www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • Typical ESD Protection 800 V • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd
|
Original
|
SQS464EEN
AEC-Q101
2002/95/EC
SQS464EEN-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
|
SQS404EN-T1-GE3
Abstract: marking D3 TSOP-6 PPAK1212
Text: SQS404EN www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested
|
Original
|
SQS404EN
AEC-Q101
2002/95/EC
SQS404EN-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
SQS404EN-T1-GE3
marking D3 TSOP-6
PPAK1212
|
PDF
|
MAR 826
Abstract: No abstract text available
Text: SQ7415AEN www.vishay.com Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen free According to IEC61249-2-21 Definition • TrenchFET Power MOSFET • PowerPAK® Package - Low Thermal Resistance, RthJC
|
Original
|
SQ7415AEN
IEC61249-2-21
AEC-Q101
2002/95/EC
SQ7415AEN-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
MAR 826
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: SQS482EN www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested 30 RDS(on) () at VGS = 10 V 0.0085 RDS(on) () at VGS = 4.5 V
|
Original
|
SQS482EN
AEC-Q101
SQS482EN-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SiS434DN Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0076 at VGS = 10 V 35 0.0092 at VGS = 4.5 V 35 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested
|
Original
|
SiS434DN
2002/95/EC
SiS434DN-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SQ7415EN www.vishay.com Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET • PowerPAK® Package - Low Thermal Resistance, RthJC - Low 1.07 mm Profile • Fast Switching • AEC-Q101 Qualified
|
Original
|
SQ7415EN
AEC-Q101
2002/95/EC
SQ7415EN-T1-E3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
|
TSOP8
Abstract: si7401
Text: Si7820DN Vishay Siliconix N-Channel 200 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 RDS(on) () ID (A) 0.240 at VGS = 10 V 2.6 0.250 at VGS = 6 V 2.5 Qg (Typ.) 12.1 PowerPAK 1212-8 APPLICATIONS S 3.30 mm • Primary Side Switch - Telecom Power Supplies
|
Original
|
Si7820DN
2002/95/EC
Si7820DN-T1-E3
Si7820DN-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
TSOP8
si7401
|
PDF
|
si7415dn-t1-ge3
Abstract: No abstract text available
Text: Si7415DN Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 60 ID (A) 0.065 at VGS = - 10 V - 5.7 0.110 at VGS = - 4.5 V - 4.4 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • Fast Switching
|
Original
|
Si7415DN
Si7415DN-T1-E3
Si7415DN-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Si7922DN Vishay Siliconix Dual N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.195 at VGS = 10 V 2.5 0.230 at VGS = 6 V 2.3 • Halogen-free Option Available • TrenchFET Power MOSFET • New Low Thermal Resistance PowerPAK®
|
Original
|
Si7922DN
Si7922DN-T1-E3
Si7922DN-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
|
si7615
Abstract: SI7615ADN SI7615A
Text: New Product Si7615ADN Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () Max. ID (A) 0.0044 at VGS = - 10 V - 35a 0.0060 at VGS = - 4.5 V - 35a 0.0098 at VGS = - 2.5 V a Qg (Typ.) 59 nC - 35 APPLICATIONS PowerPAK 1212-8
|
Original
|
Si7615ADN
Si7615ADN-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
si7615
SI7615A
|
PDF
|
SiSA18DN
Abstract: No abstract text available
Text: New Product SiSA18DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)f 0.0075 at VGS = 10 V 38.3 0.0120 at VGS = 4.5 V 30.2 • TrenchFET Gen IV Power MOSFET • 100 % Rg and UIS Tested • Material categorization:
|
Original
|
SiSA18DN
SiSA18DN-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Si7107DN Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.0108 at VGS = - 4.5 V - 15.3 0.015 at VGS = - 2.5 V - 13.0 0.020 at VGS = - 1.8 V - 11.2 PowerPAK 1212-8 • Halogen-free According to IEC 61249-2-21
|
Original
|
Si7107DN
2002/95/EC
Si7107DN-T1-E3
Si7107DN-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SiS407ADN www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) MAX. ID (A) f, g 0.009 at VGS = -4.5 V -18 0.0122 at VGS = -2.5 V -18 0.0190 at VGS = -1.8 V -18 VDS (V) -20 • TrenchFET power MOSFET Qg (TYP.)
|
Original
|
SiS407ADN
SiS407ADN-T1-GE3electronic
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
